CRYSTAL STRUCTURE OF CASI2 FILMS FORMED UPON RADIATION-STIMULATED EPITAXIAL GROWTH OF CAF2 ON SI
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

The crystal structure of films formed by molecular beam epitaxy (MBE) CaSi2 on Si (111) under electron irradiation was investigated [1]. It was found by the method of Raman scattering (RS) that with an increase in the thickness of the CaF2 film, a structural transition occurs in the CaSi2 film of the space group R3̅m from the 3-layer to 6-layer translational period of the crystal lattice (from 3R to 6R).