Before revision: Surface passivation, the process by which a semiconductor surface is rendered inert, and does not change semiconductor properties as a result of interaction with air or other materials in contact with the surface or edge of the crystal, was first discovered by Carl Frosch and Lincoln Derrick at Bell Labs between 1955 and 1957.
After revision: Surface passivation, the process by which a semiconductor surface is rendered inert, and does not change semiconductor properties as a result of interaction with air or other materials in contact with the surface or edge of the crystal, was first discovered by Carl Frosch and Lincoln Derick at Bell Labs between 1955 and 1957.