Ferroelectric memory: state-of-the-art manufacturing and research
Journal: Russian Technological Journal
Year: 2020

Semiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost. Ferroelectric memory FRAM has been considered as one of the emerging memory technologies for over 20 years. FRAM uses polarization switching that provides low power consumption, nonvolatility, high speed and endurance, robust data retention, and resistance to data corruption v