Before revision: 266-267 The following equation must be satisfied for a semiconductor under carrier injection conditions, where n is the number of electrons, delta N is the excess carriers injected into the semiconductor and n0 is the intrinsic concentration of electrons in the semiconductor: The following relation must also be true, because for every electron injected a hole must also be created to keep a balance of charge: Therefore and .
After revision: The assumption of low level injection can be made regarding an n-type semiconductor, which effects the equations in the following way:266-267 The following equation must be satisfied for a semiconductor under carrier injection conditions, where n is the number of electrons, delta N is the excess carriers injected into the semiconductor and n0 is the intrinsic concentration of electrons in the semiconductor: The following relation must also be true, because for every electron injected a hole must also be created to keep a balance of charge: Therefore and .