Before revision: 266-267 The following equation must be satisfied for a semiconductor under carrier injection conditions, where n is the number of electrons, delta N is the excess carriers injected into the semiconductor and n0 is the equilibrium concentration of electrons in the semiconductor: The following relation must also be true, because for every electron injected a hole must also be created to keep a balance of charge: The assumption of low level injection can be made regarding an n-type semiconductor, which affects the equations in the following way: Therefore and .
After revision: 266-267 The followig equation must be satisfied for a semiconductor under carrier injection conditions, where n is the number of electrons, is the excess carriers injected into the semiconductor and is the equilibrium concentration of electrons in the semiconductor: The following relation must also be true, because for every electron injected a hole must also be created to keep a balance of charge: The assumption of low level injection can be made regarding an n-type semiconductor, which affects the equations in the following way: Therefore and .