Before revision: For example, a high-k material with dielectric constant of 39 (compared to 3.9 for silicon oxide) can be made ten times thicker than silicon oxide which helps to reduce the leakage of electrons across the dielectric pad .
After revision: while achieving the same capacitanceFor example, a high-k material with dielectric constant of 39 (compared to 3.9 for silicon oxide) can be made ten times thicker than silicon oxide which helps to reduce the leakage of electrons across the dielectric pad .