LOW-TEMPERATURE ANNEALING OF LIGHT-EMITTING DEFECTS IN SILICON, IRRADIATED WITH SWIFT HEAVY IONS
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

The optical and structural properties of silicon irradiated with swift heavy Xe ions are investigated. In the photoluminescence (PL) spectra at low temperatures, a broad peak is observed in the range 1.3 - 1.5 μm. With an increase in the irradiation dose from 5 × 1010 to 1013 cm –2, the PL peak decreases and became narrows. Annealing at a temperature of 400° C leads to multiple signal amplification (up to 35 times).