# Presentation: 168395

## Si Nanomembrane

- Mechanical bending of thin films is a ubiquitous phenomenon impacting on our daily life through household thermostat to advanced microelectromechanical systems (MEMS). With the emergence of nanotechnology, the thin-film bending mechanism has been widely exploited in nanoscale MEMS devices and sensors, as well as in flexible electronics and mechanochemical sensors. Another innovative use of the thin-film bending mechanism has been demonstrated for fabricating nanostructures, such as nanotubes and nanocoils, through so-called “nanomechanical architecture” of strained bilayer films [1].** **
- This novel nanofabrication approach has several important technological advantages. It is completely compatible with the Si technology, employing the industrial viable thin-film processing of growth, patterning, and lift-off (e.g., by etching). It is extremely versatile, applicable to most materials combinations, including semiconductors, metals, insulators, and polymers. It also allows fabrication of different types of nanostructures, with a high level of control over their size and shape based on *a priori* theoretical designs.
- However, there exist some fundamental limitations on the current application of the approach. So far, all the nanostructures are strictly made from bilayer or multilayer films, because misfit strain is employed as the only driving force for bending. The nanostructures, such as nanotubes, so made must have a fixed configuration with the tensile film (such as Si) as the inner layer and the compressive film (such as Ge) as the outer layer, as predefined by the lattice mismatch between the two constituting layer materials (such as Si and Ge). Recently, we have discovered a self-bending mechanism of nanofilms (nanomembranes) that will overcome these limitations [2]. We demonstrate that ultrathin Si and Ge nanofilms may self-bend without external stress load, under its own intrinsic surface stress imbalance arising from surface reconstruction. This leads to self-rolled-up pure Si and Ge nanotubes (see Fig. 1a), extending the nanomechanical architecture to single films of one material, without the need for deposition of a second strained layer. Under the same mechanism, SiGe bilayer nanofilms may bend toward the Ge side, opposite to what defined by misfit strain, allowing formation of SiGe nanotubes in an unusual configuration with Ge as the inner layer (see Figs. 1b and 1c). Such rolled-up nanotubes are found to accommodate very high strains, even beyond the misfit strain defined by lattice mismatch (i.e., larger than ~4% between Si and Ge), which in turn induce large variations of electronic and optoelectronic properties.
- [1] Minghuang Huang, C. Boone, M. Roberts, D. E. Savage, M. G. Lagally, N. Shaji, H. Qin, R. Blick, J. A. Nairn and Feng Liu, “Nanomechanical Architecture of Strained Bilayer Thin Films: from design principles to experimental fabrication”, *Adv. Mater*. **17**, 2860 (2005).
- [2] Ji Zang, Minghuang Huang and Feng Liu, “Nanotube Formation from Self-Bending Nanofilms Driven by Atomic-scale Surface Stress Imbalance”, *Phys. Rev. Lett*. (Submitted).

## Fig. 1. MD simulated nanotubes. (a) A Si nanotube formed by self-bending of a 5-layer Si beam. (b) A SiGe nanotube with Si as the inner layer formed by bending of a 5-layer SiGe beam. (c) A GeSi nanotube with Si as the inner layer formed by bending of a 5-layer GeSi beam.