FORMATION OF DIFFUSION BARRIERS IN THE COPPER METALLIZATION SYSTEM IN THE GAP FILLING METHOD
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

The paper proposes and studies materials for diffusion barriers in the gap filling method to prevent copper diffusion through open ends of conductors.