Newsgroups: comp.lsi,comp.lsi.cad,comp.lsi.testing,sci.electronics
Subject: Re: Wanted: SPICE models for transistors/diodes
From: sldf3@pluto.ee.usu.edu (Weston R Beal)
Date: 2 Oct 92 11:41:06 MDT
Distribution: world
Organization: Utah State Univ. EE


Here are all the model libraries that are included with the
PD version of Pspice.  They should be broken into individual
files, and it isn't hard to see where the breaks should be.

I hope you have fun.
-- 

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%%          							    %%
%%  Weston Beal			:  I have a piece of hard rock      %%
%%  sldf3@sol.ee.usu.edu	:  candy, but it's not for eating.  %%
%%  sldf3@cc.usu.edu		:  It's for looking through.        %%
%%                                                                  %%
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**************** START OF LIBRARIES ************************

* Library of bipolar transistor model parameters
*
* This is a reduced version of MicroSim's bipolar transistor model library.
*   You are welcome to make as many copies of it as you find convenient.
*
* Release date: November 1988
*
* The parameters in this model library were derived from the data sheets for
* each part.  Each part was characterize using the Parts option.
* Devices can also be characterized without Parts as follows:
*
*	NE, NC		Normally set to 4
*	BF, ISE, IKF	These are adjusted to give the nominal beta vs.
*			collector current curve.  BF controls the mid-
*			range beta.  ISE/IS controls the low-current
*			roll-off.  IKF controls the high-current rolloff.
*	ISC		Set to ISE.
*	IS, RB, RE, RC	These are adjusted to give the nominal VBE vs.
*			IC and VCE vs. IC curves in saturation.  IS
*			controls the low-current value of VBE.  RB+RE
*			controls the rise of VBE with IC.  RE+RC controls
*			the rise of VCE with IC.  RC is normally set to 0.
*	VAF		Using the voltages specified on the data sheet
*			VAF is set to give the nominal output impedance
*			(RO on the .OP printout) on the data sheet.
*	CJC, CJE	Using the voltages specified on the data sheet
*			CJC and CJE are set to give the nominal input
*			and output capacitances (CPI and CMU on the .OP
*			printout; Cibo and Cobo on the data sheet).
*	TF		Using the voltages and currents specified on the
*			data sheet for FT, TF is adjusted to produce the
*			nominal value of FT on the .OP printout.
*	TR		Using the rise and fall time circuits on the
*			data sheet, TR (and if necessary TF) are adjusted
*			to give a transient analysis which shows the
*			nominal values of the turn-on delay, rise time,
*			storage time, and fall time.
*	KF, AF		These parameters are only set if the data sheet has
*			a spec for noise.  Then, AF is set to 1 and KF
*			is set to produce a total noise at the collector
*			which is greater than the generator noise at the
*			collector by the rated number of decibels.
*
*
.model Q2N2222A NPN(Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307
+		Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1
+		Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75
+		Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)
*		National	pid=19		case=TO18
*		88-09-07 bam	creation

.model Q2N2907A PNP(Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829
+		Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715
+		Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75
+		Tr=111.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
*		National	pid=63		case=TO18
*		88-09-09 bam	creation

.model Q2N3904	NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259
+		Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1
+		Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75
+		Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
*		National	pid=23		case=TO92
*		88-09-08 bam	creation

.model Q2N3906	PNP(Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0
+		Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p
+		Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n
+		Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10)
*		National	pid=66		case=TO92
*		88-09-09 bam	creation
* Sample library of diode model parameters
*
* This is a reduced version of MicroSim's diode model library.
*   You are welcome to make as many copies of it as you find convenient.
*
* Release date: November 1988
*
* The parameters in this model library were derived from the data sheets for
* each part.  Most parts were characterize using the Parts option.
* Devices can also be characterized without Parts as follows:
*	IS		nominal leakage current
*	RS		for zener diodes: nominal small-signal impedance
*			at specified operating current
*	IB		for zener diodes: set to nominal leakage current
*	IBV		for zener diodes: at specified operating current
*			IBV is adjusted to give the rated zener voltage
*
*
*** Zener Diodes ***
*
* "A" suffix zeners have the same parameters (e.g., 1N750A has the same
* parameters as 1N750)
*
.model D1N750	D(Is=1u Rs=10 Bv=4.24 Ibv=1u)

*** Voltage-variable capacitance diodes

* The parameters in this model library were derived from the data sheets for
* each part.  Each part was characterize using the Parts option.
*
.model MV2201   D(Is=1.365p Rs=1 Ikf=0 N=1 Xti=3 Eg=1.11 Cjo=14.93p M=.4261
+		Vj=.75 Fc=.5 Isr=16.02p Nr=2 Bv=25 Ibv=10u)
*		Motorola	pid=MV2201	case=182-03
*		88-09-22 bam	creation

*** Switching Diodes ***

.model D1N4148	D(Is=0.1p Rs=16 CJO=2p Tt=12n Bv=100 Ibv=0.1p)
*		85-??-??	Original library

.model MBD101   D(Is=192.1p Rs=.1 Ikf=0 N=1 Xti=3 Eg=1.11 Cjo=893.8f M=98.29m
+		Vj=.75 Fc=.5 Isr=16.91n Nr=2 Bv=5 Ibv=10u)
*		Motorola	pid=MBD101	case=182-03
*		88-09-22 bam	creation

* End of library file
* Library of junction field-effect transistor (JFET) model parameters

* This is a reduced version of MicroSim's JFET model library.
*   You are welcome to make as many copies of it as you find convenient.

* Release date: November 1988

* The parameters in this model library were derived from the data sheets for
* each part.  Each part was characterize using the Parts option.

.model J2N3819	NJF(Beta=1.304m Betatce=-.5 Rd=1 Rs=1 Lambda=2.25m Vto=-3
+		Vtotc=-2.5m Is=33.57f Isr=322.4f N=1 Nr=2 Xti=3 Alpha=311.7
+		Vk=243.6 Cgd=1.6p M=.3622 Pb=1 Fc=.5 Cgs=2.414p Kf=9.882E-18
+		Af=1)
*		National	pid=50		case=TO92
*		88-08-01 rmn	BVmin=25

.model J2N4393	NJF(Beta=9.109m Betatce=-.5 Rd=1 Rs=1 Lambda=6m Vto=-1.422
+		Vtotc=-2.5m Is=205.2f Isr=1.988p N=1 Nr=2 Xti=3 Alpha=20.98u
+		Vk=123.7 Cgd=4.57p M=.4069 Pb=1 Fc=.5 Cgs=4.06p Kf=123E-18
+		Af=1)
*		National	pid=51		case=TO18
*		88-07-13 bam	BVmin=40

*** end of library file
* Library of linear IC definitions

* This is a reduced version of MicroSim's linear subcircuit library.
*   You are welcome to make as many copies of it as you find convenient.
*
* Release date: November 1988
*
* The parameters in the opamp library were derived from the data sheets for
* each part.  The macromodel used is similar to the one described in:
*
*	Macromodeling of Integrated Circuit Operational Amplifiers
*	  by Graeme Boyle, Barry Cohn, Donald Pederson, and James Solomon
*	IEEE Journal of SoliE-State Circuits, Vol. SC-9, no. 6,	Dec. 1974
*
* Differences from the reference (above) occur in the output limiting stage
* which was modified to reduce internally generated currents associated with
* output voltage limiting, as well as short-circuit current limiting.
*
* The opamps are modelled at room temperature and do not track changes with
* temperature.  This library file contains models for nominal, not worst case,
* devices.
*
*-----------------------------------------------------------------------------
* connections:   non-inverting input
*                | inverting input
*                | | positive power supply
*                | | | negative power supply
*                | | | | output
*                | | | | |
.subckt LM324    1 2 3 4 5
*
  c1   11 12 2.887E-12
  c2    6  7 30.00E-12
  dc    5 53 dx
  de   54  5 dx
  dlp  90 91 dx
  dln  92 90 dx
  dp    4  3 dx
  egnd 99  0 poly(2) (3,0) (4,0) 0 .5 .5
  fb    7 99 poly(5) vb vc ve vlp vln 0 21.22E6 -20E6 20E6 20E6 -20E6
  ga    6  0 11 12 188.5E-6
  gcm   0  6 10 99 59.61E-9
  iee   3 10 dc 15.09E-6
  hlim 90  0 vlim 1K
  q1   11  2 13 qx
  q2   12  1 14 qx
  r2    6  9 100.0E3
  rc1   4 11 5.305E3
  rc2   4 12 5.305E3
  re1  13 10 1.845E3
  re2  14 10 1.845E3
  ree  10 99 13.25E6
  ro1   8  5 50
  ro2   7 99 25
  rp    3  4 9.082E3
  vb    9  0 dc 0
  vc    3 53 dc 1.500
  ve   54  4 dc 0
  vlim  7  8 dc 0
  vlp  91  0 dc 40
  vln   0 92 dc 40
.model dx D(Is=800.0E-18 Rs=1)
.model qx PNP(Is=800.0E-18 Bf=166.7)
.ends
*-----------------------------------------------------------------------------
* connections:   non-inverting input
*                | inverting input
*                | | positive power supply
*                | | | negative power supply
*                | | | | output
*                | | | | |
.subckt uA741    1 2 3 4 5
*
  c1   11 12 8.661E-12
  c2    6  7 30.00E-12
  dc    5 53 dx
  de   54  5 dx
  dlp  90 91 dx
  dln  92 90 dx
  dp    4  3 dx
  egnd 99  0 poly(2) (3,0) (4,0) 0 .5 .5
  fb    7 99 poly(5) vb vc ve vlp vln 0 10.61E6 -10E6 10E6 10E6 -10E6
  ga    6  0 11 12 188.5E-6
  gcm   0  6 10 99 5.961E-9
  iee  10  4 dc 15.16E-6
  hlim 90  0 vlim 1K
  q1   11  2 13 qx
  q2   12  1 14 qx
  r2    6  9 100.0E3
  rc1   3 11 5.305E3
  rc2   3 12 5.305E3
  re1  13 10 1.836E3
  re2  14 10 1.836E3
  ree  10 99 13.19E6
  ro1   8  5 50
  ro2   7 99 100
  rp    3  4 18.16E3
  vb    9  0 dc 0
  vc    3 53 dc 1
  ve   54  4 dc 1
  vlim  7  8 dc 0
  vlp  91  0 dc 40
  vln   0 92 dc 40
.model dx D(Is=800.0E-18 Rs=1)
.model qx NPN(Is=800.0E-18 Bf=93.75)
.ends
*-----------------------------------------------------------------------------

*** Voltage comparators

* The parameters in this comparator library were derived from data sheets for
* each parts.  The macromodel used was developed by MicroSim Corporation, and
* is produced by the "Parts" option to PSpice.
*
* Although we do not use it, another comparator macro model is described in:
*
*	An Integrated-Circuit Comparator Macromodel
*	  by Ian Getreu, Andreas Hadiwidjaja, and Johan Brinch
*	IEEE Journal of Solid-State Circuits, Vol. SC-11, no. 6, Dec. 1976
*
* This reference covers the considerations that go into duplicating the
* behavior of voltage comparators.
*
* The comparators are modelled at room temperature.  The macro model does not
* track changes with temperature.  This library file contains models for
* nominal, not worst case, devices.
*
*-----------------------------------------------------------------------------
* connections:   non-inverting input
*                | inverting input
*                | | positive power supply
*                | | | negative power supply
*                | | | | open collector output
*                | | | | | output ground
*                | | | | | |
.subckt LM111    1 2 3 4 5 6
*
  f1    9  3 v1 1
  iee   3  7 dc 100.0E-6
  vi1  21  1 dc .45
  vi2  22  2 dc .45
  q1    9 21  7 qin
  q2    8 22  7 qin
  q3    9  8  4 qmo
  q4    8  8  4 qmi
.model qin PNP(Is=800.0E-18 Bf=833.3)
.model qmi NPN(Is=800.0E-18 Bf=1002)
.model qmo NPN(Is=800.0E-18 Bf=1000 Cjc=1E-15 Tr=118.8E-9)
  e1   10  6  9  4  1
  v1   10 11 dc 0
  q5    5 11  6 qoc
.model qoc NPN(Is=800.0E-18 Bf=34.49E3 Cjc=1E-15 Tf=364.6E-12 Tr=79.34E-9)
  dp    4  3 dx
  rp    3  4 6.122E3
.model dx  D(Is=800.0E-18 Rs=1)
*
.ends
*
* End of library file
* Library of magnetic core model parameters

* This is a reduced version of MicroSim's magnetic core library.
*   You are welcome to make as many copies of it as you find convenient.

* Release date: November 1988

* The parameters in this model library were derived from the data sheets for
* each core.  The Jiles-Atherton magnetics model is described in:
*
*   Theory of Ferromagnetic Hysteresis, by D C Jiles and D L Atherton,
*   Journal of Magnetism and Magnetic Materials, vol 61 (1986) pp 48-60
*
* Model parameters for ferrite material (Ferroxcube 3C8) were obtained by
* trial simulations, using the B-H curves from the manufacturer's catalog.
* Then, the library was compiled from the data sheets for each core geometry.
* Notice that only the geometric values change once a material is
* characterized.

* Example use:  K2 L2 .99 K1409PL_3C8

* Notes:
*   1) Using a K device (formerly only for mutual coupling) with a model
*   reference changes the meaning of the L device: the inductance value
*   becomes the number of turns for the winding.
*   2) K devices can "get away" with specifying only one inductor, as in the
*   example above, to simulate power inductors.

* Example circuit file:

*+-----------------------------------------------------------------------------
*|Demonstration of power inductor B-H curve
*|
*|* To view results with Probe (B-H curve):
*|* 1) Add Trace for B(K1)
*|* 2) set X-axis variable to H(K1)
*|*
*|* Probe x-axis unit is Oersted
*|* Probe y-axis unit is Gauss
*|*
*|.tran .1 4
*|igen0 0 1 sin(0 .1amp 1Hz 0)	; Generator: starts with 0.1 amp sinewave, then
*|igen1 0 1 sin(0 .1amp 1Hz 1)	;   +0.1 amps, starting at 1 second
*|igen2 0 1 sin(0 .2amp 1Hz 2)	;   +0.2 amps, starting at 2 seconds
*|igen3 0 1 sin(0 .8amp 1Hz 3)	;   +0.4 amps, starting at 3 seconds
*|RL 1 0 1ohm			; generator source resistance
*|L1 1 0 20			; inductor with 20 turns
*|K1 L1 .9999 K528T500_3C8	; Ferroxcube torroid core
*|.model K528T500_3C8	Core(MS=420E3 ALPHA=2E-5 A=26 K=18 C=1.05
*|+			AREA=1.17 PATH=8.49)
*|.options itl5=0
*|.probe
*|.end
*+-----------------------------------------------------------------------------

*** Ferroxcube pot cores: 3C8 material

.model K3019PL_3C8	Core(Ms=420E3 Alpha=2E-5 A=26 K=18 C=1.05
+			Area=1.38 Path=4.52)

*** Ferroxcube square cores: 3C8 material

.model KRM8PL_3C8	Core(Ms=420E3 Alpha=2E-5 A=26 K=18 C=1.05
+			Area=.630 Path=3.84)

*** Ferroxcube toroid cores: 3C8 material

.model K502T300_3C8	Core(Ms=420E3 Alpha=2E-5 A=26 K=18 C=1.05
+			Area=.371 Path=7.32)

*** end of library file
* Library of standard devices
*
* This is the master library for MicroSim's standard parts libraries.
*   You are welcome to make as many copies of it as you find convenient.
*
* Release date: November 1988
*
* This "master library" file calls out the other libraries which we supply.
* It takes time for PSpice to scan each library file.  When possible, PSpice
* creates an index file, called <filename>.IDX, to speed up the search process.
* The index file re-created whenever PSpice senses that it might be invalid.

* If the library search times are too long, you may want to "comment out"
* references to device libraries which you are not using.  Also, you can always
* bypass the library approach and simply copy the model or subcircuit which you
* need directly into your circuit file.

.lib Bipolar.lib	; Bipolar transistors
.lib Diode.lib		; Diodes
.lib JFET.lib		; JFET transistors
.lib Linear.lib		; Linear ICs: op-amps and voltage comparators
.lib Magnetic.lib	; Non-linear transformer cores
.lib PwrMOS.lib		; Power MOSFETs
*
* End of library file
* Library of MOSFET model parameters (for "power" MOSFET devices)
*
* This is a reduced version of MicroSim's power MOSFET model library.
*   You are welcome to make as many copies of it as you find convenient.
*
* Release date: November 1988
*
* The parameters in this model library were derived from the data sheets for
* each part.  Each part was characterize using the Parts option.
* Device can also be characterized without Parts as follows:
*	LEVEL		Set to 3 (short-channel device).
*	TOX		Determined from gate ratings.
*	L, LD, W, WD	Assume L=2u.  Calculate from input capacitance.
*	XJ, NSUB	Assume usual technology.
*	IS, RD, RB	Determined from "source-drain diode forward voltage"
*			specification or curve (Idr vs. Vsd).
*	RS		Determine from Rds(on) specification.
*	RDS		Calculated from Idss specification or curves.
*	VTO, UO, THETA	Determined from "output characteristics" curve family
*			(Ids vs. Vds, stepped Vgs).
*	ETA, VMAX, CBS	Set for null effect.
*	CBD, PB, MJ	Determined from "capacitance vs. Vds" curves.
*	RG		Calculate from rise/fall time specification or curves.
*	CGSO, CGDO	Determined from gate-charge, turn-on/off delay and
*			rise time specifications.
*
* NOTE:	when specifying the instance of a device in your circuit file:
*
*	BE SURE to have the source and bulk nodes connected together, as this
*	is the way the real device is constructed.
*
*	DO NOT include values for L, W, AD, AS, PD, PS, NRD, or NDS.
*	The PSpice default values for these parameters are taken into account
*	in the library model statements.  Of course, you should NOT reset
*	the default values using the .OPTIONS statement, either.
*
* Example use:	M17	15 23 7 7	IRF150
*
* - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
*
* The "power" MOSFET device models benefit from relatively complete specifi-
* cation of static and dynamic characteristics by their manufacturers.  The
* following effects are modeled:
*	- DC transfer curves in forward operation,
*	- gate drive characteristics and switching delay,
*	- "on" resistance,
*	- reverse-mode "body-diode" operation.
*
* The factors not modeled include:
*	- maximum ratings (eg. high-voltage breakdown),
*	- safe operating area (eg. power dissipation),
*	- latch-up,
*	- noise.
*
* For high-current switching applications, we advise that you include
* series inductance elements, for the source and drain, in your circuit file.
* In doing so, voltage spikes due to di/dt will be modeled.  According to the
* 1985 International Rectifier databook, the following case styles have lead
* inductance values of:
*	TO-204 (modified TO-3)	source = 12.5nH		drain = 5.0nH
*	TO-220			source =  7.5nH		drain = 3.5-4.5nH
* - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
*
.model IRF150	NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0
+		Tox=100n Uo=600 Phi=.6 Rs=1.624m Kp=20.53u W=.3 L=2u Vto=2.831
+	        Rd=1.031m Rds=444.4K Cbd=3.229n Pb=.8 Mj=.5 Fc=.5 Cgso=9.027n
+		Cgdo=1.679n Rg=13.89 Is=194E-18 N=1 Tt=288n)
*		Int'l Rectifier	pid=IRFC150	case=TO3
*		88-08-25 bam	creation

.model IRF9140	PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0
+		Tox=100n Uo=300 Phi=.6 Rs=70.6m Kp=10.15u W=1.9 L=2u Vto=-3.67
+		Rd=60.66m Rds=444.4K Cbd=2.141n Pb=.8 Mj=.5 Fc=.5 Cgso=877.2p
+		Cgdo=369.3p Rg=.811 Is=52.23E-18 N=2 Tt=140n)
*		Int'l Rectifier  pid=IRFC9140	case=TO3
*		88-08-25 bam	creation

* End of library file


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