Before revision: History The MOSFET (metal–oxide–semiconductor field-effect transistor), invented by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, , the first transistors in which drain and source were adjacent at the surface.
After revision: History In 1957, Frosch and Derick were able to manufacture the first silicon dioxide field effect transistors at Bell Labs , the first transistors in which drain and source were adjacent at the surface.