List of semiconductor materials
Table of semiconductor materials

List of semiconductor materials

Section Title: Table of semiconductor materials
Table Section Text: None

Group	Elem.	Material	Formula	Band gap (eV)	Gap type	Description

IV	1	Diamond	C	5.47	indirect	Excellent thermal conductivity. Superior mechanical and optical properties. Extremely high nanomechanical resonator quality factor.

IV	1	Silicon	Si	1.12	indirect	Used in conventional crystalline silicon (c-Si) solar cells, and in its amorphous form as amorphous silicon (a-Si) in thin-film solar cells.

IV	1	Germanium	Ge	0.67	indirect	Used in early radar detection diodes and first transistors; requires lower purity than silicon. A substrate for high-efficiency multijunction photovoltaic cells.

IV	1	Gray tin, α-Sn	Sn	0.00, 0.08	indirect	Low temperature allotrope (diamond cubic lattice).

IV	2	Silicon carbide, 3C-SiC	SiC	2.3	indirect	used for early yellow LEDs

IV	2	Silicon carbide, 4H-SiC	SiC	3.3	indirect

IV	2	Silicon carbide, 6H-SiC	SiC	3.0	indirect	used for early blue LEDs

VI	1	Sulfur, α-S	S8	2.6

VI	1	Gray selenium	Se	1.74	indirect	Used in selenium rectifiers.

VI	1	Red selenium	Se	2.05	indirect

VI	1	Tellurium	Te	0.33

III-V	2	Boron nitride, cubic	BN	6.36	indirect	potentially useful for ultraviolet LEDs

III-V	2	Boron nitride, hexagonal	BN	5.96	quasi-direct	potentially useful for ultraviolet LEDs

III-V	2	Boron nitride nanotube	BN	~5.5

III-V	2	Boron phosphide	BP	2	indirect

III-V	2	Boron arsenide	BAs	1.14	direct	Resistant to radiation damage, possible applications in betavoltaics.

III-V	2	Boron arsenide	B12As2	3.47	indirect	Resistant to radiation damage, possible applications in betavoltaics.

III-V	2	Aluminium nitride	AlN	6.28	direct	Piezoelectric. Not used on its own as a semiconductor; AlN-close GaAlN possibly usable for ultraviolet LEDs.

III-V	2	Aluminium phosphide	AlP	2.45	indirect

III-V	2	Aluminium arsenide	AlAs	2.16	indirect

III-V	2	Aluminium antimonide	AlSb	1.6/2.2	indirect/direct

III-V	2	Gallium nitride	GaN	3.44	direct	problematic to be doped to p-type, p-doping with Mg and annealing allowed first high-efficiency blue LEDs and blue lasers. Very sensitive to ESD.

III-V	2	Gallium phosphide	GaP	2.26	indirect	Used in early low to medium brightness cheap red/orange/green LEDs. Used standalone or with GaAsP.

III-V	2	Gallium arsenide	GaAs	1.43	direct	second most common in use after silicon, commonly used as substrate for other III-V semiconductors, e.g. InGaAs and GaInNAs.

III-V	2	Gallium antimonide	GaSb	0.726	direct	Used for infrared detectors and LEDs and thermophotovoltaics. Doped n with Te, p with Zn.

III-V	2	Indium nitride	InN	0.7	direct	Possible use in solar cells, but p-type doping difficult. Used frequently as alloys.

III-V	2	Indium phosphide	InP	1.35	direct	Commonly used as substrate for epitaxial InGaAs. Superior electron velocity, used in high-power and high-frequency applications. Used in optoelectronics.

III-V	2	Indium arsenide	InAs	0.36	direct	Used for infrared detectors for 1–3.8 µm, cooled or uncooled. High electron mobility.

III-V	2	Indium antimonide	InSb	0.17	direct	Used in infrared detectors and thermal imaging sensors, high quantum efficiency, low stability, require cooling, used in military long-range thermal imager systems.

II-VI	2	Cadmium selenide	CdSe	1.74	direct	Nanoparticles used as quantum dots. Intrinsic n-type, difficult to dope p-type, but can be p-type doped with nitrogen.

II-VI	2	Cadmium sulfide	CdS	2.42	direct	Used in photoresistors and solar cells; CdS/Cu2S was the first efficient solar cell. Used in solar cells with CdTe.

II-VI	2	Cadmium telluride	CdTe	1.49	direct	Used in solar cells with CdS. Used in thin film solar cells and other cadmium telluride photovoltaics; less efficient than crystalline silicon but cheaper.

II-VI, oxide	2	Zinc oxide	ZnO	3.37	direct	Photocatalytic. Band gap is tunable from 3 to 4 eV by alloying with magnesium oxide and cadmium oxide.

II-VI	2	Zinc selenide	ZnSe	2.7	direct	Used for blue lasers and LEDs. Easy to n-type doping, p-type doping is difficult but can be done with e.g.

II-VI	2	Zinc sulfide	ZnS	3.54/3.91	direct	Band gap 3.54 eV (cubic), 3.91 (hexagonal). Can be doped both n-type and p-type. Common scintillator/phosphor when suitably doped.

II-VI	2	Zinc telluride	ZnTe	2.25	direct	Can be grown on AlSb, GaSb, InAs, and PbSe. Used in solar cells, components of microwave generators, blue LEDs and lasers.

I-VII	2	Cuprous chloride	CuCl	3.4	direct

I-VI	2	Copper sulfide	Cu2S	1.2	indirect	p-type, Cu2S/CdS was the first efficient thin film solar cell

IV-VI	2	Lead selenide	PbSe	0.27	direct	Used in infrared detectors for thermal imaging. Nanocrystals usable as quantum dots. Good high temperature thermoelectric material.

IV-VI	2	Lead(II) sulfide	PbS	0.37	Mineral galena, first semiconductor in practical use, used in cat's whisker detectors; the detectors are slow due to high dielectric constant of PbS.

IV-VI	2	Lead telluride	PbTe	0.32	Low thermal conductivity, good thermoelectric material at elevated temperature for thermoelectric generators.

IV-VI	2	Tin sulfide	SnS	1.3/1.0	direct/indirect	Tin sulfide (SnS) is a semiconductor with direct optical band gap of 1.3 eV and absorption coefficient above 104 cm−1 for photon energies above 1.3 eV.

IV-VI	2	Tin sulfide	SnS2	2.2	SnS2 is widely used in gas sensing applications.

IV-VI	2	Tin telluride	SnTe	0.18	Complex band structure.

IV-VI	3	Lead tin telluride	PbSnTe [dubious – discuss]	Used in infrared detectors and for thermal imaging.

IV-VI	3	Lead tin telluride	Pb1−xSnxTe	0-0.29	Used in infrared detectors and for thermal imaging

IV-VI	3	Thallium tin telluride	Tl2SnTe5

IV-VI	3	Thallium germanium telluride	Tl2GeTe5

V-VI, layered	2	Bismuth telluride	Bi2Te3	Efficient thermoelectric material near room temperature when alloyed with selenium or antimony. Narrow-gap layered semiconductor.

II-V	2	Cadmium phosphide	Cd3P2

II-V	2	Cadmium arsenide	Cd3As2	0.14	N-type intrinsic semiconductor. Very high electron mobility.

II-V	2	Cadmium antimonide	Cd3Sb2

II-V	2	Zinc phosphide	Zn3P2	1.5	direct

II-V	2	Zinc arsenide	Zn3As2

II-V	2	Zinc antimonide	Zn3Sb2	Used in infrared detectors and thermal imagers, transistors, and magnetoresistors.

Oxide	2	Titanium dioxide, anatase	TiO2	3.20	indirect	photocatalytic, n-type

Oxide	2	Titanium dioxide, rutile	TiO2	3.0	direct	photocatalytic, n-type

Oxide	2	Titanium dioxide, brookite	TiO2	3.26

Oxide	2	Copper(I) oxide	Cu2O	2.17	One of the most studied semiconductors. Many applications and effects first demonstrated with it.

Oxide	2	Copper(II) oxide	CuO	1.2	P-type semiconductor.

Oxide	2	Uranium dioxide	UO2	1.3	High Seebeck coefficient, resistant to high temperatures, promising thermoelectric and thermophotovoltaic applications. Formerly used in URDOX resistors, conducting at high temperature.

Oxide	2	Uranium trioxide	UO3

Oxide	2	Bismuth trioxide	Bi2O3	Ionic conductor, applications in fuel cells.

Oxide	2	Tin dioxide	SnO2	3.7	Oxygen-deficient n-type semiconductor. Used in gas sensors.

Oxide	3	Barium titanate	BaTiO3	3	Ferroelectric, piezoelectric. Used in some uncooled thermal imagers. Used in nonlinear optics.

Oxide	3	Strontium titanate	SrTiO3	3.3	Ferroelectric, piezoelectric. Used in varistors. Conductive when niobium-doped.

Oxide	3	Lithium niobate	LiNbO3	4	Ferroelectric, piezoelectric, shows Pockels effect. Wide uses in electrooptics and photonics.

Oxide	3	Lanthanum copper oxide	La2CuO4	2	superconductive when doped with barium or strontium

V-VI	2	monoclinic Vanadium(IV) oxide	VO2	0.7	optical	stable below 67°C

Layered	2	Lead(II) iodide	PbI2

Layered	2	Molybdenum disulfide	MoS2	1.23 eV (2H)	indirect

Layered	2	Gallium selenide	GaSe	2.1	indirect	Photoconductor. Uses in nonlinear optics.

Layered	2	Tin sulfide	SnS	>1.5 eV	direct

Layered	2	Bismuth sulfide	Bi2S3

Magnetic, diluted (DMS)	3	Gallium manganese arsenide	GaMnAs

Magnetic, diluted (DMS)	3	Indium manganese arsenide	InMnAs

Magnetic, diluted (DMS)	3	Cadmium manganese telluride	CdMnTe

Magnetic, diluted (DMS)	3	Lead manganese telluride	PbMnTe

Magnetic	4	Lanthanum calcium manganate	La0.7Ca0.3MnO3	colossal magnetoresistance

Magnetic	2	Iron(II) oxide	FeO	antiferromagnetic

Magnetic	2	Nickel(II) oxide	NiO	3.6–4.0	direct	antiferromagnetic

Magnetic	2	Europium(II) oxide	EuO	ferromagnetic

Magnetic	2	Europium(II) sulfide	EuS	ferromagnetic

Magnetic	2	Chromium(III) bromide	CrBr3

other	3	Copper indium selenide, CIS	CuInSe2	1	direct

other	3	Silver gallium sulfide	AgGaS2	nonlinear optical properties

other	3	Zinc silicon phosphide	ZnSiP2

other	2	Arsenic trisulfide Orpiment	As2S3	2.7	direct	semiconductive in both crystalline and glassy state

other	2	Arsenic sulfide Realgar	As4S4	semiconductive in both crystalline and glassy state

other	2	Platinum silicide	PtSi	Used in infrared detectors for 1–5 µm. Used in infrared astronomy.

other	2	Bismuth(III) iodide	BiI3

other	2	Mercury(II) iodide	HgI2	Used in some gamma-ray and x-ray detectors and imaging systems operating at room temperature.

other	2	Thallium(I) bromide	TlBr	2.68	Used in some gamma-ray and x-ray detectors and imaging systems operating at room temperature. Used as a real-time x-ray image sensor.

other	2	Silver sulfide	Ag2S	0.9

other	2	Iron disulfide	FeS2	0.95	Mineral pyrite. Used in later cat's whisker detectors, investigated for solar cells.

other	4	Copper zinc tin sulfide, CZTS	Cu2ZnSnS4	1.49	direct	Cu2ZnSnS4 is derived from CIGS, replacing the Indium/Gallium with earth abundant Zinc/Tin.

other	4	Copper zinc antimony sulfide, CZAS	Cu1.18Zn0.40Sb1.90S7.2	2.2	direct	Copper zinc antimony sulfide is derived from copper antimony sulfide (CAS), a famatinite class of compound.

other	3	Copper tin sulfide, CTS	Cu2SnS3	0.91	direct	Cu2SnS3 is p-type semiconductor and it can be used in thin film solar cell application.

Sentence(s)

Gallium phosphide (GaP) is a compound semiconductor material.

final_sentence: Gallium phosphide (GaP) is a compound semiconductor material.