An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM
Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study
Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses
Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory