LOW-ENERGY LOW-INTENSITI X-RAY RADIATION EFFECT ON THE SOI STRUCTURES ELECTROPHYSICAL CHARACTERISTICS
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

The low-energy low-intensity X-ray radiation effect on SOI structure electrophysical characteristics research results by mercury probe method is concerned here.