Before revision: MOS memory The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores in computer memory.
After revision: MOS memory In 1957, Frosch and Derick were able to manufacture the first silicon dioxide field effect transistors at Bell Labs