Before revision: Gold wire ball-bonded on a silicon die Aluminium wires wedge-bonded to a BC160 transistor die The interconnections in a power package are made using thick (250 to 400 μm), wedge-bonded, aluminium wires
After revision: .Gold wire ball-bonded on a silicon die Aluminium wires wedge-bonded to a BC160 transistor die The interconnections in a power package are made using thick (250 to 400 μm), wedge-bonded, aluminium wires