Before revision: The package has to fulfill the following requirements: protection against environmental influences heat dissipation integration of elements with different technologies compatibility with the surrounding periphery maintenance of energy and information flow Techniques The commonly used and developed bonding methods are as follows: Direct bonding Surface activated bonding Plasma activated bonding Anodic bonding Eutectic bonding Glass frit bonding Adhesive bonding Thermocompression bonding Reactive bonding Transient liquid phase diffusion bonding Atomic Diffusion Bonding Requirements The bonding of wafers requires specific environmental conditions which can generally be defined as follows: substrate surface flatness smoothness cleanliness bonding environment bond temperature ambient pressure applied force materials substrate materials intermediate layer materials The actual bond is an interaction of all those conditions and requirements.
After revision: The package has to fulfill the following requirements: protection against environmental influences heat dissipation integration of elements with different technologies compatibility with the surrounding periphery maintenance of energy and information flow Techniques The commonly used and developed bonding methods are as follows: Direct bonding Surface activated bonding Plasma activated bonding Anodic bonding Eutectic bonding Glass frit bonding Adhesive bonding Thermocompression bonding Reactive bonding Transient liquid phase diffusion bonding Atomic diffusion bonding Requirements The bonding of wafers requires specific environmental conditions which can generally be defined as follows: substrate surface flatness smoothness cleanliness bonding environment bond temperature ambient pressure applied force materials substrate materials intermediate layer materials The actual bond is an interaction of all those conditions and requirements.