RADIATION-INDUCED GROWTH EPITAXIAL CASI2 FILM
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

In this work investigated crystal structure of films formed by molecular beam epitaxy (MBE) of CaSi2 on Si (111), under electron irradiation by the method of Raman light scattering (RS), it was found that a CaSi2 film is formed at the interface between the silicon substrate and the epitaxially growing CaF2 film under the influence of an electron beam.