15 GHz 25 dBm multigate-cell stacked CMOS power amplifier with 32 % PAE and ≥ 30 dB gain for 5G applications
An X-band, 23.8-dBm fully integrated power amplifier with 25.8% PAE in 0.18-µm CMOS technology
RF performance of 28nm PolySiON and HKMG CMOS devices
A 45GHz Doherty power amplifier with 23% PAE and 18dBm output power, in 45nm SOI CMOS