Before revision: 457-467 Logic gate use of multiple-emitter transistors was patented in 1961 in the UK and in the US in 1962.B.
After revision: cross section and symbol of a simple NPN bipolar transistorcross section and symbol of a multiple emitter NPN bipolar URL Bipolar-Junction(BJT) transistors457-467 Logic gate use of multiple-emitter transistors was patented in 1961 in the UK and in the US in 1962.B.