Optical Characterization of InGaN Quantum Structures at the Nanoscale
Journal: Advanced Quantum Technologies
Year: 2024

Abstract This review paper presents an overview of the optical characterization techniques for Indium Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major techniques are reviewed—Electron Microscopy‐Cathodoluminescence (EM‐CL) and Scanning Near‐field Optical Microscopy (SNOM). It elucidates the critical role these methodologies play in revealing the complex properties of InGaN QWs, including their structural characteristics, optical properties, carrier dynamics, and