Before revision: MOS memory cells 260px|Intel 1103, a 1970 metal-oxide-semiconductor (MOS) dynamic random-access memory (DRAM) chip The invention of the MOSFET (metal–oxide–semiconductor field-effect transistor), also known as the MOS transistor, by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, , the first transistors in which drain and source were adjacent at the surface.
After revision: MOS memory cells 260px|Intel 1103, a 1970 metal-oxide-semiconductor (MOS) dynamic random-access memory (DRAM) chip In 1957, Frosch and Derick were able to manufacture the first silicon dioxide field effect transistors at Bell Labs , the first transistors in which drain and source were adjacent at the surface.