MAIN LDE EFFECTS OF DEEP SUBMICRON MOS TRANSISTORS AND APPROACHES TO THEIR CONSIDERATION INTO SPICE MODELS
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

A review of the main, in terms of the influence on the electrophysical behavior of the MOS transistor, topology-dependent effects (LDE) was performed. Approaches to development test structures designed for their subsequent measurement, extraction of SPICE parameters and integration the results into a compact model are proposed.