Question: What is quicker, a bipolar n-p-n transistor or a p-n-p transistor?
Sentence: A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction.
Answer in sentence: no