One Silicon Atom of Bis(silylene) Functions as a Selective Lewis Base under Adduct Formation with a Lewis Acid
Roesky, Herbert W.; Ding, Yi; Nazish, Mohd; Ruth, Paul Niklas; Herbst-Irmer, Regine; Stalke, Dietmar; Dalton Transactions  (2023) –; doi:10.1039/D3DT00811H

data_7712773
_publ_section_title
;
 One Silicon Atom of Bis(silylene) Functions as a Selective Lewis Base
 under Adduct Formation with a Lewis Acid
;
_journal_name_full               'Dalton Transactions'
_journal_paper_doi               10.1039/D3DT00811H
_journal_year                    2023
_chemical_formula_moiety         'C47 H75 Cl2 Ga N4 Si2, 2(C7 H8)'
_chemical_formula_sum            'C61 H91 Cl2 Ga N4 Si2'
_chemical_formula_weight         1077.17
_space_group_crystal_system      triclinic
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_space_group_name_Hall           '-P 1'
_space_group_name_H-M_alt        'P -1'
_atom_sites_solution_hydrogens   geom
_audit_creation_method           SHELXL-2019/3
_audit_update_record
;
2023-03-14 deposited with the CCDC.	2023-04-14 downloaded from the CCDC.
;
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_computing_cell_refinement       'Bruker SAINT V8.40A'
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_diffrn_ambient_temperature      100(2)
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_diffrn_measured_fraction_theta_max 0.997
_diffrn_measurement_device_type  'Bruker Smart APEX II Quazar'
_diffrn_measurement_method       '\f and \w scans'
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_diffrn_reflns_theta_min         1.352
_diffrn_source                   'Incoatec Microsource'
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_exptl_absorpt_correction_type   multi-scan
_exptl_absorpt_process_details   SADABS-2016/2
_exptl_crystal_colour            colourless
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_refine_ls_shift/su_mean         0.000
_refine_ls_structure_factor_coef Fsqd
_refine_ls_weighting_details
'w=1/[\s^2^(Fo^2^)+(0.0415P)^2^+3.7988P] where P=(Fo^2^+2Fc^2^)/3'
_refine_ls_weighting_scheme      calc
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_reflns_threshold_expression     'I > 2\s(I)'
_cod_data_source_file            d3dt00811h2.cif
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_cod_database_code               7712773
_shelx_shelxl_version_number     2019/3
_shelx_estimated_absorpt_t_min   0.766
_shelx_estimated_absorpt_t_max   0.931
_shelx_res_checksum              76295