Reference number : GC-2017-Q4-01063, amendment number : , agreement type : G, recipient legal name : Li, Yunwei (University of Alberta), recipient country : CA, recipient province : nan, recipient city : Alberta, recipient postal code : nan, program name english : Engage Grants for universities, program name french : Subventions d'engagement partenarial pour les universités, program purpose english : Gallium Nitride (GaN) power semiconductor devices are promising solutions for increasing the efficiency and_x000D_
power density of power electronics systems. GaN Systems Inc is a world leading company that produce GaN_x000D_
high-electron-mobility transistor (HEMT) devices. GaN HEMTs have been applied in many low voltage and_x000D_
low power applications. For high power systems, the performances of GaN HEMTs have not been fully_x000D_
evaluated. In this Engage project, researchers in University of Alberta will collaborate with GaN Systems_x000D_
engineers to developing a 50kW GaN HEMT based multilevel converter prototype and study the performances_x000D_
of the GaN devices experimentally using the prototype. The project includes circuit parameter design of the_x000D_
prototype, sensing and control scheme development considering the key challenges caused by high switching_x000D_
frequency noises, and experimental study and analysis of the results., program purpose french : Gallium Nitride (GaN) power semiconductor devices are promising solutions for increasing the efficiency and_x000D_
power density of power electronics systems. GaN Systems Inc is a world leading company that produce GaN_x000D_
high-electron-mobility transistor (HEMT) devices. GaN HEMTs have been applied in many low voltage and_x000D_
low power applications. For high power systems, the performances of GaN HEMTs have not been fully_x000D_
evaluated. In this Engage project, researchers in University of Alberta will collaborate with GaN Systems_x000D_
engineers to developing a 50kW GaN HEMT based multilevel converter prototype and study the performances_x000D_
of the GaN devices experimentally using the prototype. The project includes circuit parameter design of the_x000D_
prototype, sensing and control scheme development considering the key challenges caused by high switching_x000D_
frequency noises, and experimental study and analysis of the results., agreement title english : Evaluation of the Performance of GaN HEMT in High Power Multilevel Converters, agreement title french : Evaluation of the Performance of GaN HEMT in High Power Multilevel Converters, agreement number : EGP, agreement value : 25000.0, agreement start date : 2018-03-07, agreement end date : nan, description english : nan, description french : nan, expected results english : nan, expected results french : nan, additional information english : Grant or Award spanning more than one fiscal year (2017-2018 to 2018-2019)., additional information french : Subvention ou bourse octroyée s'appliquant à plus d'un exercice financier (2017-2018 à 2018-2019)., owner organization : nserc-crsng, owner organization title : Natural Sciences and Engineering Research Council of Canada | Conseil de recherches en sciences naturelles et en génie du Canada