STRUCTURAL AND ELECTROPHYSICALLY PERFECT SILICONSAPPHIRE HETEROPAIRS WITH A HIGH-K INTERLAYER DIELECTRIC
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

This work investigates the features of the formation of a silicon-sapphire interlayer heterointerface obtained by direct splicing, both with an intermediate amorphous dielectric (Hf, Zr, Al; AlN oxides) and without it. The results of structural and electrophysical studies of these structures are presented.