A FLEXIBLE APPROACH TO SIMULATE ELECTROFORMING AND RESISTIVE SWITCHING IN METAL OXIDE MEMRISTIVE DEVICES CONTAINING FILAMENTS
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

An original model of resistive switching of metal oxide memristive devices is proposed. The efficiency and flexibility of the approach are demonstrated by the example of experimentally realized Au/oxide/TiN structures.