FrancophonIA/DGT-Translation_Memory huggingface dataset:
English: "Multispectral imaging sensors" (6) are capable of simultaneous or serial acquisition of imaging data from two or more discrete spectral bands. Sensors having more than twenty discrete spectral bands are sometimes referred to as hyperspectral imaging sensors. "Natural uranium" (0) means uranium containing the mixtures of isotopes occurring in nature. "Network access controller" (4) means a physical interface to a distributed switching network. It uses a common medium which operates throughout at the same "digital transfer rate" using arbitration (e.g., token or carrier sense) for transmission. Independently from any other, it selects data packets or data groups (e.g., IEEE 802) addressed to it.
Portuguese: "Laser de transferência" (6) — "Laser" excitado por uma transferência de energia obtida pela colisão de átomos ou de moléculas que não produzem efeito laser com átomos ou moléculas que produzem esse efeito.
English: It is an assembly that can be integrated into computer or telecommunications equipment to provide communications access. "Neural computer" (4) means a computational device designed or modified to mimic the behaviour of a neuron or a collection of neurons, i.e., a computational device which is distinguished by its hardware capability to modulate the weights and numbers of the interconnections of a multiplicity of computational components based on previous data.
Portuguese: "Linearidade" (2) — Característica que é geralmente medida em termos de não-linearidade e que é definida como o desvio máximo, positivo ou negativo, da característica real (média das leituras no sentido ascendente e descendente da escala) em relação a uma linha recta situada de forma a que se igualem e reduzam ao mínimo os desvios máximos.
English: "Numerical control" (2) means the automatic control of a process performed by a device that makes use of numeric data usually introduced as the operation is in progress (ref. ISO 2382). "Object code" (9) means an equipment executable form of a convenient expression of one or more processes ("source code" (source language)) which has been converted by programming system. "Optical amplification" (5), in optical communications, means an amplification technique that introduces a gain of optical signals that have been generated by a separate optical source, without conversion to electrical signals, i.e., using semiconductor optical amplifiers, optical fibre luminescent amplifiers. "Optical computer" (4) means a computer designed or modified to use light to represent data and whose computational logic elements are based on directly coupled optical devices. "Optical integrated circuit" (3) means a "monolithic integrated circuit" or a "hybrid integrated circuit", containing one or more parts designed to function as a photosensor or photoemitter or to perform (an) optical or (an) electro-optical function(s). "Optical switching" (5) means the routing of or switching of signals in optical form without conversion to electrical signals. "Overall current density" (3) means the total number of ampere-turns in the coil (i.e., the sum of the number of turns multiplied by the maximum current carried by each turn) divided by the total cross-section of the coil (comprising the superconducting filaments, the metallic matrix in which the superconducting filaments are embedded, the encapsulating material, any cooling channels, etc.). "Participating state" (7 9) is a state participating in the Wassenaar Arrangement. (See www.wassenaar.org)
Portuguese: "Matriz" (1 2 8 9) — Fase praticamente contínua que preenche o espaço entre partículas, cristais capilares ou fibras.
English: "Power management" (7) means changing the transmitted power of the altimeter signal so that received power at the "aircraft" altitude is always at the minimum necessary to determine the altitude. "Pressure transducers" (2) are devices that convert pressure measurements into an electrical signal.
Portuguese: N.B.: Nesta definição não se inclui uma pilha de elementos detectores simples ou detectores de dois, três ou quatro elementos, desde que o atraso e a integração não sejam efectuados dentro do elemento.
Swedish: "Optisk avkännargrupp för flygplansstyrning" (Flight control optical sensor array) (7) är ett nät av fördelade optiska sensorer med "laser"-strålar som skall åstadkomma realtidflygplansstyrningsdata för bearbetning ombord.
English: "Radar spread spectrum" (6) means any modulation technique for spreading energy originating from a signal with a relatively narrow frequency band, over a much wider band of frequencies, by using random or pseudo-random coding. "Real-time bandwidth" (2 3) for "dynamic signal analysers" is the widest frequency range which the analyser can output to display or mass storage without causing any discontinuity in the analysis of the input data. For analysers with more than one channel, the channel configuration yielding the widest "real-time bandwidth" shall be used to make the calculation.
Portuguese: "Processamento de fluxos múltiplos de dados" (4) — Técnica de 'microprogramas' ou de arquitectura do equipamento que permite o processamento simultâneo de duas ou mais sequências de dados sob o controlo de uma ou mais sequências de instruções, por meio de:
English: "Real time processing" (6 7) means the processing of data by a computer system providing a required level of service, as a function of available resources, within a guaranteed response time, regardless of the load of the system, when stimulated by an external event. "Required" (GTN 1-9), as applied to "technology" or "software", refers to only that portion of "technology" or "software" which is peculiarly responsible for achieving or extending the controlled performance levels, characteristics or functions. Such "required""technology" or "software" may be shared by different goods. "Resolution" (2) means the least increment of a measuring device; on digital instruments, the least significant bit (ref. ANSI B-89.1.12). "Robot" (2 8) means a manipulation mechanism, which may be of the continuous path or of the point-to-point variety, may use sensors, and has all the following characteristics:
Portuguese: Arquitecturas de múltiplos dados com instrução única (SIMD) como processadores vectoriais ou matriciais;
English: "Systolic array computer" (4) means a computer where the flow and modification of the data is dynamically controllable at the logic gate level by the user. "Tape" (1) is a material constructed of interlaced or unidirectional "monofilaments", 'strands', "rovings", "tows", or "yarns", etc., usually preimpregnated with resin.
Portuguese: "SHPL" — Sigla equivalente a "laser de superalta potência".
English: This information takes the form of 'technical data' or 'technical assistance'. N.B. 1:'Technical assistance' may take forms such as instructions, skills, training, working knowledge and consulting services and may involve the transfer of 'technical data'. N.B. 2:'Technical data' may take forms such as blueprints, plans, diagrams, models, formulae, tables, engineering designs and specifications, manuals and instructions written or recorded on other media or devices such as disk, tape, read-only memories. "Tilting spindle" (2) means a tool-holding spindle which alters, during the machining process, the angular position of its centre line with respect to any other axis.
Portuguese: "Sintetizador de frequência" (3) — Qualquer tipo de fonte de frequências ou de gerador de sinais, independentemente da técnica efectivamente utilizada, que forneça, a partir de uma ou mais saídas, diversas frequências de saída simultâneas ou alternadas, controladas, derivadas ou regidas por um número reduzido de frequências-padrão (ou de oscilador principal).
English: Stainless steel of the 300 series with low sulphur content and with an austenitic ASTM (or equivalent standard) grain size number of 5 or greater; or 2. Equivalent materials which are both cryogenic and H2-compatible; and d. With internal diameters of 1 m or greater and effective lengths of 5 m or greater. 1B229 Water-hydrogen sulphide exchange tray columns and 'internal contactors', as follows: N.B.: For columns which are specially designed or prepared for the production of heavy water see 0B004. a. Water-hydrogen sulphide exchange tray columns, having all of the following characteristics: 1. Can operate at pressures of 2 MPa or greater; 2. Constructed of carbon steel having an austenitic ASTM (or equivalent standard) grain size number of 5 or greater; and 3. With a diameter of 1,8 m or greater; b. 'Internal contactors' for the water-hydrogen sulphide exchange tray columns specified in 1B229.a. Technical Note: 'Internal contactors' of the columns are segmented trays which have an effective assembled diameter of 1,8 m or greater, are designed to facilitate countercurrent contacting and are constructed of stainless steels with a carbon content of 0,03 % or less. These may be sieve trays, valve trays, bubble cap trays, or turbogrid trays. 1B230
Portuguese: Quer em aço inoxidável austenítico de grão fino da série 300 com baixo teor de enxofre e com uma granulometria ASTM (ou equivalente) igual ou superior a 5; ou
English: Pumps capable of circulating solutions of concentrated or dilute potassium amide catalyst in liquid ammonia (KNH2/NH3), having all of the following characteristics: a. Airtight (i.e., hermetically sealed);
Portuguese: Quer em materiais equivalentes que sejam simultaneamente criogénicos e compatíveis com o H2; e
English: Xanthomonas campestris pv. citri including strains referred to as Xanthomonas campestris pv. citri types A,B,C,D,E or otherwise classified as Xanthomonas citri, Xanthomonas campestris pv. aurantifolia or Xanthomonas campestris pv. citrumelo; 3. Xanthomonas oryzae pv. Oryzae (Pseudomonas campestris pv.
Portuguese: Xanthomonas campestri pv. citri (incluindo as estirpes designadas por Xanthomonas campestri pv. citri tipos A, B, C, D e E ou de qualquer forma classificadas Xanthomonas citri), Xanthomonas campestri pv. aurantifolia ou Xanthomonas campestri pv. citrumelo;
English: Oryzae); 4. Clavibacter michiganensis subsp.
Portuguese: Xanthomonas oryzae pv.
Slovak: Xanthomonas oryzae pv.
English: Sepedonicus (Corynebacterium michiganensis subsp. Sepedonicum or Corynebacterium Sepedonicum);
Portuguese: Oryzae (Pseudomonas campestris pv.
English: Ralstonia solanacearum Races 2 and 3 (Pseudomonas solanacearum Races 2 and 3 or Burkholderia solanacearum Races 2 and 3); c. Fungi, whether natural, enhanced or modified, either in the form of "isolated live cultures" or as material which has been deliberately inoculated or contaminated with such cultures, as follows:
Portuguese: Oryzae);
Slovak: Sepedonicus (subsp.
English: Cochliobolus miyabeanus (Helminthosporium oryzae); 3. Microcyclus ulei (syn. Dothidella ulei);
Portuguese: Sepedonicus (Corynebacterium michiganensis subsp.
English: "Technology" for the "development" or "production" of polybenzothiazoles or polybenzoxazoles; b. "Technology" for the "development" or "production" of fluoroelastomer compounds containing at least one vinylether monomer;
Portuguese: "Tecnologia" para o "desenvolvimento" ou "produção" de polibenzotiazolos ou de polibenzoxazolos;
English: "Technology" for the design or "production" of the following base materials or non-"composite" ceramic materials: 1. Base materials having all of the following characteristics: a. Any of the following compositions:
Portuguese: "Tecnologia" para o "desenvolvimento" ou "produção" de compostos fluoroelastómeros com pelo menos um monómero de viniléter;
English: Single or complex oxides of zirconium and complex oxides of silicon or aluminium; 2. Single nitrides of boron (cubic crystalline forms); 3. Single or complex carbides of silicon or boron; or
Portuguese: "Tecnologia" para a concepção ou "produção" dos materiais de base ou dos materiais cerâmicos não "compósitos" a seguir enumerados:
English: Single or complex nitrides of silicon; b. Total metallic impurities, excluding intentional additions, of less than:
Portuguese: Materiais de base com todas as seguintes características:
English: 1000 ppm for single oxides or carbides; or 2. 5000 ppm for complex compounds or single nitrides; and
Portuguese: Qualquer das seguintes composições:
English: Being any of the following: 1. Zirconia with an average particle size equal to or less than 1 μm and no more than 10 % of the particles larger than 5 μm;
Portuguese: Óxidos de zircónio simples ou complexos e óxidos de silício ou de alumínio complexos;
English: Note: 1E104 includes "technology" for the composition of precursor gases, flow-rates and process control schedules and parameters. 1E201
Portuguese: "Tecnologia", na acepção da Nota Geral sobre Tecnologia, para a "utilização" dos bens referidos em 1A002, 1A202, 1A225 a 1A227, 1B201, 1B225 a 1B233, 1C002.b.
English: Rotary axes need not rotate over 360°. A rotary axis can be driven by a linear device (e.g., a screw or a rack-and-pinion).
Portuguese: Os eixos de rotação não têm necessariamente de rodar a 360° e podem ser accionados por dispositivos lineares, (por exemplo, um parafuso ou um sistema de pinhão e cremalheira).
English: For the purposes of 2B, the number of axes which can be co-ordinated simultaneously for "contouring control" is the number of axes along or around which, during processing of the workpiece, simultaneous and interrelated motions are performed between the workpiece and a tool. This does not include any additional axes along or around which other relative movement within the machine are performed such as:
Portuguese: Para efeitos do ponto 2B, o número de eixos que podem ser coordenados em simultâneo para o "controlo de contorno" é o número de eixos ao longo ou em torno dos quais, durante o processamento da peça, são executados movimentos simultâneos e interrelacionados entre a peça e a ferramenta, e que não inclui quaisquer eixos adicionais ao longo ou em torno dos quais sejam executados outros movimentos relativos dentro da máquina, tais como:
English: Physical Vapour Deposition (PVD): Cathodic Arc Discharge "Superalloys"
Portuguese: Deposição em fase vapor por processo físico (PVD): Descarga por arco catódico
English: Alloyed aluminides (2) MCrAlX (5)
Portuguese: Silicietos ligados
English: Polymers (11) and Organic"matrix""composites" Borides Carbides Nitrides
Portuguese: Aluminetos ligados (2)
English: Pack cementation (see A above for out-of-pack cementation) (10) Carbon-carbon, Ceramic and Metal "matrix""composites" Silicides Carbides Mixtures thereof (4)
Portuguese: Polímeros (11) e materiais "compósitos" de "matriz" orgânica
English: Titanium alloys (13) Silicides Aluminides
Portuguese: Boretos
English: Alloyed aluminides (2) Refractory metals and alloys (8) Silicides Oxides
Portuguese: Carbonetos
English: Plasma spraying "Superalloys" MCrAlX (5)
Portuguese: Nitretos
English: Modified zirconia (12) Mixtures thereof (4)
Portuguese: Carbono diamante (17)
English: Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al
Portuguese: Cementação em caixa (ver A para a cementação fora de caixa) (10)
English: Abradable Al-Si-Polyester Alloyed aluminides (2) Aluminium alloys (6)
Portuguese: Materiais "compósitos" carbono–carbono, cerâmicos e de "matriz" metálica
English: Modified zirconia (12) Silicides
Portuguese: Carbonetos
English: Titanium alloys (13) Carbides
Portuguese: Metais e ligas refractários (8)
English: Rated for operation at frequencies exceeding 37,5 GHz up to and including 43,5 GHz and having an average output power greater than 1W (30 dBm); or e. Rated for operation at frequencies exceeding 43,5 GHz. Note: The control status of a transistor whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.3.a. to 3A001b.3.e., is determined by the lowest average output power control threshold. 4. Microwave solid state amplifiers and microwave assemblies/modules containing microwave amplifiers having any of the following: a. Rated for operation at frequencies exceeding 3,2 GHz up to and including 6 GHz and with an average output power greater than 60W (47,8 dBm) with a "fractional bandwidth" greater than 15 %; b. Rated for operation at frequencies exceeding 6 GHz up to and including 31,8 GHz and with an average output power greater than 15W (42 dBm) with a "fractional bandwidth" greater than 10 %; c. Rated for operation at frequencies exceeding 31,8 GHz up to and including 37,5 GHz;
Portuguese: Classificados para funcionamento a frequências superiores a 37,5 GHz até 43,5 GHz inclusive, e com uma potência de saída média superior 1 W (30 dBm); ou
English: GHz should be used as the lowest operating frequency (fGHz) in the formula in 3A001.b.4.f.3., for amplifiers that have a rated operating range extending downward to 3.2 GHz and below [d≤ 15 cm*GHz/3.2 GHz]. N.B.: MMIC power amplifiers should be evaluated against the criteria in 3A001.b.2. Note 1: 3A001.b.4. does not control broadcast satellite equipment designed or rated to operate in the frequency range of 40,5 to 42,5 GHz.
Portuguese: Nos amplificadores classificados com uma gama de funcionamento que desça até 3,2 GHz e abaixo [d=15cm*GHz/3,2 GHz], deve utilizar-se a frequência 3,2 GHz como frequência de funcionamento mais baixa (fGHz) na fórmula contida em 3A001.b.4.f.3.
English: Note 2: The control status of an item whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.4.a. to 3A001.b.4.e., is determined by the lowest average output power control threshold. 5. Electronically or magnetically tunable band-pass or band-stop filters having more than 5 tunable resonators capable of tuning across a 1,5:1 frequency band (fmax/fmin) in less than 10 μs having any of the following:
Portuguese: N.B.: Os amplificadores de potência com MMIC devem ser avaliados segundo os critérios enunciados em 3A001.b.2.
English: All resists designed for use with X-rays, with a sensitivity of 2,5 mJ/mm2 or better; d. All resists optimised for surface imaging technologies, including 'silylated' resists.
Portuguese: Todas as resinas fotossensíveis para utilização com raios X com uma sensibilidade igual ou melhor que 2,5 mJ/mm2;
English: Technical Note: 'Silylation' techniques are defined as processes incorporating oxidation of the resist surface to enhance performance for both wet and dry developing. 3C003
Portuguese: Todas as resinas fotossensíveis optimizadas para as tecnologias de imagem em superfície, incluindo resinas fotossensíveis "sililadas".
English: Organo-metallic compounds of aluminium, gallium or indium having a purity (metal basis) better than 99,999 %; b. Organo-arsenic, organo-antimony and organo-phosphorus compounds having a purity (inorganic element basis) better than 99,999 %.
Portuguese: As técnicas de "sililação" definem-se como sendo processos que incluem a oxidação da superfície da resina para melhorar o seu comportamento na revelação quer a húmido quer a seco.
English: Note: 3C003 only controls compounds whose metallic, partly metallic or non-metallic element is directly linked to carbon in the organic part of the molecule. 3C004
Portuguese: 3C003 Compostos organo-inorgânicos:
English: Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note: 3C004 does not control hydrides containing 20 % molar or more of inert gases or hydrogen. 3D Software
Portuguese: Compostos organo-metálicos de alumínio, gálio ou índio, com um grau de pureza (no que respeita ao elemento metálico) superior a 99,999 %;
English: 3D001 "Software" specially designed for the "development" or "production" of equipment specified in 3A001.b. to 3A002.g. or 3B. 3D002 "Software" specially designed for the "use" of any of the following: a. Equipment specified in 3B001.a. to f.; or b. Equipment specified in 3B002. 3D003
Portuguese: Compostos orgânicos de arsénio, antimónio ou fósforo com um grau de pureza (no que respeita ao elemento inorgânico) superior a 99,999 %.
English: Physics-based simulation "software" specially designed for the "development" of lithographic, etching or deposition processes for translating masking patterns into specific topographical patterns in conductors, dielectrics or semiconductor materials. Technical Note:
Portuguese: Nota: 3C003 abrange apenas os compostos cujo elemento metálico, semimetálico ou não metálico está directamente ligado a átomos de carbono da parte orgânica da molécula.
English: 3D004 "Software" specially designed for the "development" of the equipment specified in 3A003.
Portuguese: Hidretos de fósforo, de arsénio ou de antimónio com um grau de pureza superior a 99,999 %, mesmo quando diluídos em gases inertes ou em hidrogénio.
English: 3D101 "Software" specially designed or modified for the "use" of equipment specified in 3A101.b.
Portuguese: Nota: 3C004 não abrange hidretos com 20 % molar ou mais de gases inertes ou de hidrogénio.
English: "Technology" according to the General Technology Note for the "development" or "production" of equipment or materials specified in 3A, 3B or 3C; Note 1: 3E001 does not control "technology" for the "production" of equipment or components controlled by 3A003.
Portuguese: "Suportes lógicos" especialmente concebidos para o "desenvolvimento" ou "produção" de equipamentos referidos em 3A001.b. a 3A002.g ou 3B.
English: Note 2: 3E001 does not control "technology" for the "development" or "production" of integrated circuits specified in 3A001.a.3. to 3A001.a.12., having all of the following: 1. Using "technology" of 0,5 μm or more, and 2.
Portuguese: 3D002 "Suportes lógicos" especialmente concebidos para a "utilização" de qualquer dos seguintes equipamentos:
English: Not incorporating 'multi-layer structures'. Technical Note:
Portuguese: Equipamentos referidos em 3B001.a. a f.; ou
English: "Technology" according to the General Technology Note other than that specified in 3E001 for the "development" or "production" of "microprocessor microcircuits", "microcomputer microcircuits" and microcontroller microcircuits having a "composite theoretical performance" ("CTP") of 530 million theoretical operations per second (Mtops) or more and an arithmetic logic unit with an access width of 32 bits or more. Note: Decontrol note 2 to 3E001 also applies to 3E002. 3E003
Portuguese: "Suportes lógicos" simulação com base nas leis da física especialmente concebidos para o "desenvolvimento" de processos litográficos, de erosão ou de deposição para a transposição de padrões de máscaras para padrões topográficos específicos em materiais condutores, dieléctricos ou semicondutores.
English: Other "technology" for the "development" or "production" of: a. Vacuum microelectronic devices;
Portuguese: Nota técnica:
English: Hetero-structure semiconductor devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices; Note: 3E003.b. does not control technology for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz. c. "Superconductive" electronic devices;
Portuguese: Pela expressão "com base nas leis da física" em 3D003 entende-se a utilização de cálculos para determinar sequências de fenómenos físicos de causa e efeito com base em propriedades físicas (por exemplo, temperatura, pressão, constantes de difusão e propriedades dos materiais semicondutores).
English: Substrates of films of diamond for electronic components; e. Substrates of silicon-on-insulator (SOI) for integrated circuits in which the insulator is silicon dioxide;
Portuguese: Nota: Bibliotecas, atributos de desenho ou dados associados à concepção de dispositivos de semicondutores ou circuitos integrados são considerados "tecnologia".
English: 3E101 "Technology" according to the General Technology Note for the "use" of equipment or "software" specified in 3A001.a.1. or 2., 3A101 or 3D101.
Portuguese: "Suportes lógicos" especialmente concebidos para o "desenvolvimento" dos equipamentos referidos em 3A003.