Before revision: Temperature Room temperature - 400 °C Advantages high bonding strength high temperature stability process compatibility to semiconductor technology feasibility at vacuum or different atmospheric gases Drawbacks high standards in surface geometry high standards in roughness Researches hybrids (simultaneous metal and SFB) bonding at T < 200 °C completely dry process including pre-conditioning /> M. M. R. Howlader, S. Suehara, H. Takagi, T. H. Kim, R. Maeda, and T. Suga, "Room temperature microfluidics packaging using sequential plasma activation process", IEEE Transactions of Advanced Packaging 29(3) (2006) 446-456
After revision: Temperature Room temperature - 400 °C Advantages high bonding strength high temperature stability process compatibility to semiconductor technology feasibility at vacuum or different atmospheric gases Drawbacks high standards in surface geometry high standards in roughness Researches hybrids (simultaneous metal and SFB) bonding at T < 200 °C completely dry process including pre-conditioning . M. M. R. Howlader, S. Suehara, H. Takagi, T. H. Kim, R. Maeda, and T. Suga, "Room temperature microfluidics packaging using sequential plasma activation process", IEEE Transactions of Advanced Packaging 29(3) (2006) 446-456