Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
1.8 mΩcm2, 10 A Power MOSFET in 4H-SiC
Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer
The insulated gate rectifier (IGR): A new power switching device