Reference number : GC-2017-Q1-00281, amendment number : , agreement type : G, recipient legal name : Maher, Hassan (Université de Sherbrooke), recipient country : CA, recipient province : nan, recipient city : Quebec|Québec, recipient postal code : nan, program name english : Collaborative Research and Development Grants - Project, program name french : Subventions de recherche et développement coopérative - projet, program purpose english : Gallium Nitride (GaN) transistors are emerging as a powerful (literally) new technology to meet tomorrow's needs for high power switching devices. These new transistors use existing know-how in advanced III-V semiconductors, and offer significant performance advantages over conventional silicon-based solutions while being cost-competitive. However, they need to push the electrical and thermal boundaries by improving device design and packaging to deliver actual power performance closer to the theoretical capabilities, and demonstrating improved reliability. _x000D_
The team presenting this proposal combines an emerging global pioneer in commercial GaN transistor technology (Ottawa-based GaN Systems) and the highly-experienced, multidisciplinary research team at the Université de Sherbrooke. Together, the partners propose a systematic study of alternative processing technologies to enhance GaN Systems' competitive edge. Focussing on enhancement of design parameters critical to high power handling (e.g: thermal resistance, breakdown voltage), the Sherbrooke researchers will leverage their capabilities in materials deposition and wafer processing to identify the most effective solutions for future manufacture of cost-competitive devices. _x000D_
Novel to this study is an exploration of major performance enhancements using special post-fabrication back-end process steps on finished commercial foundry wafers, together with integrated drivers for high voltage operation. This would enable GaN Systems to source devices from multiple facilities around the globe, boosting the power performance with a "made in Canada" process step._x000D_
Essential to the outcomes of this study will be an understanding of how degradation and failure mechanisms prevail in this unique wide-bandgap material. The combined forces of GaN Systems (for detailed understanding of device electrical and thermal parameters) with the materials, processing and analytical resources at Sherbrooke, position this study to support a Canada-led power device innovation._x000D_
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_x000D_, program purpose french : Gallium Nitride (GaN) transistors are emerging as a powerful (literally) new technology to meet tomorrow's needs for high power switching devices. These new transistors use existing know-how in advanced III-V semiconductors, and offer significant performance advantages over conventional silicon-based solutions while being cost-competitive. However, they need to push the electrical and thermal boundaries by improving device design and packaging to deliver actual power performance closer to the theoretical capabilities, and demonstrating improved reliability. _x000D_
The team presenting this proposal combines an emerging global pioneer in commercial GaN transistor technology (Ottawa-based GaN Systems) and the highly-experienced, multidisciplinary research team at the Université de Sherbrooke. Together, the partners propose a systematic study of alternative processing technologies to enhance GaN Systems' competitive edge. Focussing on enhancement of design parameters critical to high power handling (e.g: thermal resistance, breakdown voltage), the Sherbrooke researchers will leverage their capabilities in materials deposition and wafer processing to identify the most effective solutions for future manufacture of cost-competitive devices. _x000D_
Novel to this study is an exploration of major performance enhancements using special post-fabrication back-end process steps on finished commercial foundry wafers, together with integrated drivers for high voltage operation. This would enable GaN Systems to source devices from multiple facilities around the globe, boosting the power performance with a "made in Canada" process step._x000D_
Essential to the outcomes of this study will be an understanding of how degradation and failure mechanisms prevail in this unique wide-bandgap material. The combined forces of GaN Systems (for detailed understanding of device electrical and thermal parameters) with the materials, processing and analytical resources at Sherbrooke, position this study to support a Canada-led power device innovation._x000D_
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_x000D_, agreement title english : Advanced back end processing for high breakdown voltage and low thermal resistance GaN power transistor, agreement title french : Advanced back end processing for high breakdown voltage and low thermal resistance GaN power transistor, agreement number : CRDPJ, agreement value : 1500000.0, agreement start date : 2017-06-14, agreement end date : nan, description english : nan, description french : nan, expected results english : nan, expected results french : nan, additional information english : Grant or Award spanning more than one fiscal year. (2017-2018 to 2020-2021), additional information french : Subvention ou bourse octroyée s'appliquant à plus d'un exercice financier. (2017-2018 à 2020-2021), owner organization : nserc-crsng, owner organization title : Natural Sciences and Engineering Research Council of Canada | Conseil de recherches en sciences naturelles et en génie du Canada