Before revision: The data in the cells is read or written by the same bit-lines which run along the top of the rows and columns.Characterization of SRAM sense amplifier input offset for yield prediction in 28nm CMOS, Custom Integrated Circuits Conference (CICC), 2011 IEEE SRAM Operation To read a bit from a particular memory cell, the wordline along the cell's row is turned on, activating all the cells in the row.
After revision: The data in the cells is read or written by the same bit-lines which run along the top of the rows and columns.Characterization of SRAM sense amplifier input offset for yield prediction in 28nm CMOS, Custom Integrated Circuits Conference (CICC), 2011 IEEE SRAM operation To read a bit from a particular memory cell, the wordline along the cell's row is turned on, activating all the cells in the row.