A balanced High Voltage IGBT design with ultra dynamic ruggedness and area-efficient edge termination
High voltage device edge termination for wide temperature range plus humidity with surface charge control (SCC) technology
Characteristics of a 1200 V CSTBT optimized for industrial applications
Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability
Wide Cell Pitch LPT(II)-CSTBT™(III) technology rating up to 6500 V for low loss
CSTBT (III) as the next generation IGBT