Fermi Level of Carriers in the Volume Filling Defects Structure Based on Heat-Resistant Metals
Journal: Electronic Sumy State University Institutional Repository (Sumy State University)
Year: 2011

The volume filling defects structure based on metals are widely used in modern nan- otechnology, especially when creating high temperature sensors and structural elements based on metal foams [1]. The development of contactless and nondestructive methods for diagnosis and test control parameters of multiply connected matrix base material is a very important and interesting aspect of the application [2]. In a heat-resistant metal with the volume filling defects (VFD) (micro- and nanopores with co