TEMPERATURE DEPENDENCE OF THE CONTRASTS OF THE ELECTRON HSQ RESIST AT DIFFERENT METHODS OF DEVELOPMENT
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

In this work a study of the dependence of the contrast value of a negative electron resist based on hydrogensilsesquioxane was carried out in the process of development in an aqueous alkaline-salt solution of NaOH-NaCl at different temperatures, and a similar study was carried out for a widespread method of development in a 25% TMAH solution.