REFLECTION SPECTRA OF GE-SB-TE DIFFRACTION GRATING ON A SILICON-ON-INSULATOR WAVEGUIDE
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

In this work a diffraction grating made of a phasechange material (GeSbTe) and placed on a silicon-on-insulator waveguide is considered as a potential component of the optical non-volatile memory cell. Reflection spectra of such waveguidegrating structures are calculated with use of the Matrix Riccati Equation technique. Parameters corresponding to the excitation of a resonant mode inside the grating, which can help decreasing the energy budget for switching the GeSbTe phase, are determined.