From: bnittoor@magnus.acs.ohio-state.edu (Badriprasad S Nittoor)
Subject: Semiconductor Device Processing, Design or Characterization
Organization: The Ohio State University
Date: Mon, 14 Sep 1992 20:21:25 GMT

I am posting this for a friend, Please do not respond to this address.
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Dear Madam or Sir,

	I am a graduate student in the Department of Electrical Engineering at
the Louisiana State University, Baton Rouge, and will be graduating with an M.S.
degree in Electrical Engineering in October, 1992. My  area of specialization   
is in Solid State Electronics, and I am looking for a suitable opening in your
company. Please find enclosed a copy of my resume for your perusal.

	As you will see from my resume, I have considerable practical experience
in the field of device characterization and testing.  I also have a very good
knowledge of semiconductor processing techniques, which I acquired as a Research
Assistant in the Solid State Laboratory here.  Particularly, I have worked with
different oxidation systems, electron-beam and thermal evaporators, etching
systems, and am familiar with various lithographic techniques. My undergraduate
degree in Instrumentation Engineering has provided the necessary background and
exposure to process control automation. 

	It is my ambition to make a career for myself in your company in the
field of semiconductor processing, device characterization or design. With my
background, I am confident that I can meet the challenges the job has to offer.
I therefore request that I be considered for a suitable opening in your company.
A copy of my resume follows this letter. Please feel free to contact me over the
phone or through electronic-mail in case you have any queries. Thanking you in
advance for your consideration,

Sincerely,

R.P.Nandakumar

________________________________________________________________________________
	
			RAJENDRAM NANDAKUMAR

			3000, July St., #99,
                       Baton Rouge, LA 70808

           Tel.#:(504)-387 0553 (Res.)  (504)-388 5488 (Off.)
                   e-mail: rnanda@max.ee.lsu.edu


OBJECTIVE
	A challenging position in the area of semiconductor device processing,
 design, or characterization.


EDUCATION

  * M.S. in Electrical Engineering, Louisiana State University, Baton Rouge.
    Graduating in October, 1992.
    Area of Specialization: Solid state electronics.
    GPA: 3.75/4.00 (Major); 3.5/4.00 (Overall)

    Thesis: "Radiation damage studies on short channel MOSFETs using I-V
             measurements and hot electron injection".

    The research encompassed studying effects of ionizing radiation on the
  device parameters of MOSFETs with respect to the channel length, radiation
  dose, and gate oxide thickness.  Limitations to the "hot" electron injection
  method were revealed.


  Related Coursework:

  IC Engineering                          Advanced Lithography & Metrology
  Semiconductor Materials                 Physics of Device Electronics
  Semiconductor Devices: Field Effect     Semiconductor Device Characterization
  Physics of Small Geometry Devices       Optical Electronics


 *  M.Sc (Tech.) Instrumentation Engineering, Birla Institute of Technology and
    Science, Pilani, India, June, 1989.

EXPERIENCE

 *  Research Assistant, Department of Electrical & Computer Engineering, LSU,
  September, 1989 - May, 1992. As part of my assistantship duties, set up an
  experimental system for MOS device irradiation and characterization, under
  the Semiconductor Research Corporation grant.

 *  Graduate Trainee Engineer, Avery (India) Ltd., New Delhi, India, June,1989-
  December, 1989. Involved in the testing and development of electronic machine
  balancing and vibration monitoring instruments.

 *  Student Trainee, Associated Instruments Manufacturers (India) Ltd, New Delhi
 January, 1989 - June, 1989. Worked on troubleshooting and rectifying electronic
 equipment, including radio communication test sets, and  signal processors.

PUBLICATIONS

* "The effect of substrate resistivity on threshold voltage shifts due to
 radiation induced damage in IGFETs," IEE Proceedings-G on Circuits & Systems,
 vol.139, No.3, pp 400-404, June, 1992.

* "Reliability of gate dielectrics of MOSFETs exposed to synchrotron radiation",
 Nuclear Instruments and Methods in Physics Research, vol.A319, pp 346-349,
 North-Holland, Amsterdam, August, 1992.

* "Study of SEM irradiated damage to gate oxides of MOSFETs," to be published
 in the September, 1992, issue of the Japanese Journal of Applied Physics,Japan.

* "Damage to insulated gate FETs through electron-beam metrology and X-ray
 exposures," accepted for publication in International Journal of Electronics,
 U.K.

PROJECTS & PRESENTATIONS

* Process design of Bipolar Junction Transistor as part of the course IC 
  Engineering.
* Design of an MBE system as part of the course Semiconductor Materials.
* "Reliability of gate dielectrics of MOSFETs exposed to synchrotron radiation",
  presented at the Seventh International Conference on Synchrotron Radiation 
  Instrumentation, Baton Rouge, LA, October, 1991.

COMPUTER SKILLS

Languages: C, Assembly Language, PASCAL.
Packages: SUPREM IV, PSpice, Word 4.0, WordPerfect 5.1, SuperPaint, etc.
Environment: Encore Multimax, IBM 3090, IBM PS/2, Macintosh, IBM RS6000.
Operating Systems: UNIX 4.3 BSD and System V, DOS.

AWARDS & ACHIEVEMENTS

* Member of Eta Kappa Nu, the Electrical Engineering Honor Society.
* Member of IEEE.

REFERENCES

Available upon request.

-- 
_________________________________________________________________
Badriprasad S. Nittoor
bnittoor@magnus.acs.ohio-state.edu
(614) 262-4180 (Res)  (614) 292-7282 (Off)