LIGHT EMMITTING RECOMBINATION IN HETEROSTRUCTURES GE/SI WITH QUANTUM DOTS FORMED WITH USING ION BEAM RADIATION
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

This work devotes to a comparative study of the photoluminescence of Ge/Si epitaxial structures with quantum dots created with using ion beam irradiation and structures with Ge nanoclusters formed as a result of the implantation of Ge ions into silicon and subsequent annealing.