IMPROVEMENT OF SELF-ALIGNED DOUBLE PATTERNING USING SPIN-ON-CARBON MATERIAL
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

In this paper the advantages of using self-aligned double patterning in conjunction with extreme ultraviolet photolithography were analyzed, and a promising spin-on-carbon material used as the layer for the original pattern of the structure to be formed was identified. In addition, a method to treat and protect the shape of the initial profile of regular structure lines by using a direct current superposition on a capacitively-coupled plasma chamber was presented.