Before revision: Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films; Shenai-Khatkhate et al., Rohm and Haas Electronic Materials; Presentation at ACCGE-16, Montana, USA, July 11, 2005, and publication in Journal of Crystal Growth (2006) It has been demonstrated that the growth of high quality germanium films at temperatures as low as 350 °C can be achieved.MOVPE growth of homoepitaxial germanium, M. Bosi et al.
After revision: Shenai-Khatkhate et al., Rohm and Haas Electronic Materials; Presentation at ACCGE-16, Montana, USA, July 11, 2005, and publication in Journal of Crystal Growth (2006) It has been demonstrated that the growth of high quality germanium films at temperatures as low as 350 °C can be achieved.MOVPE growth of homoepitaxial germanium, M. Bosi et al.