Reference number : GC-2017-Q1-00366, amendment number : , agreement type : G, recipient legal name : Tiedje, Thomas (University of Victoria), recipient country : CA, recipient province : nan, recipient city : British Columbia|Colombie-Britannique, recipient postal code : nan, program name english : Engage Grants for Universities, program name french : Subventions d'engagement partenarial pour les universités, program purpose english : CdZnTe is an emerging semiconductor alloy used in high energy x-ray detectors for medical diagnostics and_x000D_
security applications. The performance of the detectors depends on controlling the density of electronically_x000D_
active defects which trap charge generated by absorbed x-rays and act as recombination centres. The density of_x000D_
defects is affected by the crystal growth process and post growth processing of the crystals in ways that are still_x000D_
poorly understood. In order to improve the quality of the detector material and to reduce the cost of_x000D_
manufacturing detectors it would be desirable to have a fast contactless method for quantifying the density of_x000D_
defects and their chemical origin as well as for spatial mapping defects. Variable temperature_x000D_
photoluminescence (PL) is a contactless technique that can potentially satisfy these requirements. PL is_x000D_
sensitive to low densities of defects, can probe small areas and can provide chemical specificity through the_x000D_
emission spectrum. In this project we will explore the applicability of PL for the routine assessment of the_x000D_
electronic properties of device quality CdZnTe., program purpose french : CdZnTe is an emerging semiconductor alloy used in high energy x-ray detectors for medical diagnostics and_x000D_
security applications. The performance of the detectors depends on controlling the density of electronically_x000D_
active defects which trap charge generated by absorbed x-rays and act as recombination centres. The density of_x000D_
defects is affected by the crystal growth process and post growth processing of the crystals in ways that are still_x000D_
poorly understood. In order to improve the quality of the detector material and to reduce the cost of_x000D_
manufacturing detectors it would be desirable to have a fast contactless method for quantifying the density of_x000D_
defects and their chemical origin as well as for spatial mapping defects. Variable temperature_x000D_
photoluminescence (PL) is a contactless technique that can potentially satisfy these requirements. PL is_x000D_
sensitive to low densities of defects, can probe small areas and can provide chemical specificity through the_x000D_
emission spectrum. In this project we will explore the applicability of PL for the routine assessment of the_x000D_
electronic properties of device quality CdZnTe., agreement title english : Contactless detection and analysis of electronic defects in CdZnTe, agreement title french : Contactless detection and analysis of electronic defects in CdZnTe, agreement number : EGP, agreement value : 25000.0, agreement start date : 2017-06-14, agreement end date : nan, description english : nan, description french : nan, expected results english : nan, expected results french : nan, additional information english : Grant or Award spanning more than one fiscal year. (2017-2018 to 2018-2019), additional information french : Subvention ou bourse octroyée s'appliquant à plus d'un exercice financier. (2017-2018 à 2018-2019), owner organization : nserc-crsng, owner organization title : Natural Sciences and Engineering Research Council of Canada | Conseil de recherches en sciences naturelles et en génie du Canada