THE NANOCRYSTALS SIZE ESTIMATION USING RAMAN SPECTROSCOPY IN A-SIOX:H FILMS AFTER CRYSTALLIZATION OF SILICON NANOCLUSTERS
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

The a-SiOx thin films with silicon nanoclusters are currently being actively studied by various laboratories due to the possibility of efficient control of their optical properties, both at the stage of formation and using technological treatments. The presence of excess silicon in such films leads to the growth of nanocrystals during high-temperature annealing, which affects the optical properties of SiOx films, including photoluminescence. Therefore, in this work, we studied the formation of s