# Presentation: 247783

## Ivan Procházka 

Karel Hamal, Brno Sopko, Josef Blazej

Czech Technical University in Prague, 

presented at 

Workshop on Single-Photon: Detectors, Applications and Measurement Methods
National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

- Karel Hamal, Brno Sopko, Josef Blazej
- Czech Technical University in Prague,
*presented at *
*Workshop on Single-Photon: Detectors, Applications and Measurement Methods*
*National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003*

- Recent Achievements
- in Solid State Photon Detector Development
- at the Czech Technical University

## General

- Development of avalanche photodiode structuresfor photon counting, since 1984
- _New materials_Si, Ge, Ge-Si, InGaAs, GaAs, GaP, GaAsP
- _New quenching and gating circuits_
- _New measuring methods_ in optics
_**New / space /applications**_

-    Recent Achievements in Solid State Photon Detector Development
- at the Czech Technical University

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Single Photon Avalanche DiodesSemiconductor materials 

- comunication, cryptography

- laser radar, LIdar

- RTG a XUV
- diagnostics

- spectroscopy

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Single Photon Detectors

- Several examples of SPAD  structures made by CTU

- Si ,100 um,TE cooled

- GaAs  messa

- GaAsP, 350 um

- Active quenching and gating circuit

- Complete detector packages

- 60 mm

- 130 mm

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Single Photon Avalanche Diodes on Si

*K.Hamal et al, CTU since 1984 ** *
*primary goal  **	**MCP replacement in **	**	**	**Satellite Laser Ranging** **	**	**	**	**- active area > 80 um **	**	**	**	**- compact and rugged*
*MILESTONES**first samples **	**	**	**1984**first Satellite Laser Ranging**	**	**1986**routine world - wide use**	**	**1989**200 um chips, TE cooled**	**	**1994**single - multi photon operation**	**1998**space qualified**	**	**	**1995*
*S.Cova (1981) and J. Haitz (1962)** ** *

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

##  Si Single Photon Avalanche Diodes K14 SeriesMain Parameters

-  Planar structure on highly dopped Si
-  shallow junction,  guard ring
-  UBR 		~ 30V, -30 mV / K
-  apertures  	20 -  200 um
-  dark count 	drop 10 x /  -30 K
-   detection area uniformity

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

##  Si Single Photon Avalanche DiodesDetector Package 

- timing resolution, stability	50 ps  FWHM, 1 ps
- dark count			< 10 kHz
- gate risetime	, insulation	< 0.3 ns,   ~ 109
- damage threshold		> 109 Phot /  ns pulses				> direct sunshine CW
- lifetime			> 14 years recorded

- Self-consistent  compact package
- SPAD 200 um, 3 x TE cooled in vacuumcollecting optics  f/D = 1.0
- active quenching and gate circuit
- gated operation
- 40 x 40 x 130 mm, 300 g

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Si SPAD Package with Time Walk CompensationSingle and Multi-Photon Detection 

-  Built in circuit for the multi photontime walk compensation
-  dyn. range   <n> ~ 1 ... 2000 Phot.
-  residual walk < +/- 10 ps
-  timing jitter 20/5 ps   1/1000 Phot.
-  rugged and reliable  no adjustment (~3 years)

- Kirchner et al, 1998

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Si SPAD K14  based T2L2 Detector PackageMulti-Photon Timing

-  Time walk compensated using the analog signal monitor
-  Precision: 15 / 3 ps over the dynamic range 10 - 10ooo Ph.
-  Time stability better than 1 ps over 1000 s
-  Insensitive to the laser pulse width (20 - 200 ps)

- E. Samain et al, CERGA, Grasse, 2002

- 3 ps

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

##  Germanium SPAD 100 um, 77 K Detector Package for 1540 nm

- Ge SPAD, 100 um
- 0.2 - 2.5 V above break
- compact liq.N2 cryostat
- all the electronics built inQE 2-5% @ 1540 nm
- timing resolution 60 ps

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

##  Laser ranging to space objects 

- Si, Ge SPADs used to detect weak optical echoes<ndet > ... 0.001 to 1000 phot./echo 11 wavelengths  355 .... 1540 nm

- operation principle
- 	pulsed optical radar
- range precision
- 	1 .. 3 / mm / shot
- operational range
- 0 - 30 ooo km
- 25 SPAD installations
- on 5 continents

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Time Resolved SpectroscopySi and Ge SPADs

- Time Correlated Photon Counting
- Hight  timing resolution 50 ps FWHM
- Hight quantum efficiencyBroad spectral range

- Detector aperture 100 um=> filters signal in space=> resistant to daylight=> limit of small volumes

- Detectors comparison

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Single Molecules Detection, Si SPAD

- CTU Prague  / Physical Chemistry Inst. University of Heidelberg

- 25 ns window

- Rhodamin dye
- 10E-6 mol/l

- flow

- Laser Induced Fluorescence LIF
- laser  is exciting  organic molecules  v capiláry
- the individual molecules are identified according their fluorescence decay time in a focal micro-volume within  1 ms

- fast gating appreciated

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Optical Time Domain Reflectometry Si, Ge  SPADs

- High time / space resolution  (mm)
- High dynamical range

- University of Heidelberg, Germany
- Slovak Technical University, Bratislava, Slovakia
- Czech Grant Agency

- 40 cm

- Resolution 5 mm

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Si SPADs for Atmospheric Monitoring and Environmental Sensing

**Photon counting LIDAR** for
- metrology and ecology
-  compact eye safe Lidar
-  laser diode transmitter
-  air pollution monitoring
-  atmospheric visibility
-  clouds monitoring

**Air pollution monitoring **for industrial applications
-  optical attenuation
-  high SPAD stability
-  micro - apertures

**Temperature sensor**Raman OTDR in fiber** **
-  geoscience
-  SPAD stability
-  time resolution

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## InGaAs/InP Photon Detectors

- Fujitsu FPD5W1KSø 30 μm

- EG&G C30644ECERø 50 μm

-  GOAL 	high QE photon counting at 1500 nm		communication, cryptography
-  PROBLEM 	APD on InGaAs  (CTU design)
-  SOLUTION	commercial chips
-  OPTIMIZING	active quenching circuit 		operating conditions (temperature, bias..)

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## InGaAs SPAD Detector PackageNew active quenching and gating circuit 

- CO comparatorPF pulse formingMC monostableOR  gate

- ECL 100 k logic,  SMDthreshold 10-15 mVloop delay 2.6ns

- 32x40 mm

-  GOAL		to minimize the charge flowing trough APD in an avalanche		to reduce after-pulsing and hence the dark count rate
-  SOLUTION	new circuit 	high gain/sensitivity				fast (ns delays)

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## InGaAs SPAD Detector PackageOptimizing the Parametersnew circuit, temperature, bias

-  Fujitsu 30 um and EG&G 50 um   => EG&G is less noisy .
-   optimum operating conditions :	- 48o C, 	0.5 V above  br.
-  FWHM 3.2 ns
-  dark < 300 kHz, gated, f>0.1 MHz
-  NEP 7*10-16 W/Hz1/2 @ 1550 nm
-  QE ~ 11% @ 1550 nm

- Optimizing the temperature

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## GaAs, GaP and GaAsP Photon Detectors

- GaAs

- GaAs

-  main properties similar to Si SPADs
-  room temperature operation, conventional quenching circuits
-  dark count rate equal to Si SPADs, drops slowly with temp.

-  GaP,  350 um diameter
-  APPLICATION  in X-ray.
-  high damage threshold in X band
-  QE ~ 14 %  @ 0.15 nm , 40 keV
- GaAs 5V ab.,FWHM = 66 ps

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## 40 keV X-ray Detection by GaP SPADs  

- Detection linearity

- Signal to noise ratio

- Dark count rate

- X - ray lab. test bed

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Si SPADs for Space Applications

- Si SPAD chips are radiation resistant_space qualified_
- The active quenching and gating circuit for both _gated and not-gated operation_ of Si SPADs is available
- the bias circuit fabricated on the same wafer biases the chip within an _extreme temperature range  -80 to +25 C__ _
- low _Mass <  30 g_  	(entire package)
- low _Power < 400 mW_
- low voltage _U<30V_

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Si SPADs for Space Applications

- CTU Prague & IKI Moscow

- MARS 92 (USSR / Russia, 1992-96)	Photon counting laser rangefinder					Mars baloon altimetry NASA Mars Polar Lander, (USA, 1998)	Photon counting Lidar, 							Mars surface atmospheric studies

- S.P.Pershin et all, IKI Russia

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Time Transfer by a Laser Light T2L2

- Si SPAD used to detect the laser pulses  10 -10 ooo photons

- E.Samain et al, OCA, France, Projects ESA, China  TIPO, ASTROD,..

-  ps lasers and timing
-  two way ranging to LEO  => ps clock comparison        inter-continental scale
-  10 cm one way ranging
-   solar system scale
-   celestial mechanics
-   gravity  waves,...

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Available Detectors Summary

- _Si  detector packages_- compact package, 0.25 - 1.1 um, ps timing,- gated, not-gated operation- 20 .. 200 um, TE cooling, low noise,- photon number estimate
- _Ge detector package_- 77 K ,  0.25..1.6 um- 100 um, 1 MHz dark, gated, ps timing,
- _InGaAs_- TE cooling temperatures, 1...1.8 um- 50 um, ns timing, 0.1 MHz gate rates, dark < 300 kHz
- _GaP detectors_- room temperature, X .. 0.8 um- 300 um, ps timing

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Partial List of SPAD Users

-  Communication Research Labs, Tokyo, 		Japan
-  Space Research Institute, Moscow, 			Russia
-  NASA Lockheed Martin, 				USA
-  Electro Optics Systems pty Ltd, Canberra,		Australia
-  BisQuant, Berlin, 					Germany
-  University of Heidelberg, 				Germany
-  University of Bern, 					Swittzerland
-  Space Research Institute, Graz, 			Austria
-  National Environmental Research Council NERC,	UK
-  Federal Bureau for Mapping and Geodesy,		Germany
-  CNRS, Grasse, 					France
-  Chinesse Academy of Sciences, Shanghai, 		China
-  Academy of Surveying and Mapping, Beijin, 		China
-  Naval Observatory of Spain, San Fernando, 		Spain
-  King Abdul City of Science and Technology, 		Saudi Arabia
-  Stanford Linear Accelerator, Stanford, CA		USA

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003

## Future R & D Challenges

- _Si  detector packages_	- new  / space / applications
- _Ge detector package__	__	_- parameters optimization
- _InGaAs_ 			- new commercial chips
- _GaP detectors_ 		- pulsed X ray response
- _Ge - Si (0.4 - 0.6_)		- new technologies 				- near IR, room temperature				- high speed

- I.Prochazka,National Institute of Standards and Technology, Gaitersburg, MD, March 31, 2003