[en] Renewable energies are experiencing a significant growth in the recent years. Due to their characteristics, power electronics are necessary for their massive integration into the grid. In this context, high power silicon carbide (SiC) modules are identified as possible candidates to improve the features of currently used silicon (Si) insulated gate bipolar transistors (IGBT) in the wind energy, given their improved characteristics. The main goal of this thesis is to analyze their impact in wind energy systems, and to identify the challenges high power SiC modules bring when compared to Si IGBTs. The levelized cost of energy (LCoE) is the main market competiveness indicator for the energy sources. This is why a LCoE calculation tool is developed to analyze the theoretical impact of SiC semiconductors in several wind energy systems' power electronics configurations. The results show SiC semiconductors are not able to improve the LCoE of the current configuration because of their high cost, if the semiconductors are replaced one to one. However, if the whole system is optimized, increasing the switching frequency, the SiC semiconductors become competitive. In additon, if their cost is reduced, as expected for the future years, their befenits are increased. The good switching characteristics and the high cost of three level (3L) topologies favour the two level (2L) topology over 3L topologies for the use of SiC semiconductors. Four laboratory prototypes are built to experimentaly verify the LCoE calculation tool results. 2L and 3L topologies are used, with Si and SiC semiconductors. The levelized cost of conversion energy (LCoCE) is used as an indicator to compare the configurations, because the available economical data in the laboratory prototypes is limited. The major conclusions obtained in the theoretical analysis by the LCoE calculation tool are confirmed experimentally. Finally, the main challenges of the application of high power SiC modules are presented. Several issues that do not affect the designs with slow Si IGBTs need to be considered when using fast switching SiC devices. Issues with the false turn on, the overshoot, the overcurrent protection and the measurements are explained, analyzed and prevention techniques listed. The laboratory prototype is used to validate design techniques to prevent overshoot issues by designing an optimized busbar for the fast switching of SiC modules in 3L converters. The optimization techniques are validated by inductance measurement with an impedance analyzer and swtching waveform analysis.

[eu] Energia berriztagarriak gorakada nabaria izaten ari dira azken urteetan. Beraien ezaugarriak direla eta, potentzia elektronika beharrezkoa da sarean integrazio masiboa egin ahal izateko. Kontestu honetan, eta beraien ezaugarri tekniko hobeengatik, potentzia altuko silizio karburozko (SiC) moduluak hautagai interesgarriak dira gaur egun erabiltzen diren siliziozko (Si) insulated gate bipolar transistors (IGBT-en ingelesez) prestazioak hobetzeko energia eolikoan. Tesi honen helburu nagusia SiC moduluek energia eolikoan duten inpaktua aztertzea da, beraien integrazioak dakartzan erronka nagusiekin. Energiaren kostu normalizatua (LCoE ingelesez) da energia iturrien lehiakortasuna neurtzen duen adierazle nagusia. Horregatik, LCoE-a kalkulatzen duen erreminta garatu da, SiC moduluek energia eolikoan erabiltzen diren potentzia elektronika konfigurazio ezberdinetan eduki dezaketen inpaktu teorikoa aztertzeko. Emaitzek, beraien kostu altuagatik SiC erdieroaleak gaur egungo LCoE-a hobetzeko gai ez direla erakusten dute, banan-banako aldaketa egin ezkero. Sistema guztia optimizatu ezkero ordea, kommutazio frekuentzia handituz, SiC erdieroaleak lehiakorrak izan daitezke. Hurrengo urteetan beraien kostua espero den bezala murriztuko balitz gainera, are eta interesgarriagoak lirateke. SiC-aren kostu altua eta kommutazio ezaugarri onak direla eta, 2 tentsio mailako (2L) topologiak hiru mailakoak (3L) baino egokiagoak dira SiC erdieroaleak erabiltzeko. Lau laborategiko prototipo eraiki dira esperimentalki LCoE kalkulu erremintak emandako emaitzak frogatzeko. 2 eta 3 mailako topologiak erabili dira, baita Si eta SiC erdieroaleak ere. Energiaren bihurketa kostu normalizatua (LCoCE ingelesez) erabili da konfigurazioen arteko konparaketa egiteko adierazle bezala, laborategiko prototipoen datu ekonomikoak mugatuak direlako. LCoE kalkulu erremintan lorturiko ondorio nagusiak berretsi dira esperimentalki. Azkenik, potentzia altuko SiC moduluen aplikazioak dakartzan erronka nagusiak aurkezten dira. Si IGBT motelekin eraginik ez duten fenomeno batzuk kontuz aztertu behar dira SiC erdieroale azkarrak erabiltzean. Pizketa faltsuekin, gaintentsioarekin, gainkorronte babesarekin edo neurketekin izan daitezkeen arazoak azaldu, aztertu eta prebentzio neurriak zerrendatzen dira. Laborategi prototipoa erabiltzen da gaintentsioa konpontzeko aurkezten diren diseinu teknikak balioztatzeko, 3L bihurgailuetan SiC erdieroaleen kommutazio azkarrarekin. Optimizazio teknikak induktantzia neurketekin eta kommutazio seinaleen azterketarekin balioztatu dira.