A proposal of LDMOS using Deep Trench poly field plate
Advanced 0.13um smart power technology from 7V to 70V
0.35μm, 30V fully isolated and low-Ron nLDMOS for DC-DC applications
0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V
Ultra-low on-resistance LDMOS implementation in 0.13µm CD and BiCD process technologies for analog power IC's
BCD8sP: An advanced 0.16 μm technology platform with state of the art power devices