Before revision: The reduction of the required annealing temperature can be achieved by different pretreatments such as: plasma activated bonding ultra high vacuum (UHV) surface activation by chemical-mechanical polishing (CMP) surface treatment to achieve chemical activation in: hydrolyzed tetraalkoxysilanes Si(OR)4 hydrolyzed tetramethoxysilane Si(OCH3)4 nitride acid HNO3 Furthermore, research has shown that a lower annealing temperature for hydrophobic surfaces is possible with wafer pre-treatment based on: As+ implantation B2H6 or Ar plasma treatment Si sputter deposition Examples This technique is usable for the fabrication of multi wafer micro structures, i.e.
After revision: surface activated bondingThe reduction of the required annealing temperature can be achieved by different pretreatments such as: plasma activated bonding ultra high vacuum (UHV) surface activation by chemical-mechanical polishing (CMP) surface treatment to achieve chemical activation in: hydrolyzed tetraalkoxysilanes Si(OR)4 hydrolyzed tetramethoxysilane Si(OCH3)4 nitride acid HNO3 Furthermore, research has shown that a lower annealing temperature for hydrophobic surfaces is possible with wafer pre-treatment based on: As+ implantation B2H6 or Ar plasma treatment Si sputter deposition Examples This technique is usable for the fabrication of multi wafer micro structures, i.e.