Sb and Se Substitution in CsBi4Te6: The Semiconductors CsM4Q6(M = Bi, Sb; Q = Te, Se), Cs2Bi10Q15, and CsBi5Q8
Chung, Duck Young; Uher, Ctirad; Kanatzidis, Mercouri G.; Chemistry of Materials 24 (2012) 1854–; doi:10.1021/cm300490v

data_4001648
_publ_section_title
;
 Sb and Se Substitution in CsBi4Te6: The Semiconductors CsM4Q6(M = Bi, Sb;
 Q = Te, Se), Cs2Bi10Q15, and CsBi5Q8
;
_journal_issue                   10
_journal_name_full               'Chemistry of Materials'
_journal_page_first              1854
_journal_paper_doi               10.1021/cm300490v
_journal_volume                  24
_journal_year                    2012
_chemical_formula_sum            'Bi4 Cs Se1.02 Te4.98'
_chemical_formula_weight         1684.76
_chemical_name_systematic
; 
 ? 
;
_space_group_IT_number           12
_symmetry_cell_setting           monoclinic
_symmetry_space_group_name_Hall  '-C 2y'
_symmetry_space_group_name_H-M   'C 1 2/m 1'
_atom_sites_solution_hydrogens   none
_atom_sites_solution_primary     direct
_atom_sites_solution_secondary   difmap
_audit_creation_method           SHELXL-97
_cell_angle_alpha                90.00
_cell_angle_beta                 101.268(2)
_cell_angle_gamma                90.00
_cell_formula_units_Z            8
_cell_length_a                   51.207(5)
_cell_length_b                   4.3452(5)
_cell_length_c                   14.3095(15)
_cell_measurement_temperature    293(2)
_cell_volume                     3122.6(6)
_computing_structure_refinement  'SHELXL-97 (Sheldrick, 2008)'
_computing_structure_solution    'SHELXS-97 (Sheldrick, 2008)'
_diffrn_ambient_temperature      293(2)
_diffrn_measured_fraction_theta_full 0.972
_diffrn_measured_fraction_theta_max 0.972
_diffrn_radiation_monochromator  graphite
_diffrn_radiation_source         'fine-focus sealed tube'
_diffrn_radiation_type           MoK\a
_diffrn_radiation_wavelength     0.71073
_diffrn_reflns_av_R_equivalents  0.0701
_diffrn_reflns_av_sigmaI/netI    0.0558
_diffrn_reflns_limit_h_max       70
_diffrn_reflns_limit_h_min       -70
_diffrn_reflns_limit_k_max       6
_diffrn_reflns_limit_k_min       -5
_diffrn_reflns_limit_l_max       18
_diffrn_reflns_limit_l_min       -19
_diffrn_reflns_number            15087
_diffrn_reflns_theta_full        29.50
_diffrn_reflns_theta_max         29.50
_diffrn_reflns_theta_min         3.25
_exptl_absorpt_coefficient_mu    58.704
_exptl_absorpt_correction_T_max  0.70
_exptl_absorpt_correction_T_min  0.19
_exptl_absorpt_correction_type   empirical
_exptl_crystal_colour            black
_exptl_crystal_density_diffrn    7.168
_exptl_crystal_density_method    'not measured'
_exptl_crystal_description       needle
_exptl_crystal_F_000             5445
_exptl_crystal_size_max          0.210
_exptl_crystal_size_mid          0.025
_exptl_crystal_size_min          0.006
_refine_diff_density_max         4.028
_refine_diff_density_min         -4.435
_refine_diff_density_rms         0.642
_refine_ls_extinction_method     none
_refine_ls_goodness_of_fit_ref   1.019
_refine_ls_hydrogen_treatment    none
_refine_ls_matrix_type           full
_refine_ls_number_parameters     145
_refine_ls_number_reflns         4727
_refine_ls_number_restraints     0
_refine_ls_restrained_S_all      1.019
_refine_ls_R_factor_all          0.0722
_refine_ls_R_factor_gt           0.0514
_refine_ls_shift/su_max          0.000
_refine_ls_shift/su_mean         0.000
_refine_ls_structure_factor_coef Fsqd
_refine_ls_weighting_details
'calc w=1/[\s^2^(Fo^2^)+(0.0811P)^2^+0.0000P] where P=(Fo^2^+2Fc^2^)/3'
_refine_ls_weighting_scheme      calc
_refine_ls_wR_factor_gt          0.1350
_refine_ls_wR_factor_ref         0.1442
_reflns_number_gt                3457
_reflns_number_total             4727
_reflns_threshold_expression     >2sigma(I)
_cod_data_source_file            cm300490v_si_001.cif
_cod_data_source_block           CsBi4Te496Se102
_cod_original_cell_volume        3122.5(6)
_cod_original_sg_symbol_H-M      C2/m
_cod_database_code               4001648