Before revision: CHMOS III used 1.5 micron lithography, p-well processing, n-well processing, and two layers of metal.A double layer metal CHMOS III technologyRant, Jon; "CHMOS: Matching Process to Product", Intel Corporation, Solutions, January/February 1986, Page 17 CHMOS III-E used for the 12.5 MHz Intel 80C186 microprocessor.Ormsby, John, Editor, "New Product Focus: Components: It's Under Control With The 80C186", Intel Corporation, Microcomputer Solutions, November/December 1987, page 13 This technology uses 1 μm process for the EPROM.Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14 CHMOS IV (H stands for High Speed) used 1.0 μm lithography.
After revision: wasCHMOS III used 1.5 micron lithography, p-well processing, n-well processing, and two layers of metal.A double layer metal CHMOS III technologyRant, Jon; "CHMOS: Matching Process to Product", Intel Corporation, Solutions, January/February 1986, Page 17 CHMOS III-E used for the 12.5 MHz Intel 80C186 microprocessor.Ormsby, John, Editor, "New Product Focus: Components: It's Under Control With The 80C186", Intel Corporation, Microcomputer Solutions, November/December 1987, page 13 This technology uses 1 μm process for the EPROM.Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14 CHMOS IV (H stands for High Speed) used 1.0 μm lithography.