Structural and morphological properties of contacts to a (111) orientation monosilicon substrate based on aluminum with a Ti and w – 10 % Ti barrier layer
Journal: Yugra State University Bulletin
Year: 2022

The paper presents the results of studies on the formation of ohmic contacts to monosilicon from aluminum in the presence of a thin-film barrier layer based on titanium and tungsten.&#x0D; The purpose of reseach: to study the mechanism of solid-phase interaction in Al/Ti/Si and Al/Ti/SiOx/Si systems during the formation of contacts to (111) orientation silicon based on aluminum with a Ti and W 10% Ti barrier layer, their structural and morphological properties and ways to manage this mechanism.