I want to know the answer to the following question:
What is quicker, a bipolar n-p-n transistor or a p-n-p transistor?
All the background I'm provided with is that "A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction.". Is that enough to answer the question?
Answer: no