INVESTIGATION OF LOSSES IN SILICON AT MICROWAVE FREQUENCIES
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2019

In this work basic mechanisms of microwave losses in silicon substrate and at the interfacial Si/heterostructure AlGaN/GaN for HEMTs and MMIC were investigated. Methods for reducing of losses were proposed. Requirements to resistivity of silicon substrate taking into account the characteristics of growth AlGaN/GaN heterostructure were defined.