LAYERED IN2SE3 ON SI (111) SURFACE WITH HYSTERESIS OF THE TEMPERATURE DEPENDENCE OF RESISTANCE
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

In this work, the methods of controlled growth of two-dimensional In2Se3 on a Si (111) substrate were studied by reflection high-energy electron diffraction (RHEED). According to experimental data, the deposition rate reduction increases the size of two-dimensional In2Se3 islands. The temperature dependence of the film resistance was measured by the two-contact technique. At temperature decrease near T = 140 K, an abrupt decrease in resistance by a factor of ~ 1000 was found. The reverse transit