Complex destruction of near-surface silicon layers of Si-SiO2 structure
Journal: Semiconductor Physics Quantum Electronics & Optoelectronics
Year: 2010

The structure of near-surface silicon layers of Si-SiO 2 has been investigated. It was observed the complex destruction of these layers caused by relaxation of mechanical stresses. The magnitude of mechanical stresses depends not only on parameters of silicon dioxide and silicon but on presence of initial defects in silicon. We have proposed the defect formation mechanism of near-surface layers in Si-SiO 2 structure, and it has been revealed the influence of impurities on this process.