FrancophonIA/DGT-Translation_Memory huggingface dataset:
English: Capable of being sterilised or disinfected in situ; or 2. Using disposable or single-use filtration components; Technical Note:
Estonian: d. ristvoolu filtratsiooniaparatuur ja järgmised komponendid:
English: In 2B352.d.1.b. sterlised denotes the elimination of all viable microbes from the equipment through the use of either physical (e.g. steam) or chemical agents. Disinfected denotes the destruction of potential microbial infectivity in the equipment through the use of chemical agents with a germicidal effect.
Estonian: ristvoolu filtratsiooniaparatuur, mis ilma aerosoolide keskkonda sattumise riskita võimaldab patogeensete mikroorganismide, viiruste, toksiinide või rakukultuuride separeerimist ning millel on kõik järgmised omadused:
English: Disinfection and sterilisation are distinct from sanitisation, the latter referring to cleaning procedures designed to lower the microbial content of equipment without necessarily achieving elimination of all microbial infectivity or viability. 2. Cross (tangential) flow filtration components (e.g. modules, elements, cassettes, cartridges, units or plates) with filtration area equal to or greater than 0,2 m2 for each component and designed for use in cross (tangential) flow filtration equipment specified in 2B352.d.; Note:
Estonian: a. filtri kogupindala 1 m2 või rohkem ja
English: d. does not control reverse osmosis equipment, as specified by the manufacturer. e. Steam sterilisable freeze drying equipment with a condenser capacity exceeding 10 kg of ice in 24 hours and less than 1000 kg of ice in 24 hours;
Estonian: b. sellel on mõni järgmistest omadustest:
English: f. Protective and containment equipment, as follows: 1. Protective full or half suits, or hoods dependent upon a tethered external air supply and operating under positive pressure; Note:
Estonian: kohapeal (in situ) steriliseeritav või desinfitseeritav või
English: f.1. does not control suits designed to be worn with self-contained breathing apparatus. 2. Class III biological safety cabinets or isolators with similar performance standards; Note:
Estonian: kasutab vahetatavaid või ühekordseid filtreerimiskomponente;
English: None. 2D
Estonian: f. järgmised kaitsevahendid:
English: Software 2D001
Estonian: pool- või täiskaitseülikonnad või mütsid, mis sõltuvad nende külge kinnitatud välisest õhuvarustussüsteemist ja töötavad ülerõhul;
English: “Software” for electronic devices, even when residing in an electronic device or system, enabling such devices or systems to function as a “numerical control” unit, capable of co-ordinating simultaneously more than four axes for “contouring control”. Note 1:
Estonian: g. aerosoolide inhalatsiooni kambrid, mis on konstrueeritud katseteks „mikroorganismide”, viiruste või „toksiinide” aerosoolidega, mahuga 1 m3 või rohkem.
English: Ceramic substrates, as used in this entry, does not include ceramic materials containing 5 % by weight, or greater, clay or cement content, either as separate constituents or in combination. Table — Deposition Techniques — Technical Note Processes specified in Column 1 of the Table are defined as follows:
Estonian: Keraamilised põhimikud ei hõlma käesolevas tähenduses keraamilisi materjale, mis sisaldavad 5 massiprotsenti või rohkem savi või tsementi kas eraldi komponentidena või kombinatsioonis.
English: a. Chemical Vapour Deposition (CVD) is an overlay coating or surface modification coating process wherein a metal, alloy, “composite”, dielectric or ceramic is deposited upon a heated substrate. Gaseous reactants are decomposed or combined in the vicinity of a substrate resulting in the deposition of the desired elemental, alloy or compound material on the substrate. Energy for this decomposition or chemical reaction process may be provided by the heat of the substrate, a glow discharge plasma, or “laser” irradiation.
Estonian: Tabel – Pinnakatmise tehnikad – Tehniline märkus
English: CVD includes the following processes: directed gas flow out-of-pack deposition, pulsating CVD, controlled nucleation thermal deposition (CNTD), plasma enhanced or plasma assisted CVD processes. NB 2
Estonian: a. Keemiline aurustamine-sadestamine (CVD) on pinnakatmise või pinna muundamise protsess, mille kestel metall, sulam, dielektriline või keraamiline „komposiit”, sadestatakse kuumutatud põhimikule.
English: Pack denotes a substrate immersed in a powder mixture. NB 3
Estonian: Gaasilised reageerivad ained lagunevad või ühinevad põhimiku läheduses, põhjustades soovitud elemendi, sulami või ühendi sadestumise põhimikule.
English: d. Plasma Spraying is an overlay coating process wherein a gun (spray torch) which produces and controls a plasma accepts powder or wire coating materials, melts them and propels them towards a substrate, whereon an integrally bonded coating is formed. Plasma spraying constitutes either low pressure plasma spraying or high velocity plasma spraying.
Estonian: d. Plasmapihustus on üks pinnakatmismenetlus, milles plasmat tekitav ja juhtiv plasmakahur võtab vastu kattematerjali pulbrit või traati, sulatab selle ning paiskab põhimikule, millel moodustubki homogeenne seotud kiht.
English: NB 1 Low pressure means less than ambient atmospheric pressure. NB 2
Estonian: Plasmapihustus on kas madalrõhu-plasma pihustus või ülikiire plasma pihustus.
Latvian: Liels ātrums ir gāzes ātrums sprauslas izejā, kas pie 293 K (20 °C) temperatūras un pie spiediena 0,1 MPa pārsniedz 750 m/s.
Lithuanian: Didelis greitis reiškia, kad iš prožektoriaus tūtos išeinančių dujų greitis esant 293 K (20 °C) temperatūrai ir 0,1 MPa slėgiui yra didesnis kaip 750 m/s.
English: High velocity refers to nozzle-exit gas velocity exceeding 750 m/s calculated at 293 K (20 °C) at 0,1 MPa. e. Slurry Deposition is a surface modification coating or overlay coating process wherein a metallic or ceramic powder with an organic binder is suspended in a liquid and is applied to a substrate by either spraying, dipping or painting, subsequent air or oven drying, and heat treatment to obtain the desired coating.
Estonian: Madal rõhk tähendab siin ümbritsevast rõhust madalamat rõhku.
Latvian: e. pārklāšana uzputinot ir virsmas pārveidošana ar pārklāšanu, kurā metālu vai keramikas pulveri ar organisku saistvielu suspendē šķidrumā un to uzklāj substrātam, uzsmidzinot, iemērcot, vai uzklājot ar otu, pēc tam žāvējot gaisā vai žāvētavā, un vēlamā pārklājuma iegūšanai veicot termisko apstrādi;
English: NB 1 The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vaporisation of non-metallic coating materials. NB 2
Estonian: Ülikiire tähendab düüsist väljuva gaasi kiirust, mis on suurem kui 750 m/s, arvutatuna 293 K (20 °C) juures rõhul 0,1 MPa.
English: Low-energy ion beams (less than 5 keV) can be used to activate the deposition. g. Ion Implantation is a surface modification coating process in which the element to be alloyed is ionised, accelerated through a potential gradient and implanted into the surface region of the substrate.
Estonian: e. Mudasadestus on üks pinna muundamise või katmise menetlus, milles orgaanilise sideainega vedelikus suspenseeritud metalli- või keraamikapulber kantakse põhimikule kas pihustamise, sukeldamise või pintsli abil, millele järgneb õhus või ahjus kuivatamine ning termotöötlemine, saavutamaks soovitud pinnakatet.
English: This includes processes in which ion implantation is performed simultaneously with electron beam physical vapour deposition or sputter deposition. CATEGORY 3 ELECTRONICS
Estonian: f. Atomisatsioonsadestus on pinnakatmismenetlus, mis põhineb impulsi ülekande nähtusel, milles positiivsed ioonid kiirendatakse elektriväljas märklaua (kattev aine) pinna suunas.
English: The control status of integrated circuits described in 3A001.a.3. to 3A001.a.9. or 3A001.a.12. which are unalterably programmed or designed for a specific function for another equipment is determined by the control status of the other equipment. NB:
Estonian: Sadestumise aktiveerimiseks kasutatakse madalaenergeetilisi (alla 5 keV) ioonkiiri. g. Ioonlegeerimine on üks pinna muundamis- või katmismenetlus, milles sulandatav element ioniseeritakse, kiirendatakse potentsiaali gradiendi abil ning implanteeritakse põhimiku pinna piirkonnas.
English: Electronic components and specially designed components therefor, as follows: a. General purpose integrated circuits, as follows:
Estonian: Kui tootja või loataotleja ei suuda kindlaks määrata nende muude seadmete kontrolli alla kuulumist, määratakse nende integraallülituste kontrolli alla kuulumine punktides 3A001.a.3–3A001.a.9 ja 3A001.a.12.
English: b. A dose rate upset of 5 × 106 Gy (silicon)/s or higher; or c. A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 1013 n/cm2 or higher on silicon, or its equivalent for other materials; Note:
Estonian: b. doosikiirus, mille väärtus on 5 × 106 Gy (räni)/s või rohkem, või
English: Electronic vacuum tubes and cathodes, as follows: Note 1:
Estonian: elektroonilised vaakumlambid ja katoodid:
Latvian: elektroniskas vakuumlampas un katodi:
English: f. Rated for operation at frequencies exceeding 43,5 GHz and with an average output power greater than 0,1 nW; Note 1: Not used. Note 2: The control status of the MMIC whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.2.a. to 3A001.b.2.f., is determined by the lowest average output power control threshold. Note 3:
Estonian: f. määratud toimima sagedustel, mis ületavad 43,5 GHz ja keskmise väljundvõimsusega üle 0,1 nW,
English: For the purpose of 3A002.d., frequency synthesised signal generators include arbitrary waveform and function generators. Note 2.:
Estonian: Või, ülevõendamise kasutamisel, on maksimaalne väljundsagedus proportsionaalselt madalam.
English: Thus, a 1 GSample/s arbitrary waveform has a direct output capability of 500 MHz. Or, when oversampling is used, the maximum direct output capability is proportionately lower. 2.
Estonian: Punkti 3A002.d.1 tähenduses määratletakse ‘impulsi kestust’ ajavahemikuna, mis jääb impulsi esifrondi, mis saavutab 90 % maksimumist, ja impulsi tagafrondi vahele, mis saavutab 10 % maksimumist.
English: For the purposes of 3A002.d.1., ‘pulse duration’ is defined as the time interval between the leading edge of the pulse achieving 90 % of the peak and the trailing edge of the pulse achieving 10 % of the peak. e. Network analysers having either of the following:
Estonian: e. võrguanalüsaatorid, millel on üks järgmistest omadustest:
English: b. Long-term stability less (better) than 1 × 10–11/month; and c. Total power consumption of less than 1 W.
Estonian: c. tarbimisvõimsus vähem kui 1 W.
English: K = 1,7 × 103 × V2,65 × Q V is the peak electron energy in million electron volts.
Estonian: Kui kiirendi impulsi kestus on 1 s või vähem, siis Q tähistab kogu kiirendatud laengut kulonites.
English: If the accelerator beam pulse duration is less than or equal to 1 μs, then Q is the total accelerated charge in Coulombs. If the accelerator beam pulse duration is greater than 1 μs, then Q is the maximum accelerated charge in 1 μs.
Estonian: Kui aga kiirendi impulsi kestus on pikem kui 1 μs, siis tähistab Q 1 μs jooksul kiirendatud maksimaalset laengut.
English: “Technology” according to the General Technology Note for the “use” of equipment or “software” specified in 3A001.a.1. or 2., 3A101, 3A102 or 3D101. 3E102 “Technology” according to the General Technology Note for the “development” of “software” specified in 3D101. 3E201
Estonian: arvuteid, vastavaid seadmeid ja „tarkvara”, mis täidavad telekommunikatsiooni- või „kohtvõrgu” ülesandeid, tuleb hinnata samuti 5. kategooria 1. osa („Telekommunikatsioon”) jõudlusparameetrite järgi.
English: “Technology” according to the General Technology Note for the “use” of equipment specified in 3A001.e.2., 3A001.e.3., 3A001.g., 3A201, 3A225 to 3A233. CATEGORY 4 COMPUTERS
Estonian: Märkus 2:
English: Systems, Equipment and Components 4A001 Electronic computers and related equipment, having any of the following and “electronic assemblies” and specially designed components therefor: NB: SEE ALSO 4A101. a. Specially designed to have any of the following:
Estonian: a. mis on spetsiaalselt konstrueeritud nii, et neil oleks mis tahes järgmine omadus:
English: Note 1: 4A003 includes the following:
Estonian: „Digitaalarvutite” või telekommunikatsiooniseadmete kontrolli alla kuulumise kohta vaata 5. kategooria 1. osa („Telekommunikatsioon”). c.
English: ‘Vector processors’; Array processors;
Estonian: „Tehnoloogia”„digitaalarvutite” või seotud seadmete jaoks määratakse kindlaks punktis 4E.
English: Logic processors; Equipment designed for “image enhancement”;
Estonian: punkti 4A003.a tähenduses ei käsitleta „digitaalarvuteid” ja nendega seotud seadmeid kavandatuna või kohandatuna „tõrketaluvusega” süsteemide jaoks, kui nendes on kasutatud järgmist: 1.
English: The control status of “signal processing” or “image enhancement” equipment specially designed for other equipment with functions limited to those required for the other equipment is determined by the control status of the other equipment even if it exceeds the “principal element” criterion. NB 2:
Estonian: c. „elektroonikasõlmed”, mis on spetsiaalselt konstrueeritud või kohandatud, et suurendada jõudlust protsessorite liitmise teel nii, et selline ühendatud „korrigeeritud maksimaalne jõudlus” ületab punktis 4A003.b nimetatud piiri;
English: For the control status of “digital computers” or related equipment for telecommunications equipment, see Category 5, Part 1 (Telecommunications). c.
Estonian: Märkus 1: punkt 4A003.c hõlmab üksnes „elektroonikasõlmi” ja programmeeritavaid omavahelisi ühendusi, mis ei ületa punktis 4A003.b esitatud piire, kui neid toimetatakse kohale mitteühendatud „elektroonikasõlmedena”.
English: The “technology” for the “digital computers” and related equipment is determined by 4E. a. Designed or modified for “fault tolerance”;
Estonian: See ei hõlma „elektroonikasõlmi”, mille rakendamine loomupäraselt oma konstruktsiooni tõttu punktides 4A003.e nimetatud seadmete vastava osana on piiratud.
English: b. “Digital computers” having an “Adjusted Peak Performance” (“APP”) exceeding 1,5 Weighted TeraFLOPS (WT); c. “Electronic assemblies” specially designed or modified for enhancing performance by aggregation of processors so that the “APP” of the aggregation exceeds the limit specified in 4A003.b.; Note 1: 4A003.c. controls only “electronic assemblies” and programmable interconnections not exceeding the limit specified in 4A003.b. when shipped as unintegrated “electronic assemblies”. It does not control “electronic assemblies” inherently limited by nature of their design for use as related equipment specified in 4A003.e. Note 2: 4A003.c. does not control “electronic assemblies” specially designed for a product or family of products whose maximum configuration does not exceed the limit specified in 4A003.b. d. Not used; e. Equipment performing analogue-to-digital conversions exceeding the limits specified in 3A001.a.5.; f. Not used; g. Equipment specially designed for aggregating the performance of “digital computers” by providing external interconnections which allows communications at unidirectional data rates exceeding 2,0 Gbyte/s per link. Note: 4A003.g. does not control internal interconnection equipment (e.g. backplanes, buses), passive interconnection equipment, “network access controllers” or “communications channel controllers”. 4A004 Computers as follows and specially designed related equipment, “electronic assemblies” and components therefor: a. “Systolic array computers”; b. “Neural computers”; c. “Optical computers”. 4A101 Analogue computers, “digital computers” or digital differential analysers, other than those specified in 4A001.a.1., which are ruggedised and designed or modified for use in space launch vehicles specified in 9A004 or sounding rockets specified in 9A104.
Estonian: Analoogarvutid, „digitaalarvutid” või digitaalsed diferentsiaalanalüsaatorid, muud kui punktis 4A001.a.1 nimetatud, mis on karmide tingimuste jaoks ning spetsiaalselt ette nähtud või kohandatud kasutamiseks punktis 9A004 nimetatud kanderakettides või punktis 9A104 nimetatud sondrakettides.
English: See also Category 5, Part 2 for equipment, components, and “software” performing or incorporating “information security” functions. Note 2: “Digital computers”, related equipment or “software”, when essential for the operation and support of telecommunications equipment described in this Category, are regarded as specially designed components, provided they are the standard models customarily supplied by the manufacturer. This includes operation, administration, maintenance, engineering or billing computer systems. 5A1 Systems, Equipment and Components 5A001
Estonian: Järgmised telekommunikatsioonisüsteemid, -seadmed, -komponendid ja lisaseadmed:
English: Telecommunications systems, equipment, components and accessories as follows: a. Any type of telecommunications equipment having any of the following characteristics, functions or features:
Estonian: a. telekommunikatsiooniseadmed, millel on mis tahes järgmine omadus, funktsioon või eripära:
English: Note 1: The control status of acoustic projectors, including transducers, specially designed for other equipment is determined by the control status of the other equipment. Note 2:
Estonian: sagedustel alla 10 kHz töötavate seadmete pidevalt kiiratav ‘helivõimsuse tihedus’ ületab 0,001 mW/mm2/Hz, või
Latvian: c. akustiskie projektori, ieskaitot devējus, kuros ir pjezoelektriski, magnetostriktīvi, elektrostriktīvi, elektrodinamiski vai hidrauliski darba elementi, kas darbojas individuāli vai paredzēti savienojumiem; kam piemīt kādi no šiem raksturlielumiem:
English: a.1.c. does not control electronic sources which direct the sound vertically only, or mechanical (e.g. air gun or vapour-shock gun) or chemical (e.g. explosive) sources. 1. An instantaneous radiated ‘acoustic power density’ exceeding 0,01 mW/mm2/Hz for devices operating at frequencies below 10 kHz; 2. A continuously radiated ‘acoustic power density’ exceeding 0,001 mW/mm2/Hz for devices operating at frequencies below 10 kHz; or
Estonian: Tehniline märkus
English: Technical Note: ‘Acoustic power density’ is obtained by dividing the output acoustic power by the product of the area of the radiating surface and the frequency of operation.
Estonian: ‘Helivõimsuse tihedus’ saadakse akustilise väljundvõimsuse väärtuse jagamisel kiirgava pinna pindala ja töösageduse väärtuse korrutisega.
English: Note 1: 6A001.b. does not control depth sounders limited to any of the following: a. Measuring the depth of water; b. Measuring the distance of submerged or buried objects; or c. Fish finding. Note 2: 6A001.b. does not control equipment specially designed for installation on surface vessels. c. Not used. 6A002 Optical sensors or equipment and components therefor, as follows: NB: SEE ALSO 6A102. a. Optical detectors as follows: 1. “Space-qualified” solid-state detectors as follows: Note:
Estonian: koste väärtus on lainepikkuste piirkonnas üle 400 nm väiksem kui 0,1 % tippkoste väärtusest;
English: For the purpose of 6A002.a.1., solid-state detectors include “focal plane arrays”. a. “Space-qualified” solid-state detectors having all of the following: 1. A peak response in the wavelength range exceeding 10 nm but not exceeding 300 nm; and 2. A response of less than 0,1 % relative to the peak response at a wavelength exceeding 400 nm; b. “Space-qualified” solid-state detectors having all of the following:
Estonian: b. „kosmosekindlad” tahkisdetektorid, millel on kõik järgmised omadused:
English: Segments or assemblies of mirrors designed to be assembled in space into an optical system with a collecting aperture equivalent to or larger than a single optic 1 m in diameter; 4. Components manufactured from “composite” materials having a coefficient of linear thermal expansion equal to or less than 5 × 10–6 in any coordinate direction;
Estonian: seadmed, mis on spetsiaalselt ette nähtud häälestuse hoidmiseks faseeritud maatriksile või segmentpeeglite süsteemidele, mis koosnevad peeglitest, mille segmendi diameeter või peatelje pikkus on 1 m või rohkem;
English: Equipment specially designed to maintain the surface figure or orientation of the “space-qualified” components specified in 6A004.c.1. or 6A004.c.3.; 2. Equipment having steering, tracking, stabilisation or resonator alignment bandwidths equal to or more than 100 Hz and an accuracy of 10 μrad (microradians) or less; 3. Gimbals having all of the following: a. A maximum slew exceeding 5 °; b. A bandwidth of 100 Hz or more; c. Angular pointing errors of 200 μrad (microradians) or less; and d. Having any of the following:
Estonian: optilise ava suurim mõõde on üle 400 mm;
English: Specially designed to maintain the alignment of phased array or phased segment mirror systems consisting of mirrors with a segment diameter or major axis length of 1 m or more; e. ‘Aspheric optical elements’ having all of the following:
Estonian: suurim optilise ava mõõde on väiksem kui 1 m ja fookuskauguse suhe ava suurusesse on võrdne või suurem kui 4,5: 1;
English: Surface roughness less than 1 nm (rms) for sampling lengths equal to or greater than 1 mm; and 3. Coefficient of linear thermal expansion’s absolute magnitude less than 3 × 10–6/K at 25 °C.
Estonian: suurim optilise ava mõõde on võrdne või suurem kui 1 m ja fookuskauguse suhe ava suurusesse on võrdne või suurem kui 7 : 1;
English: Manufacturers are not required to measure the surface roughness listed in 6A004.e.2. unless the optical element was designed or manufactured with the intent to meet, or exceed, the control parameter. Note 6A004.e. does not control ‘aspheric optical elements’ having any of the following: a.
Estonian: valmistatud boorsilikaatklaasist, mille lineaarse soojuspaisumise tegur on suurem kui 2,5 × 10–6/K 25 °C, või
English: Largest optical-aperture dimension equal to or greater than 1 m and focal length to aperture ratio equal to or greater than 7:1; c.
Estonian: on röntgenoptiline element, millel on sisepeegli omadused (nt toru-tüüpi peeglid).
English: Fabricated from borosilicate glass having a coefficient of linear thermal expansion greater than 2,5 × 10–6 /K at 25 °C; or e. An x-ray optical element having inner mirror capabilities (e.g. tube-type mirrors). NB:
Estonian: ‘Mittesfääriliste optiliste elementide’ kohta, mis on spetsiaalselt kavandatud litograafiaseadmetele, vaata punkti 3B001.
English: a. “Pulse duration” of less than 1 ns and any of the following: 1. Output “peak power” exceeding 5 GW per pulse; 2. “Average output power” exceeding 10 W; or
Estonian: b. „keskmine väljundvõimsus” üle 20 W ja kavandatud impulsside maksimaalne kordussagedus 1 kHz või väiksem;
English: b. “Average output power” exceeding 20 W limited by design to a maximum pulse repetition frequency less than or equal to 1 kHz; c. ‘Wall-plug efficiency’ exceeding 12 %, “average output power” exceeding 100 W and capable of operating at a pulse repetition frequency greater than 1 kHz;
Estonian: a. „tippvõimsus” üle 1 MW;
English: d. “Average output power” exceeding 150 W and capable of operating at a pulse repetition frequency greater than 1 kHz; or e. Output energy exceeding 2 J per pulse; or 2. Multiple transverse mode output and any of the following: a. “Peak power” exceeding 400 MW; b. ‘Wall-plug efficiency’ exceeding 18 % and “average output power” exceeding 500 W; c. “Average output power” exceeding 2 kW; or d. Output energy exceeding 4 J per pulse; or c. “Pulse duration” exceeding 1 μs and any of the following: 1. Single transverse mode output and any of the following: a. “Peak power” exceeding 500 kW;
Estonian: b. ‘pistikupesatõhusus’ üle 18 % ja „keskmine väljundvõimsus” üle 500 W või
English: b. ‘Wall-plug efficiency’ exceeding 12 % and “average output power” exceeding 100 W; or c. “Average output power” exceeding 150 W; or 2. Multiple transverse mode output and any of the following: a. “Peak power” exceeding 1 MW; b. ‘Wall-plug efficiency’ exceeding 18 % and “average output power” exceeding 500 W; or c. “Average output power” exceeding 2 kW;
Estonian: c. „keskmine väljundvõimsus” üle 2 kW;