Before revision: With this substitution, the Shichman–Hodges model provides an approximate form for function f(VGS, VDG): where is a technology-related constant associated with the transistor, W/L is the width to length ratio of the transistor, is the gate-source voltage, is the threshold voltage, λ is the channel length modulation constant, and is the drain-source voltage.
After revision: With this substitution, the Shichman–Hodges model provides an approximate form for function f(VGS, VDG): where is a technology-related constant associated with the transistor, W/L is the width to technological limit ratio of the transistor, is the gate-source voltage, is the threshold voltage, λ is the channel length modulation constant, and is the drain-source voltage.