Before revision: The MOSFET was invented by Mohamed M. Atalla and Dawon Kahng at Bell Telephone Laboratories in 1959, and the metal–oxide–semiconductor (MOS) integrated circuit (IC) chip was proposed soon after, but In 1957, Frosch and Derick were able to manufacture the first silicon dioxide field effect transistors at Bell Labs, the first transistors in which drain and source were adjacent at the surface.
After revision: In 1957, Frosch and Derick were able to manufacture the first silicon dioxide field effect transistors at Bell Labs, the first transistors in which drain and source were adjacent at the surface.