Export Control List — (2)
d for integrated circuits specified in subparagraph (c)(i), (ii) imprint lithography templates designed for integrated circuits specified in subparagraph (c)(i), (iii) equipment designed for dry etching, as follows: (A) equipment designed or modified for isotropic dry etching and having a largest silicon-germanium to silicon (SiGe:Si) etch selectivity greater than or equal to 100:1, or NOTE For the purposes of clause (A), silicon-germanium to silicon (SiGe:Si) etch selectivity is measured for a germanium (Ge) concentration of greater than or equal to 30% (Si 0.70 Ge 0.30 ). (B) equipment designed or modified for anisotropic dry etching, and having all of the following: (I) one or more Radio Frequency (RF) power sources with at least one pulsed Radio Frequency (RF) output, (II) one or more fast gas switching valves with a switching time of less than 300 ms, (III) an electrostatic chuck with 20 or more individually controllable variable temperature elements, and NOTE 1 Clause (B) includes etching using Radio Frequency (RF) pulse excited plasma, pulsed duty cycle excited plasma, pulsed voltage on electrodes modified plasma, or cyclic injection and purging of gases combined with a plasma; plasma atomic layer etching; and plasma quasi-atomic layer etching. 2 Subparagraph (iii) includes etching by radicals, ions, sequential reactions, or non-sequential reaction. 3 In note 2, radical means an atom, molecule, or ion that has an unpaired electron in an open electron shell configuration. (iv) Scanning Electron Microscope (SEM) equipment designed for imaging semiconductor devices or integrated circuits, and having all of the following: (A) a stage placement accuracy less (better) than 30 nm, (B) a stage positioning measurement performed using laser interferometry, (C) a position calibration within a Field-of-View (FOV) based on laser interferometer length-scale measurement, (D) a collection and storage of images with more than 2 x 10 8 pixels, (E) a Field-of-View (FOV) overlap of less than 5% in vertical and horizontal directions, (F) a Field-of-View (FOV) stitching overlap of less than 50 nm, and (G) an accelerating voltage of more than 21 kV, NOTE 1 Subparagraph (iv) includes Scanning Electron Microscope (SEM) equipment designed for chip design recovery. 2 Subparagraph (iv) does not apply to Scanning Electron Microscope (SEM) equipment designed to accept a Semiconductor Equipment and Materials International (SEMI) standard wafer carrier, such as a 200 mm or larger Front Opening Unified Pod (FOUP). (v) additive manufacturing machines designed to produce metal or metal alloy components and having the following characteristics, and specially designed components for those machines: (A) the consolidation source is one or more of the following : (I) a laser, (II) an electron beam, or (III) an electric arc, (B) during manufacturing, the controlled process atmosphere consists of: (I) an inert gas, or (II) a vacuum (pressure equal to or less than 100 Pa), (C) the in-process monitoring equipment in a coaxial or paraxial configuration has any of the following: (I) an imaging camera with a peak response at a wavelength that is greater than 380 nm and less than or equal to 14,000 nm, (II) a pyrometer designed to measure temperatures greater than 1,273.15K (1,000°C), or (III) a radiometer or spectrometer with a peak response at a wavelength that is greater than 380 nm and less than or equal to 3,000 nm, and (D) the closed-loop control systems are designed to modify the consolidation source parameters, build paths, or equipment settings during the build cycle in response to feedback from in-process monitoring equipment specified in clause (C), NOTE 1 In clauses (C) and (D), in-process monitoring , also known as in-situ process monitoring, means the observation and measurement of the additive manufacturing process including the measurement of electromagnetic or thermal emissions from the melt pool. 2 In clause (C), coaxial configuration , also known a