Journal: Semiconductor Physics Quantum Electronics & Optoelectronics
Year: 2013

We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n + -GaN contact metallization that appear at rapid thermal annealing (RTA).It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900 C due to formation of titanium nitride.We studied experimentally and explained theoretically the temperature dependence of contact resistivity ρ с (Т) of ohmic contacts in the 4.2-380 K temperature range.The ρ