MODELLING OF STRUCTURE BASED ON JUNCTIONLESS TRANSISTOR IN TCAD SYSTEM
Journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Year: 2020

The purpose of this work is to synthesize a transistor with a lower leakage current. The paper describes a new type of transistors that do not contain p-n junctions - junctionless transistors. The physical principles of operation of such devices are briefly stated. On the basis of the junctionless transistor, a structure is proposed that has a lower leakage current as compared to the junctionless transistors. Numerical modeling of the proposed structure in the TCAD system is carried out. The cur