High performance solution-crystallized thin-film transistors based on V-shaped thieno[3,2-f:4,5-f′]bis[1]benzothiophene semiconductors
Mitsui, Chikahiko; Tsuyama, Hiroaki; Shikata, Ryoji; Murata, Yoshinori; Kuniyasu, Hiroyuki; Yamagishi, Masakazu; Ishii, Hiroyuki; Yamamoto, Akito; Hirose, Yuri; Yano, Masafumi; Takehara, Tsunayoshi; Suzuki, Takeyuki; Sato, Hiroyasu; Yamano, Akihito; Fukuzaki, Eiji; Watanabe, Tetsuya; Usami, Yoshihisa; Takeya, Jun; Okamoto, Toshihiro; Journal of Materials Chemistry C 5 (2017) 1903–; doi:10.1039/C6TC04721A

data_7236449
_publ_section_title
;
 High performance solution-crystallized thin-film transistors based on
 V-shaped thieno[3,2-f:4,5-f&#x2032;]bis[1]benzothiophene semiconductors
;
_journal_issue                   8
_journal_name_full               'Journal of Materials Chemistry C'
_journal_page_first              1903
_journal_paper_doi               10.1039/C6TC04721A
_journal_volume                  5
_journal_year                    2017
_chemical_formula_moiety         'C36 H48 S3'
_chemical_formula_sum            'C36 H48 S3'
_chemical_formula_weight         576.96
_chemical_name_common            C10-TBBT-V
_space_group_IT_number           14
_space_group_name_Hall           '-P 2ybc'
_space_group_name_H-M_alt        'P 1 21/c 1'
_symmetry_cell_setting           monoclinic
_symmetry_Int_Tables_number      14
_symmetry_space_group_name_Hall  '-P 2ybc'
_symmetry_space_group_name_H-M   'P 1 21/c 1'
_atom_sites_solution_hydrogens   geom
_atom_sites_solution_primary     direct
_atom_sites_solution_secondary   difmap
_audit_update_record
;
2016-09-12 deposited with the CCDC.
2017-01-20 downloaded from the CCDC.
;
_cell_angle_alpha                90.0000
_cell_angle_beta                 92.129(8)
_cell_angle_gamma                90.0000
_cell_formula_units_Z            4
_cell_length_a                   7.6675(11)
_cell_length_b                   6.1022(8)
_cell_length_c                   69.473(10)
_cell_measurement_reflns_used    4637
_cell_measurement_temperature    293
_cell_measurement_theta_max      72.00
_cell_measurement_theta_min      2.50
_cell_volume                     3248.3(8)
_computing_cell_refinement       'CrystalClear-SM Expert 2.1 b29'
_computing_data_collection       'CrystalClear-SM Expert 2.1 b29 (Rigaku, 2013)'
_computing_data_reduction        'CrystalClear-SM Expert 2.1 b29'
_computing_molecular_graphics    'CrystalStructure 4.1'
_computing_publication_material  'CrystalStructure 4.1 (Rigaku, 2013)'
_computing_structure_refinement  'SHELXL97 (Sheldrick, 2008)'
_computing_structure_solution    'SIR2004 (Burla, et al., 2005)'
_diffrn_ambient_temperature      293
_diffrn_detector_area_resol_mean 10.000
_diffrn_measured_fraction_theta_full 0.988
_diffrn_measured_fraction_theta_max 0.988
_diffrn_measurement_device_type  'Rigaku R-AXIS RAPID II'
_diffrn_measurement_method       \w
_diffrn_radiation_type           'Cu K\a'
_diffrn_radiation_wavelength     1.54187
_diffrn_reflns_av_R_equivalents  0.1590
_diffrn_reflns_limit_h_max       7
_diffrn_reflns_limit_h_min       -7
_diffrn_reflns_limit_k_max       5
_diffrn_reflns_limit_k_min       -6
_diffrn_reflns_limit_l_max       68
_diffrn_reflns_limit_l_min       -68
_diffrn_reflns_number            21664
_diffrn_reflns_theta_full        50.61
_diffrn_reflns_theta_max         50.61
_diffrn_reflns_theta_min         1.27
_diffrn_standards_number         0
_exptl_absorpt_coefficient_mu    2.237
_exptl_absorpt_correction_T_max  0.989
_exptl_absorpt_correction_T_min  0.288
_exptl_absorpt_correction_type   multi-scan
_exptl_absorpt_process_details   'ABSCOR (Rigaku, 1995)'
_exptl_crystal_colour            colorless
_exptl_crystal_density_diffrn    1.180
_exptl_crystal_density_method    'not measured'
_exptl_crystal_description       plate
_exptl_crystal_F_000             1248.00
_exptl_crystal_size_max          0.551
_exptl_crystal_size_mid          0.132
_exptl_crystal_size_min          0.005
_refine_diff_density_max         0.43
_refine_diff_density_min         -0.48
_refine_ls_extinction_method     none
_refine_ls_goodness_of_fit_ref   0.986
_refine_ls_hydrogen_treatment    noref
_refine_ls_number_parameters     352
_refine_ls_number_reflns         3384
_refine_ls_number_restraints     0
_refine_ls_R_factor_gt           0.1019
_refine_ls_shift/su_max          0.000
_refine_ls_structure_factor_coef Fsqd
_refine_ls_weighting_details
'w = 1/[\s^2^(Fo^2^)+(0.1359P)^2^+0.0000P] where P=(Fo^2^+2Fc^2^)/3'
_refine_ls_weighting_scheme      calc
_refine_ls_wR_factor_ref         0.2571
_reflns_number_gt                1892
_reflns_number_total             3384
_reflns_threshold_expression     F^2^>2.0\s(F^2^)
_cod_data_source_file            c6tc04721a2.cif
_cod_data_source_block           TM071_2
_cod_database_code               7236449