Before revision: SiGe, InP, GaN or Sb): Active: BJT or FET transistor based MMICs, RFICs or optical ICs Passive: PIN diode based hybrids Design Loaded-line: Distortion: Distorted if lumped Undistorted and TTD if distributed Reflect-type: Applications: reflect arrays (S11 phase shifters) Distortion: Distorted if S21 phase shifter, because of 3 dB coupler Undistorted and TTD if S11 phase shifter Switched-network Network: High-pass or low-pass or T Distortion: Undistorted if the left-handed high-pass sections cancel out the distortion of the right-handed low-pass sections Switched-line Applications: UWB beam steering Distortion: undistorted and TTD Vector summing Figures of Merit Number of Effective bits, if digital [ Bit ] Biasing: current-driven, high-voltage electrostatic [mA, V] DC power consumption [mW] Distortion: group velocity dispersion (GVD) [ps/(km .
After revision: SiGe, InP, GaN or Sb): Active: BJT or FET transistor based MMICs, RFICs or optical ICs Passive: PIN diode based hybrids Design Loaded-line: Distortion: Distorted if lumped Undistorted and TTD if distributed Reflect-type: Applications: reflect arrays (S11 phase shifters) Distortion: Distorted if S21 phase shifter, because of 3 dB coupler Undistorted and TTD if S11 phase shifter Switched-network Network: High-pass or low-pass or T Distortion: Undistorted if the left-handed high-pass sections cancel out the distortion of the right-handed low-pass sections Switched-line Applications: UWB beam steering Distortion: undistorted and TTD Vector summing Figures of merit Number of effective bits, if digital [ bit ] Biasing: current-driven, high-voltage electrostatic [mA, V] DC power consumption [mW] Distortion: group velocity dispersion (GVD) [ps/(km