Before revision: Recently IBGe is used to deposit Ge epitaxial films on a Si or Ge substrate, followed by the MOVPE deposition of InGaP and InGaAs layers with no memory effect, to enable triple-junction solar cells and integration of III-V compounds with Silicon and Germanium .
After revision: Recently IBGe is used to deposit Ge epitaxial films on a Si or Ge substrate, followed by the MOVPE deposition of InGaP and InGaAs layers with no memory effect, to enable triple-junction solar cells and integration of III-V compounds with silicon and germanium .