# Presentation: 758495

## Wispry IncorporatedTunable RF Solutions

**Mark Chapman**
**Vice President , Business Development**
**mark.chapman@wispry.com**

## Wispry Overview

**Fabless Product Company**
**Established in October 2002; Spin-Out of Coventor**
**28 Employees, Headquartered in Irvine California**
**Raised $8M in Venture Capital (Seed and A Rounds)**
**Team has Worked On Wispry Core Technology Since 1999**
**Sampling Customers with RF Switch Module Products**
**Tunable RF Filter Development Program with Leading Handset Supplier**
**Start Production Shipments in 4Q 05**

## What is The Problem

**What is The Problem**

**Integration has largely driven cost out of Transceiver**
**CMOS Has Driven Path to Single Chip Transceivers**
**Yet Critical RF Filters and Duplexers Remains Discrete**

**Duplexer**

**Diplexer**
**Switch**

**Duplexer**

**TX Filter**

**Power Amp**

**Antenna**

***Baseband***

***Transceiver ***

**Isolator**

## On Chip RF Filters are Key to Further Silicon Integration of Radio Subsystems

**WiSpry Uses RF MEMS to Create Tunable RF Filters Which**
**Increase Integration**
**Lower Cost and Size**
**Reduce Power Consumption While Improving Performance**
**Simplify RF Design**** **
**Supply Through Successive Levels of Integration**
**Initially RF Front End Components and Modules **
**RF Subsystem Modules**
**Fully Integrated PAs and Single Chip Transceivers**

## New Wireless Technologies Continue to Evolve

**Distance (meters)**

**Mbps**

**1000**
**500**
**200**
**100**
**50**
**20**
**10**
**5**
**2**
**1**
**.5**

**.1             1             10            100           1,000          10,000**

**Wireless**
**MAN**

**Wireless**
**PAN**

**Wireless**
**LAN**

**Wireless WAN **
**inc Cellular**

**IEEE-802.16**
**IEEE-802.16a IEEE-802.16d**
**IEEE-802.16e**
**IEEE 802.11**
**Proprietary**

**GSM**
**GPRS**
**EDGE**
**CDMA 2000 3G**
**802.20**

**Bluetooth**
**UWB**
**IEEE-802.15.1**
**IEEE-802.15.3**
**IEEE-802.15.4**

**IEEE-802.11a**
**IEEE-802.11b**
**IEEE-802.11g**
**IEEE-802.11n**

**...****.. A Proliferation of Wireless Bands and Standards**

## Advancing Radio Complexity Means More Filters

**Proliferation of new Standards and new Frequency Bands**
**Each Additional Band has its own Filter**
**Each New Standard has its own Unique Filter Requirements**** **
**3G Phones (CDMA & WCDMA) are Full Duplex**
**Requires Additional Costly Duplexer **
**Increases Insertion Loss, Lowers Sensitivity, Lowers Battery Life**** **
**‘****Diversity Receive’ and MIMO Systems use Multiple Radios**
**Each with its own RF Chain**
**Each Requiring Additional Filters, Switches etc**

## Wispry’s Approach.......

**Wispry’s Approach.......**

**Standard CMOS Compatible**
**Manufacturing Process**

**Standard Design Library**

**MEMS RF Products**

**...****.Leverage Existing Semiconductor  Infrastructure and Processes**

## Digital Switch Technology

**Separate Signal and Control Path**
**No Coupling of Control Signal into RF Path**
**High Isolation Delivers Excellent RF Performance**
**Intra Switch Isolation Enables High Device Density**
**High RF Performance**
**Excellent Linearity, Insertion Loss, Isolation,  Low Power **
**Patented Tri-Layer Beam Creates Isolated Structures**
**Eliminates ‘Charging’ Effect, Improves Reliability, & Size**

## wiSpry RF-MEMS Devices in Action

- Actuation of RF-MEMS
- Voltage is applied to the cantilever and substrate
- This results in an electro-static field like a capacitor
- The field causes the plate to deflect in an upward or downward motion
- The switch opens and closes completing a circuit path for the RF input

- Click on this picture for animation

## Dual SP2T MEMS Switch

## MEMS Switch Technology

**Significant Performance advantages over Type III & IV semiconductors and SOI at 6 GHz:**
**Lowest insertion loss <(0.40 dB)**
**Best return loss characteristics (>20 dB)**
**Best (on or off) Isolation (>75 dB)**
**Best linearity at Intercept Points (IPs) 2 & 3**
**Easy migration to 10 GHz and beyond.**

## wiSpry Switch Product Evolution 

- RF

- 30 V
- Control

**MEMS**
**Controller**
**DIE**

- 3 V

- 30 V
- Control

- RF

- RF

- RF

- RF

- RF

- 3 V
- 2-bit
- Control

**High Voltage Version**

**Low Voltage Version**

- 30V

- 30V

## 3V Switches with Integrated Chargepump

**Production ‘Low Voltage 3V Packaged Switches**
**3V External, 30V Internal Operation, SP2T, SP4T and SP6T Versions**
**Two Die Solution,- Chargepump and Switch**
**24 pin 5 x 6 x 1.5mm Ceramic QFN SP2T, SP4T**
**32 Pin 5 x 6 x 1.5mm Ceramic QFN SP6T**

## Switched Capacitor Options

**Switched Capacitor Options**

**Continuously variable capacitor**
**Two-state capacitor bank**

**Switched fixed capacitor arrays**

## Digital Capacitor Overview

**Electrostatically Operated Binary State MEMS Capacitor**
**Completely Isolated Digital Control**
**Up (low) and Down (high) Capacitive States**
**Hard Down Stop Provides Precise Control**
**Capacitor Value Controlled by Dielectric Type and Plate Size**
**Each MEMS Capacitor Has a Fixed and a Tunable Portion**
**Array Formed by Selecting Various Capacitor Types**
**Wide Range of Values Achievable, Several Cap Structures Developed**
**Binary Progression of  Capacitor Values provides Compact Structure**

**Binary State MEMS Cap **

## MEMS Capacitor Arrays

- Detail Showing Digital MEMS Capacitor Array

**MEMS Capacitor Array Offers a unique solution for precision tuning in RF Devices**

**MEMS Capacitor Arrays**

## Layout of Capacitor Die

**Shows 2 Capacitors on Die**
**8 Tuning Bits per Cap**
**Central Structure is Fixed Cap**
**Top Pins are Drive,  Bottom RF**

## CMOS Project Status

**Building RF-MEMS in 8 Inch CMOS**
**The basic ingredients for MEMS switched capacitors have been demonstrated.**

## Capacitor Overview Cont

**Future Implementation Will add Control and Driver**
**3.3V External operation **
**Integrated High Voltage Driver and Control**
**Internal Control Multiplexer (e.g. 3/8, 8/64, Serial, I****2****C etc)**

## Overcoming Key MEMS Manufacturing Challenges....

**Overcoming Key MEMS Manufacturing Challenges....**

**WiSPRY Innovation**

**Perceived Issue in  Handsets**

**Notes:**
The main savings in power between UWB and the other technologies is due to the much simpler PHY for UWB; The simple coding scheme should result in a low power consumption radio, and should not require extensive processing. In 802.11a, OFDM processing requires significant amounts of power. In Bluetooth, the combination of frequency hopping and encoding schemes also requires additional power. (KK)

## Next Generation Applications

**Next Generation Applications**

***RF Transceiver with MEMS Components***

**Notes:**
The optical control channel is interpreted to determine changes in the state of the ROADM. The ROADM can be bypassed, both as an default/error condition as well as during channel switching. The bypass switch is a 2x2 MEMS switch. For an electrical in and out, the transceiver and the optical reconfigurability could be combined at lower total cost and with the wavelength totally controlled at the network level with a single locker. If the transceiver is separated from the reconfigurability module, the wavelength of the tunable filter can be locked based on the laser wavelength. Power is obtained from the network powering and/or the customer site.

## Next Generation Applications

**Next Generation Applications**

***Smart Antenna with MEMS Components***

**Notes:**
The optical control channel is interpreted to determine changes in the state of the ROADM. The ROADM can be bypassed, both as an default/error condition as well as during channel switching. The bypass switch is a 2x2 MEMS switch. For an electrical in and out, the transceiver and the optical reconfigurability could be combined at lower total cost and with the wavelength totally controlled at the network level with a single locker. If the transceiver is separated from the reconfigurability module, the wavelength of the tunable filter can be locked based on the laser wavelength. Power is obtained from the network powering and/or the customer site.

## MEMS in Advanced Radio Architectures- Optimized Antenna Matching

**MEMS in Advanced Radio Architectures****- Optimized Antenna Matching**

**Impedance variations**
**On metal surface – impedance / 2**
**Open/closed clamshell**
**Temperature swings**
**10% power reflection ->0.5 dB loss**** **
**Band switching**
**Match shift and optimization**
**Reconfigurable antenna**** **
**Use RF MEMS for variable transformer and/or to implement switchable antenna configuration**

## Future MEMS-Driven Applicatons

**Power control**
**Load matching**
**Frequency matching**

***Dynamic Load Control Tunable Amplifiers***

- Optimum transistor load line at full power
- (3V)2/2 watts = 4.5 ohms
- Optimum transistor load line at 10% power
- (3V)2/0.2 watts = 45 ohms
- High Q MEMS Capacitors adjust output impedance and PA internal matching
- Possibly separate harmonic adjustment
- Maintain efficiency near 50%

## Summary

**Handsets and other Wireless Platforms Require an Increasing Number of Complex Filters and Switches**
**Filters Limit Level of Integration and Cost Reduction**
**Only WiSpry Offers ****High Performance, Tunable Filters and Switches**** That Are**** Integrated with Active Silicon,**** Optimizing Size, Power, Cost and Performance**