Before revision: Low-κ materials In integrated circuits, and CMOS structures , silicon dioxide can readily be formed on surfaces of Si through thermal oxidation, and can be deposited on the surfaces of conductors using chemical vapor deposition or other thin film deposition methods.
After revision: Low-κ materials In integrated circuits, and CMOS devices , silicon dioxide can readily be formed on surfaces of Si through thermal oxidation, and can be deposited on the surfaces of conductors using chemical vapor fabricationfurthervarious or other thin film deposition methods.