INVESTIGATION OF THERMAL EFFECTS IN HFO2 RRAM STRUCTURES DURING THE RESET PROCESS
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

In this paper, the formation and rupture of a conducting filament in the Hf/HfO2/TiN structure are investigated. Theoretical consideration of the thermal effects occurring during the RESET process is covered. The analysis of the formation and rupture of a filament in an amorphous HfO2 layer is carried out. The introduction of the thin Al2O3 layer into the Hf/HfO2/TiN structure is also considered.