The physical principles of terahertz silicon lasers based on intracenter transitions
Journal: physica status solidi (b)
Year: 2012

Abstract The first silicon laser was reported in the year 2000. It is based on impurity transitions of the hydrogen‐like phosphorus donor in monocrystalline silicon. Several lasers based on other group‐V donors in silicon have been demonstrated since then. These lasers operate at low lattice temperatures under optical pumping by a midinfrared laser and emit light at discrete wavelengths in the range from 50 to 230 µm (between 1.2 and 6.9 THz). Dipole‐allowed optical transitions between particula