High performance SiC trench devices with ultra-low ron
Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode
Demonstration of 3 kV 4H-SiC reverse blocking MOSFET
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)
SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss
Impact of grounding the bottom oxide protection layer on the short-circuit ruggedness of 4H-SiC trench MOSFETs