Before revision: Eutectic bonding to transfer epitaxial materials such as GaAs-AlGaAs onto Si substrates with a high degree of success, for the general purpose of optoelectronics integration with Si electronics as well as to overcome fundamental issues such as lattice mismatch in hetero-epitaxy, was developed and reported by Venkatasubramanian et al.
After revision: Eutectic bonding to transfer epitaxial materials such as GaAs-AlGaAs onto Si substrates with high yields for the general purpose of optoelectronics integration with Si electronics as well as to overcome fundamental issues such as lattice mismatch in hetero-epitaxy, was developed and reported by Venkatasubramanian et al.