From: pan@auvax1.adelphi.edu
Newsgroups: misc.jobs.resumes
Subject: <None>
Date: 7 Oct 92 14:48:41 GMT
Organization: Adelphi University, Garden City NY


Application Letter

Subject:To seek a position as a process engineer in semiconductor products,
	especially in deposition and characterization of thin films. 


To:		Whom It May Concern

From:		Pan Yaoling

RE.		Professional Experiences and Interests
	
Specified:	Semiconductor Devices and Materials

As a research partner, I participated in several research studies. The areas of
my research interests in the past years mainly focused on  semiconductor device
s and semiconductor materials, specializing in the preparation and
characterization of amorphous silicon and polysilicon films, microelectronic
processing technology such as the fabrication of dielectric thin films in VLSI,
eg. SiO2,  SiOxNy, and Silicide as well as SOI,etc., and semiconductor special
devices (semiconductor power device: VDMOS, Thyristor; and semiconductor sensor
: stress sensor and H+ sensitive device both based on SOS, Silicon On Sapphire.
). In addition, I am very  familiar with the various semiconductor film growth 
techniques such as PECVD, LPCVD and other physical deposition techniques such
as electron-beam evaporation, sputtering, as well as some advanced diagnostic
techniques for films, such as XPS, AES, RBS, IR, SIMS,SEM, RHEED, XRD, and Raman
etc. Also, I have completed some theoretical studies on semiconductor physics,
such as the effects of interface states between SiO2  and a-Si on the field-
effect conductance in a-Si:H, the mechanism of electrical conduction in 
polysilicon doped with oxygen, the effects of interfacial barrier on  carrier
injection of the polysilicon/silicon heterojunction, and device modeling for
short channel MOSFET.

My current interests center on the synthesis of semiconductor thin 
film materials, semiconductor interfaces, and superlattices.  In thin film 
growth, my interest concerns understanding the relationship between processes,
microstructure and properties of the film under a variety of  conditions of
deposition. In this way I want to explore the potential application of various 
semiconductor films to optoelectronic devices.Besides I am interested in
exploring new approch for the fabrication of semiconductor thin films suitble
to VLSI. In interfaces, I am interested in studying the properties of the
interaction of metal layers with silicon substrates to study silicide
formation, which could be applied in high-speed CMOS integrated circuits for
metallization. Also I have some interests in studying the interfacial 
properties of insulator layers deposited on semiconductor compound substrates
at low temperature, which is great of technological importantance for the 
fabrication of semiconductor compound devices. I have special interests in
semiconductor superlattices and heterostructure devices with GexSi1-x strained 
layers or GaAs and other compounds on silicon prepared by MBE, MOCVD, which
have led to promising applications in semiconductor quantum-well lasers, high 
speed optoelectronic devices, and dectectors.  I intend to study the
dependence of their properties on the layer thickness, composition, orientation
and disorder. Furthermore, I also have some interests in the other subjects of 
microelectronics such as microsensors, nanostructure fabrication, and modeling
of nanometer scale electronic devices.

			Following is my resume.

^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^
_____________________________________________________________________________

 
				 Pan Yaoling
				33 Roxbury Rd
			   Garden City, NY 11530
		 (516) 742-7439 (H)  (516) 877-4889 (O)
         	       E_mail pan@auvax1.adelphi.edu

Objective:	To seek a position as a process engineer in fabrication of 
		semiconductor thin films, installation and maintenance of CVD
		ficilities with my expertise and hand on experience in
		microelectronics 

Education and Degrees 

1990-1992	M.S Degree, Applied Physics, May.1992.
		Adelphi University, Garden City, NY
		GPA: Major 4.0/4.0, overall 3.8/4.0
1984-1987	M.S Degree, Solid State Electronics, 1987
		East China Normal University, Shanghai
		GPA: Major 4.0/4.0, overall 3.6/4.0
1978-1982	B.S Degree, Semiconductor Device Physics, 1982
		Shanghai University Of Science and Technology, Shanghai 
		GPA: Malor 3.8/4.0, overall 3.5/4.0

Research Experiences

1991-Present	Adelphi University, Physics Dept.,Garden City, NY
		Research Project:	
		Spatial Transportation Of Plasmas Generated in Semiconductor
		(GaAs) Surface by Optical Techniques 

1987-1990	Shanghai University Of Science and Technology (Branch),Shanghai
		Solid State Device Laboratory,
		Research Project:	
		Study On the Characteristics Of Silicon-On-Insulator Substrae
		(SOI) Formed By Silicon Epitaxy On Highly-Oxygen-Doped SIPOS

1985-1987	East China Normal University, Shanghai
		Device and Film Laboratory:
		Research Projects: 	
		(1) Design Of Chip-Layout and Process Technology for 800v/10A
 		VDMOS Power Semiconductor Device
		(2) Preparation and Characterization Of LPCVD SIPOS (Semi-
		Insulating Polysilicon Doped With Oxygen) film and 
		Its application In Semiconductor Devices

1982-1984	Shanghai University Of Science and Technology (Branch),Shanghai
		Solid State Device Laboratory;
		Research Projects:
		(1) Design of Chip-Layout and Process Technology for CMOS 8 bit
		A/D Convertor 
		(2) PECVD SiO2 and SixNy Thin Films for Semiconductor Devices
		and CMOS ICs

1981-1982	Internship,
		Shanghai Institute Of Metallurgy, Academic Sinica, Shanghai
		Department Of Semiconductor and Metal Physics;
		Research Project: 
		CVD Epitaxial Technology Of SOS (Silicon On Sapphire)

Teaching Experiences

1987-1990	Lecture, 
		Shanghai University of Science and Technology(Branch),Shanghai 
		Responsible for the Instruction In Semiconductor Device Physics
		and The Semiconductor Devices Processing Lab For Undergraduate
		Students

1984-1987	Teaching Assistant,
		East China Normal University, Shanghai
		Responsible For Instruction In Solid State Electronics Lab

Assistantships

1990-Present	Adelphi University, Physics Dept.,Garden City, NY
		Teaching Assistantship
		Responsible for  Recitation in College Physics and Instruction
		in Physics Lab for Undergraduate Students  
1991-Present	Adelphi University,Computer Center, Garden City, NY
		Computer Lab Assistantship
		Assisting In Supervising Daily Activities and Instruction in
		Computer Operation for Students and Faculty.

Achievements

The following achievements have been recognized by the authorities  concerned

	*"Design and Fabrication Of CMOS 8 bit A/D Convertor "
	*"The Application Of SIPOS Films in CMOS Integrated Circuits"
	*"Study on the Characteristics Of Silicon On Insulator Substrata(SOI)
	Formed by Silicon Epitaxy on Highly-Oxygen-Doped SIPOS"

Computers 

* Macintosh, VAX/VMS, MS-DOS 5.0
* Programming in BASIC,PASCAL,FORTRAN
* Word Processing WP 5.0 and  5.1 On IBM-PC, MS 5.0 On Mac.
* Cricket Graph 1.3.2 To Create Spreadsheets and Graphs

Related Skills

* Installation and Maintenance Of CVD Facilities ( Deposition System, 	Vacuum 
  System, Pipe System, Control System etc. )
* Familiar with Solid-State Electronic Device Processing Technology (Doping,
  Diffusion, High-Temperature Oxidation, Deposition Of 	Dielectric Films,
  Lithography, Plasma Etching, Ion Implantation, etc.)
* Familiar with Characterization Techniques for Semiconductor 	Devices and
  Materials such as Four-Point Prob, Hall-Effect, C-V, I-V, Ellipsometry, XPS,
  AES, RBS, IR, SIMS, SEM, RHEED, XRD, and Raman et.,
	
Publications 

Published

1)	"Electrical Properties Of LPCVD Polysilicon Doped With Oxygen"
	 Pan Yaoling, Wang Yunzhen, Wang Jishen
	 Journal Of Electronics, Vol.13, No.4, 1991
2) 	"Defects Of SIPOS Films Studied Through Electron Spin Resonance"
	 Wang Yunzhen, Pan Yaoling
	 The Proceedings Of '91 TFPA, International Conference On Thin Film 
	 Physics and Application, SPIE 1519, pp.860-864, 1991
3)*	"Crystallographic Study Of Semi-Insulating Polysilicon (SIPOS) Formed
	 By LPCVD"
	 Pan Yaoling, Wang Yunzhen, Wang Jishen
	 Research & Progress Of Solid State Electronics, Vol.10,No.4,1990 
4) 	"Study On The Technological Characteristics Of SIPOS Formed By LPCVD"
	 Pan Yaoling, Wang Yunzhen, Wang Jishen
	 Journal Of Semiconductor Technology, Vol.8,No.2,1990
5)*	"Raman Spectra Studies Of The Microstructure Of  Oxygen-Doped
	 Polysilicon."
	 Wang Yunzhen, Pan Yaoling
	 Chinese Journal Of Semiconductor, Vol.10,No.7,1989
6) 	"The Passivation Of Semi-Insulating Polysilicon Doped With Oxygens
	 In CMOS Integrated Circuits" 
	 Wang Yunzhen, Pan Yaoling, Song Fici
	 Journal Of Computer and Microelectronics No.6,1988
7)	"Study On The Stress Of SIPOS-Si Interface"
	 Wang Yunzhen, Pan Yaoling
	 Journal Of East China Normal University, 
	 Natural Science Edition,Vol.15, No 4,1987.
8)	"A Theoretical Model For The Electronic Conductance Of SIPOS Film"
	 Pan Yaoling
	 The Proceedings Of the 6th National Conference On Semiconductor 
	 Physics.  
	 Chinese Physics Society,1987.
9)	"A Study On The Characteristics Of Semi-Insulating Polysilicon 
	 (SIPOS) -  Si Heterojuction"
	 Wang Yunzhen, Pan Yaoling
	 The Proceedings Of the International Conference On  Semiconductor and
	 Integrated Circuit Technology,
	 World Scientific Publishing Co Pte Ltd, pp.9-494, 1986.
11)	"A New Way For Improving The Crystalline Quality Of  SOS Films"
	 Chen Qing-Gui, Pan Yaoling, Shi Rehua, et al
	 Journal Of Applied Science, Vol 3. No 3, 1985.
12)	"A New Integrated CMOS 8 bit A/D Convertor"
	 Pan Yaoling, Chen Leding
	 The Proceedings Of  3th  National  Conference On IC and Silicon  Material. 
	 Chinese  Electronic Society, 1983.
13)	"A New Model Of D/A Sampling Convertor"
	 Pan Yaoling, Chen Leding
	 As above.
 
* These two papers also are collected in " Abstracts Of American Physics "

To be Published

1) 	"The Study On Properties Of Optical Absorption In Polysilicon Doped 
	 With Oxygens"
	 Pan Yaoling, Wang Yunzhen
	 Accepted for publication in << Optical Engineering >>
2) 	"Study Of The Effect Of Interface States On The Field Effect 
	 Conductance Of Amorphous Silicon"
	 Pan Yaoling
	 To be submitted to << Applied Physics Letters>>

REFERENCES ARE AVAILABLE UPON REQUEST
Newsgroups: misc.jobs.resumes