NEGATIVE MAGNETORESISTANCE SICXNY:FE FILMS
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

The tunneling magnetoresistance of granular SiCxNy: Fe films obtained by deposition from the gas phase is investigated. A model is proposed in which, due to anisotropy and exchange interaction, the magnetoresistance is effectively decoupled from the magnetization.