Before revision: This means that the rotal resistance can be written in the following functional form, with the pad distance as independent variable: If the contribution of the metal layer itself is neglected then arises because of the voltage drop at the metal-semiconductor interface as well as in the semiconductor substrate underneath.
After revision: This means that the total resistance can be written in the following functional form, with the pad distance as independent variable: If the contribution of the metal layer itself is neglected then arises because of the voltage drop at the metal-semiconductor interface as well as in the semiconductor substrate underneath.