Before revision: The first field-effect transistor was designed and prepared by Mohamed Atalla and Dawon Kahng at Bell Labs using a metal–oxide–semiconductor: the MOSFET (metal–oxide–semiconductor field-effect transistor).
After revision: insulated-gateThe first field-effect transistor was designed and prepared by Mohamed Atalla and Dawon Kahng at Bell Labs using a metal–oxide–semiconductor: the MOSFET (metal–oxide–semiconductor field-effect transistor).