Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current
Journal: Chemistry of Materials
Year: 2015

Phase change memory (PCM) is one of the most promising candidates for next-generation nonvolatile memory devices because of its high speed, excellent reliability, and outstanding scalability. However, the high switching current of PCM devices has been a critical hurdle to realize low-power operation. Although one solution is to reduce the switching volume of the memory, the resolution limit of photolithography hinders further miniaturization of device dimensions. In this study, we employed uncon