DEPENDENCE OF ELASTIC STRESSES ON THE THICKNESS OF THE DEPOSITED MATERIAL FOR GERMANIUM GROWTH ON SILICON
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

In this work, the dependences of the elastic stresses on the thickness of the deposited material during the growth of germanium quantum dots on silicon have been determined by the fast electron diffraction method. It is shown that the relative value substrate in this system reaches 12.5%.