Application of Metal-Oxide-Semiconductorstructures containing silicon nanocrystals inradiation dosimetry
Journal: Open Physics
Year: 2014

Abstract This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process