Thin-Wafer Silicon IGBT With Advanced Laser Annealing and Sintering Process
3300 V HiPak 2 modules with Enhanced Trench ( TSPT + ) IGBTs and Field Charge Extraction Diodes rated up to 1800 A
Thin Silicon Wafer Device Concept with Advanced Laser Annealing and Sintering Process
Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability
Full electro-thermal model of a 6.5kV field-stop IGBT module
A New Isolation Technique for Reverse Blocking IGBT with Ion Implantation and Laser Annealing to Tapered Chip Edge Sidewalls