Sequential Bi-C bond activation reactions of BiEt3via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; E = Al, Ga, In}
C. Ganesamoorthy; D. Blaser; C. Wolper; S. Schulz; Chem.Commun. 50 (2014) 12382–; doi:10.1039/C4cc05028B

data_7115747
_publ_section_title
;
 Sequential Bi-C bond activation reactions of BiEt3via insertion reactions
 of RE {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; E = Al, Ga, In}
;
_journal_name_full               Chem.Commun.
_journal_page_first              12382
_journal_paper_doi               10.1039/C4cc05028B
_journal_volume                  50
_journal_year                    2014
_chemical_formula_moiety         'C33 H51 Ga N2'
_chemical_formula_sum            'C33 H51 Ga N2'
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_chemical_name_systematic
;
 ?
;
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; 
 Bruker D8 KAPPA series II with APEX II area detector system
;
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;
 Data collection strategy APEX 2/COSMO
;
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; 
 BRUKER AXS SMART APEX 2 Vers. 3.0-2009
 R.H. Blessing, Acta Cryst. (1995) A51 33-38 
;
_exptl_crystal_colour            colourless
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_exptl_crystal_size_min          0.380
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_refine_ls_structure_factor_coef Fsqd
_refine_ls_weighting_details
'w=1/[\s^2^(Fo^2^)+(0.0393P)^2^+0.6468P] where P=(Fo^2^+2Fc^2^)/3'
_refine_ls_weighting_scheme      calc
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_reflns_number_gt                9330
_reflns_number_total             9970
_reflns_threshold_expression     'I > 2\s(I)'
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_cod_data_source_block           cg_013m
_cod_original_cell_volume        1542.0(5)
_cod_database_code               7115747
_shelx_estimated_absorpt_t_min   0.678
_shelx_estimated_absorpt_t_max   0.723
_shelxl_version_number           2013-4
_shelx_res_checksum              11543