GreatNorthCollective/greatnorth-canada-federal-laws-text huggingface dataset:
Export Control List — (A)
(A) quantum computers, as follows: (I) quantum computers supporting 34 or more, but fewer than 100, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 10 -4 , (II) quantum computers supporting 100 or more, but fewer than 200, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 10 -3 , (III) quantum computers supporting 200 or more, but fewer than 350, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 2 x 10 -3 , (IV) quantum computers supporting 350 or more, but fewer than 500, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 3 x 10 -3 , (V) quantum computers supporting 500 or more, but fewer than 700, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 4 x 10 -3 , (VI) quantum computers supporting 700 or more, but fewer than 1,100, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 5 x 10 -3 , (VII) quantum computers supporting 1,100 or more, but fewer than 2,000, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 6 x 10 -3 , and (VIII) quantum computers supporting 2,000 or more fully controlled, connected and working physical qubits,
Export Control List — (I)
(I) quantum computers supporting 34 or more, but fewer than 100, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 10 -4 ,
Export Control List — (II)
(II) quantum computers supporting 100 or more, but fewer than 200, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 10 -3 ,
Export Control List — (III)
(III) quantum computers supporting 200 or more, but fewer than 350, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 2 x 10 -3 ,
Export Control List — (IV)
(IV) quantum computers supporting 350 or more, but fewer than 500, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 3 x 10 -3 ,
Export Control List — (V)
(V) quantum computers supporting 500 or more, but fewer than 700, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 4 x 10 -3 ,
Export Control List — (VI)
(VI) quantum computers supporting 700 or more, but fewer than 1,100, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 5 x 10 -3 ,
Export Control List — (VII)
(VII) quantum computers supporting 1,100 or more, but fewer than 2,000, fully controlled, connected and working physical qubits, and having a C-NOT error of less than or equal to 6 x 10 -3 , and
Export Control List — (VIII)
(VIII) quantum computers supporting 2,000 or more fully controlled, connected and working physical qubits,
Export Control List — (B)
(B) qubit devices and qubit circuits, containing or supporting arrays of physical qubits, and specially designed for items specified in clause (A), and
Export Control List — (C)
(C) quantum control components and quantum measurement devices specially designed for items specified in clause (A),
Export Control List — 1
NOTE 1 Items in clause (B) include semiconductor, superconducting and photonic qubit chips and chip arrays, surface ion trap arrays, other qubit confinement technology, and coherent interconnects between such items. 2 Clause (C) applies to items designed for calibrating, initializing, manipulating or measuring the resident qubits of a quantum computer. 3 Subparagraph (ii) applies to circuit model (or gate-based) and one-way (or measurement-based) quantum computers but does not apply to adiabatic (or annealing) quantum computers. 4 Items specified in subparagraph (ii) may not necessarily physically contain any qubits. For example, quantum computers based on photonic schemes do not permanently contain a physical item that can be identified as a qubit. Instead, photonic qubits are generated while the computer is operating and then later discarded. 5 In subparagraph (ii), physical qubit means a two-level quantum system used to represent the elementary unit of quantum logic by means of manipulations and measurements that are not error-corrected. Physical qubits are distinguished from logical qubits, in that logical qubits are error-corrected qubits composed of many physical qubits. 6 In clause (A), supporting 34 or more fully controlled, connected, working physical qubits refers to the capability of a quantum computer to confine, control, measure and process the quantum information embodied in 34 or more physical qubits. 7 In clause (A), fully controlled means that the physical qubit can be calibrated, initialized, gated and read out, as necessary. 8 In clause (A), connected means that two-qubit gate operations can be performed between any arbitrary pair of the available working physical qubits. This does not necessarily entail all-to-all connectivity. 9 In clause (A), working means that the physical qubit performs universal quantum computational work according to the system specifications for qubit operational fidelity. 10 In clause (A), C-NOT error means the average physical gate error for the nearest-neighbour two-physical qubit Controlled-NOT (C-NOT) gates.
Export Control List — 1
1 Items in clause (B) include semiconductor, superconducting and photonic qubit chips and chip arrays, surface ion trap arrays, other qubit confinement technology, and coherent interconnects between such items.
Export Control List — 2
2 Clause (C) applies to items designed for calibrating, initializing, manipulating or measuring the resident qubits of a quantum computer.
Export Control List — 3
3 Subparagraph (ii) applies to circuit model (or gate-based) and one-way (or measurement-based) quantum computers but does not apply to adiabatic (or annealing) quantum computers.
Export Control List — 4
4 Items specified in subparagraph (ii) may not necessarily physically contain any qubits. For example, quantum computers based on photonic schemes do not permanently contain a physical item that can be identified as a qubit. Instead, photonic qubits are generated while the computer is operating and then later discarded.
Export Control List — 5
5 In subparagraph (ii), physical qubit means a two-level quantum system used to represent the elementary unit of quantum logic by means of manipulations and measurements that are not error-corrected. Physical qubits are distinguished from logical qubits, in that logical qubits are error-corrected qubits composed of many physical qubits.
Export Control List — 6
6 In clause (A), supporting 34 or more fully controlled, connected, working physical qubits refers to the capability of a quantum computer to confine, control, measure and process the quantum information embodied in 34 or more physical qubits.
Export Control List — 7
7 In clause (A), fully controlled means that the physical qubit can be calibrated, initialized, gated and read out, as necessary.
Export Control List — 8
8 In clause (A), connected means that two-qubit gate operations can be performed between any arbitrary pair of the available working physical qubits. This does not necessarily entail all-to-all connectivity.
Export Control List — 9
9 In clause (A), working means that the physical qubit performs universal quantum computational work according to the system specifications for qubit operational fidelity.
Export Control List — 10
10 In clause (A), C-NOT error means the average physical gate error for the nearest-neighbour two-physical qubit Controlled-NOT (C-NOT) gates.
Export Control List — (iii)
(iii) parametric signal amplifiers designed to operate at an ambient temperature below 1 K (-272.15 ℃) and at a frequency from 2 GHz to 15 GHz, and having a noise figure of less than 0.015 dB when operating at that temperature and frequency, NOTE In subparagraph (iii), parametric signal amplifier , or Quantum-Limited Amplifier (QLA), includes a Travelling Wave Parametric Amplifier (TWPA).
Export Control List — Export Control List
NOTE In subparagraph (iii), parametric signal amplifier , or Quantum-Limited Amplifier (QLA), includes a Travelling Wave Parametric Amplifier (TWPA).
Export Control List — Export Control List
In subparagraph (iii), parametric signal amplifier , or Quantum-Limited Amplifier (QLA), includes a Travelling Wave Parametric Amplifier (TWPA).
Export Control List — (iv)
(iv) cryogenic cooling systems and components, as follows: (A) systems rated to provide a cooling power of 600 µW or more at a temperature of 0.1 K (-273.05°C) or lower for more than 48 hours, and (B) two-stage pulse tube cryocoolers rated to maintain a temperature lower than 4 K (-269.15°C) and to provide a cooling power of 1.5 W or more at a temperature of 4.2 K (-268.95°C) or lower;
Export Control List — (A)
(A) systems rated to provide a cooling power of 600 µW or more at a temperature of 0.1 K (-273.05°C) or lower for more than 48 hours, and
Export Control List — (B)
(B) two-stage pulse tube cryocoolers rated to maintain a temperature lower than 4 K (-269.15°C) and to provide a cooling power of 1.5 W or more at a temperature of 4.2 K (-268.95°C) or lower;
Export Control List — (d)
ment specified in clause (C), NOTE 1 In clauses (C) and (D), in-process monitoring , also known as in-situ process monitoring, means the observation and measurement of the additive manufacturing process including the measurement of electromagnetic or thermal emissions from the melt pool. 2 In clause (C), coaxial configuration , also known as on-axis or inline configuration, means a configuration in which one or more sensors are mounted in an optical path shared by the laser consolidation source. 3 In clause (C), paraxial configuration means a configuration in which one or more sensors are mounted onto or integrated into the laser, electron beam, or electric arc consolidation source component. 4 In clause (C), for both coaxial configuration and paraxial configuration, the field of view of the sensors is fixed to the moving reference frame of the consolidation source and moves in the same scan trajectory throughout the build process. (vi) Extreme Ultraviolet (EUV) lithography masks and EUV lithography reticles, designed for integrated circuits, and having mask substrate blanks specified in paragraph 1-3.B.1.j of the Guide, NOTE Subparagraph (vi) also applies to masks and reticles with a mounted pellicle. (vii) pellicles specially designed for EUV lithography, and NOTE 1 In subparagraphs (vi) and (vii), pellicle means a membrane that is integrated with a frame and that is designed to protect a mask or reticle from particle contamination. 2 In subparagraphs (vi) and (vii), Extreme Ultraviolet means electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm. (viii) cryogenic wafer probing equipment designed to test devices at a temperature less than or equal to 4.5 K (-268.65°C), and to accommodate wafer diameters greater than or equal to 100 mm;
Export Control List — (i)
(i) masks and reticles designed for integrated circuits specified in subparagraph (c)(i),
Export Control List — (ii)
(ii) imprint lithography templates designed for integrated circuits specified in subparagraph (c)(i),
Export Control List — (iii)
(iii) equipment designed for dry etching, as follows: (A) equipment designed or modified for isotropic dry etching and having a largest silicon-germanium to silicon (SiGe:Si) etch selectivity greater than or equal to 100:1, or NOTE For the purposes of clause (A), silicon-germanium to silicon (SiGe:Si) etch selectivity is measured for a germanium (Ge) concentration of greater than or equal to 30% (Si 0.70 Ge 0.30 ). (B) equipment designed or modified for anisotropic dry etching, and having all of the following: (I) one or more Radio Frequency (RF) power sources with at least one pulsed Radio Frequency (RF) output, (II) one or more fast gas switching valves with a switching time of less than 300 ms, (III) an electrostatic chuck with 20 or more individually controllable variable temperature elements, and NOTE 1 Clause (B) includes etching using Radio Frequency (RF) pulse excited plasma, pulsed duty cycle excited plasma, pulsed voltage on electrodes modified plasma, or cyclic injection and purging of gases combined with a plasma; plasma atomic layer etching; and plasma quasi-atomic layer etching. 2 Subparagraph (iii) includes etching by radicals, ions, sequential reactions, or non-sequential reaction. 3 In note 2, radical means an atom, molecule, or ion that has an unpaired electron in an open electron shell configuration.
Export Control List — (A)
(A) equipment designed or modified for isotropic dry etching and having a largest silicon-germanium to silicon (SiGe:Si) etch selectivity greater than or equal to 100:1, or NOTE For the purposes of clause (A), silicon-germanium to silicon (SiGe:Si) etch selectivity is measured for a germanium (Ge) concentration of greater than or equal to 30% (Si 0.70 Ge 0.30 ).
Export Control List — Export Control List
NOTE For the purposes of clause (A), silicon-germanium to silicon (SiGe:Si) etch selectivity is measured for a germanium (Ge) concentration of greater than or equal to 30% (Si 0.70 Ge 0.30 ).
Export Control List — Export Control List
For the purposes of clause (A), silicon-germanium to silicon (SiGe:Si) etch selectivity is measured for a germanium (Ge) concentration of greater than or equal to 30% (Si 0.70 Ge 0.30 ).
Export Control List — (B)
(B) equipment designed or modified for anisotropic dry etching, and having all of the following: (I) one or more Radio Frequency (RF) power sources with at least one pulsed Radio Frequency (RF) output, (II) one or more fast gas switching valves with a switching time of less than 300 ms, (III) an electrostatic chuck with 20 or more individually controllable variable temperature elements, and NOTE 1 Clause (B) includes etching using Radio Frequency (RF) pulse excited plasma, pulsed duty cycle excited plasma, pulsed voltage on electrodes modified plasma, or cyclic injection and purging of gases combined with a plasma; plasma atomic layer etching; and plasma quasi-atomic layer etching. 2 Subparagraph (iii) includes etching by radicals, ions, sequential reactions, or non-sequential reaction. 3 In note 2, radical means an atom, molecule, or ion that has an unpaired electron in an open electron shell configuration.
Export Control List — (I)
(I) one or more Radio Frequency (RF) power sources with at least one pulsed Radio Frequency (RF) output,
Export Control List — (II)
(II) one or more fast gas switching valves with a switching time of less than 300 ms,
Export Control List — (III)
(III) an electrostatic chuck with 20 or more individually controllable variable temperature elements, and
Export Control List — 1
NOTE 1 Clause (B) includes etching using Radio Frequency (RF) pulse excited plasma, pulsed duty cycle excited plasma, pulsed voltage on electrodes modified plasma, or cyclic injection and purging of gases combined with a plasma; plasma atomic layer etching; and plasma quasi-atomic layer etching. 2 Subparagraph (iii) includes etching by radicals, ions, sequential reactions, or non-sequential reaction. 3 In note 2, radical means an atom, molecule, or ion that has an unpaired electron in an open electron shell configuration.
Export Control List — 1
1 Clause (B) includes etching using Radio Frequency (RF) pulse excited plasma, pulsed duty cycle excited plasma, pulsed voltage on electrodes modified plasma, or cyclic injection and purging of gases combined with a plasma; plasma atomic layer etching; and plasma quasi-atomic layer etching.
Export Control List — 2
2 Subparagraph (iii) includes etching by radicals, ions, sequential reactions, or non-sequential reaction.
Export Control List — 3
3 In note 2, radical means an atom, molecule, or ion that has an unpaired electron in an open electron shell configuration.
Export Control List — (iv)
(iv) Scanning Electron Microscope (SEM) equipment designed for imaging semiconductor devices or integrated circuits, and having all of the following: (A) a stage placement accuracy less (better) than 30 nm, (B) a stage positioning measurement performed using laser interferometry, (C) a position calibration within a Field-of-View (FOV) based on laser interferometer length-scale measurement, (D) a collection and storage of images with more than 2 x 10 8 pixels, (E) a Field-of-View (FOV) overlap of less than 5% in vertical and horizontal directions, (F) a Field-of-View (FOV) stitching overlap of less than 50 nm, and (G) an accelerating voltage of more than 21 kV, NOTE 1 Subparagraph (iv) includes Scanning Electron Microscope (SEM) equipment designed for chip design recovery. 2 Subparagraph (iv) does not apply to Scanning Electron Microscope (SEM) equipment designed to accept a Semiconductor Equipment and Materials International (SEMI) standard wafer carrier, such as a 200 mm or larger Front Opening Unified Pod (FOUP).
Export Control List — (A)
(A) a stage placement accuracy less (better) than 30 nm,
Export Control List — (B)
(B) a stage positioning measurement performed using laser interferometry,
Export Control List — (C)
(C) a position calibration within a Field-of-View (FOV) based on laser interferometer length-scale measurement,
Export Control List — (D)
(D) a collection and storage of images with more than 2 x 10 8 pixels,
Export Control List — (E)
(E) a Field-of-View (FOV) overlap of less than 5% in vertical and horizontal directions,
Export Control List — (F)
(F) a Field-of-View (FOV) stitching overlap of less than 50 nm, and
Export Control List — (G)
(G) an accelerating voltage of more than 21 kV,
Export Control List — 1
NOTE 1 Subparagraph (iv) includes Scanning Electron Microscope (SEM) equipment designed for chip design recovery. 2 Subparagraph (iv) does not apply to Scanning Electron Microscope (SEM) equipment designed to accept a Semiconductor Equipment and Materials International (SEMI) standard wafer carrier, such as a 200 mm or larger Front Opening Unified Pod (FOUP).
Export Control List — 1
1 Subparagraph (iv) includes Scanning Electron Microscope (SEM) equipment designed for chip design recovery.
Export Control List — 2
2 Subparagraph (iv) does not apply to Scanning Electron Microscope (SEM) equipment designed to accept a Semiconductor Equipment and Materials International (SEMI) standard wafer carrier, such as a 200 mm or larger Front Opening Unified Pod (FOUP).
Export Control List — (v)
(v) additive manufacturing machines designed to produce metal or metal alloy components and having the following characteristics, and specially designed components for those machines: (A) the consolidation source is one or more of the following : (I) a laser, (II) an electron beam, or (III) an electric arc, (B) during manufacturing, the controlled process atmosphere consists of: (I) an inert gas, or (II) a vacuum (pressure equal to or less than 100 Pa), (C) the in-process monitoring equipment in a coaxial or paraxial configuration has any of the following: (I) an imaging camera with a peak response at a wavelength that is greater than 380 nm and less than or equal to 14,000 nm, (II) a pyrometer designed to measure temperatures greater than 1,273.15K (1,000°C), or (III) a radiometer or spectrometer with a peak response at a wavelength that is greater than 380 nm and less than or equal to 3,000 nm, and (D) the closed-loop control systems are designed to modify the consolidation source parameters, build paths, or equipment settings during the build cycle in response to feedback from in-process monitoring equipment specified in clause (C), NOTE 1 In clauses (C) and (D), in-process monitoring , also known as in-situ process monitoring, means the observation and measurement of the additive manufacturing process including the measurement of electromagnetic or thermal emissions from the melt pool. 2 In clause (C), coaxial configuration , also known as on-axis or inline configuration, means a configuration in which one or more sensors are mounted in an optical path shared by the laser consolidation source. 3 In clause (C), paraxial configuration means a configuration in which one or more sensors are mounted onto or integrated into the laser, electron beam, or electric arc consolidation source component. 4 In clause (C), for both coaxial configuration and paraxial configuration, the field of view of the sensors is fixed to the moving reference frame of the consolidation source and moves in the same scan trajectory throughout the build process.
Export Control List — (A)
(A) the consolidation source is one or more of the following : (I) a laser, (II) an electron beam, or (III) an electric arc,
Export Control List — (B)
(B) during manufacturing, the controlled process atmosphere consists of: (I) an inert gas, or (II) a vacuum (pressure equal to or less than 100 Pa),
Export Control List — (II)
(II) a vacuum (pressure equal to or less than 100 Pa),
Export Control List — (C)
(C) the in-process monitoring equipment in a coaxial or paraxial configuration has any of the following: (I) an imaging camera with a peak response at a wavelength that is greater than 380 nm and less than or equal to 14,000 nm, (II) a pyrometer designed to measure temperatures greater than 1,273.15K (1,000°C), or (III) a radiometer or spectrometer with a peak response at a wavelength that is greater than 380 nm and less than or equal to 3,000 nm, and
Export Control List — (I)
(I) an imaging camera with a peak response at a wavelength that is greater than 380 nm and less than or equal to 14,000 nm,
Export Control List — (II)
(II) a pyrometer designed to measure temperatures greater than 1,273.15K (1,000°C), or
Export Control List — (III)
(III) a radiometer or spectrometer with a peak response at a wavelength that is greater than 380 nm and less than or equal to 3,000 nm, and
Export Control List — (D)
(D) the closed-loop control systems are designed to modify the consolidation source parameters, build paths, or equipment settings during the build cycle in response to feedback from in-process monitoring equipment specified in clause (C), NOTE 1 In clauses (C) and (D), in-process monitoring , also known as in-situ process monitoring, means the observation and measurement of the additive manufacturing process including the measurement of electromagnetic or thermal emissions from the melt pool. 2 In clause (C), coaxial configuration , also known as on-axis or inline configuration, means a configuration in which one or more sensors are mounted in an optical path shared by the laser consolidation source. 3 In clause (C), paraxial configuration means a configuration in which one or more sensors are mounted onto or integrated into the laser, electron beam, or electric arc consolidation source component. 4 In clause (C), for both coaxial configuration and paraxial configuration, the field of view of the sensors is fixed to the moving reference frame of the consolidation source and moves in the same scan trajectory throughout the build process.
Export Control List — 1
NOTE 1 In clauses (C) and (D), in-process monitoring , also known as in-situ process monitoring, means the observation and measurement of the additive manufacturing process including the measurement of electromagnetic or thermal emissions from the melt pool. 2 In clause (C), coaxial configuration , also known as on-axis or inline configuration, means a configuration in which one or more sensors are mounted in an optical path shared by the laser consolidation source. 3 In clause (C), paraxial configuration means a configuration in which one or more sensors are mounted onto or integrated into the laser, electron beam, or electric arc consolidation source component. 4 In clause (C), for both coaxial configuration and paraxial configuration, the field of view of the sensors is fixed to the moving reference frame of the consolidation source and moves in the same scan trajectory throughout the build process.