Étude des mécanismes de déclenchement des Bits Collés dans les SRAM et DRAM en Environnement Radiatif Spatial
Journal: theses.fr (ABES)
Year: 2017

CNES’s onboard experiment results on several satellites have demonstrated that on SRAM and SDRAM memories, a fraction of words suffers from unknown errors that increase the afflicted words’ rate of error by orders of magnitude compared to other words. CNES’s experts found that these errors were due to the space radiation environment (proton, electrons, heavy ions).The main goals of this Ph.D. thesis are to successfully recreate such errors at ground level using irradiation facilities and particl