Reference number : GC-2017-Q4-01313, amendment number : , agreement type : G, recipient legal name : Moutanabbir, Oussama (École Polytechnique de Montréal), recipient country : CA, recipient province : nan, recipient city : Quebec|Québec, recipient postal code : nan, program name english : Collaborative Research and Development Grants - Project, program name french : Subventions de recherche et développement coopérative - projet, program purpose english : The global acceleration of the information technology creates pressing needs for cost-effective broadband, high-density, and high-speed data interconnections for high-performance, energy-efficient signal processing and computing. This increasing demand will push the limits of the electrical interconnects by forcing the transmission distance to shrink, which limits architectures and exacerbates heat dissipation challenges as a result of forcing hot processors closer and closer together. Optical interconnections via silicon photonic platforms have recently been recognized as critical to overcome this technological bottleneck.  One of the key components of silicon photonics is the integrated light source which serves as the electrical to optical converter. The on-chip light sources are crucial to achieve a higher integration density, higher scalability, and a better energy efficiency. However, the fact that Si is an indirect bandgap semiconductor and thus a poor light emitter has been a major hurdle facing the development of silicon photonics._x000D_
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To circumvent these limitations, this project focuses on developing group IV light sources by exploiting the emerging silicon-germanium-tin (SiGeSn) semiconductors. The project will capitalize on the fact that SiGeSn semiconductors can be grown on silicon wafers to achieve scalable, cost-effective Si photonic devices. The project will introduce these emerging semiconductors to design and implement three indispensable light emitting devices operating in the wavelength range of 2-5 µm, which provides a cost-effective alternative for inter-chip communications. Developing these mid-infrared devices will also create far-reaching new opportunities to interface electronics and biological and chemical sensing as important organic molecules and gases exhibit absorption bands in this wavelength range. This novel family of light emitting devices will benefit from the compatibility with complementary metal oxide semiconductor (CMOS) processing leading to a full exploitation of the current microelectronic and optoelectronic technologies._x000D_
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_x000D_, program purpose french : The global acceleration of the information technology creates pressing needs for cost-effective broadband, high-density, and high-speed data interconnections for high-performance, energy-efficient signal processing and computing. This increasing demand will push the limits of the electrical interconnects by forcing the transmission distance to shrink, which limits architectures and exacerbates heat dissipation challenges as a result of forcing hot processors closer and closer together. Optical interconnections via silicon photonic platforms have recently been recognized as critical to overcome this technological bottleneck.  One of the key components of silicon photonics is the integrated light source which serves as the electrical to optical converter. The on-chip light sources are crucial to achieve a higher integration density, higher scalability, and a better energy efficiency. However, the fact that Si is an indirect bandgap semiconductor and thus a poor light emitter has been a major hurdle facing the development of silicon photonics._x000D_
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To circumvent these limitations, this project focuses on developing group IV light sources by exploiting the emerging silicon-germanium-tin (SiGeSn) semiconductors. The project will capitalize on the fact that SiGeSn semiconductors can be grown on silicon wafers to achieve scalable, cost-effective Si photonic devices. The project will introduce these emerging semiconductors to design and implement three indispensable light emitting devices operating in the wavelength range of 2-5 µm, which provides a cost-effective alternative for inter-chip communications. Developing these mid-infrared devices will also create far-reaching new opportunities to interface electronics and biological and chemical sensing as important organic molecules and gases exhibit absorption bands in this wavelength range. This novel family of light emitting devices will benefit from the compatibility with complementary metal oxide semiconductor (CMOS) processing leading to a full exploitation of the current microelectronic and optoelectronic technologies._x000D_
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_x000D_, agreement title english : Mid-infrared integrated optoelectronics on silicon, agreement title french : Mid-infrared integrated optoelectronics on silicon, agreement number : CRDPJ, agreement value : 590650.0, agreement start date : 2018-02-07, agreement end date : nan, description english : nan, description french : nan, expected results english : nan, expected results french : nan, additional information english : Grant or Award spanning more than one fiscal year (2017-2018 to 2020-2021)., additional information french : Subvention ou bourse octroyée s'appliquant à plus d'un exercice financier (2017-2018 à 2020-2021)., owner organization : nserc-crsng, owner organization title : Natural Sciences and Engineering Research Council of Canada | Conseil de recherches en sciences naturelles et en génie du Canada