Before revision: Characterization of Topological Insulators The first step of topological insulators characterization takes place right after synthesis meaning without breaking the vacuum and moving sample to an atmosphere.
After revision: +Lattice mismatch of different substrates SubstrateBi2Se3 %DIF > Bi2Te3 %Sb2Te3 %graphene -40.6 -43.8 -42.3Si -7.3 -12.3 -9.7CaF2 -6.8 -11.9 -9.2GaAs -3.4 -8.7 -5.9CdS -0.2 -5.7 -2.8InP0.2 -5.3 -2.3BaF25.90.12.8CdTe10.74.67.8Al2O314.98.712.0SiO218.612.115.5Characterization of Topological Insulators The first step of topological insulators characterization takes place right after synthesis meaning without breaking the vacuum and moving sample to an atmosphere.