# Jeffrey Y. Tsao -- C.V. - 2008

### Addresses:

Work: Sandia National Laboratories, Albuquerque NM 87122-0601, (505)
844-7092, jytsao@sandia.gov

Home: 12513 Crested Moss Road, ABQ NM 87122, (505) 858-1838

### Personal:

Born 27 May 1955 in Los Angeles, CA. Married, two children. U.S. citizen
with DOE Q-clearance.

### Education:

Harvard University (1977-1981)

PhD in Applied Physics under Professor N Bloembergen (IR Multiphoton
Pumping of Electronically Excited Molecules)

SM in Applied Physics (Major Fields: Quantum Electronics, Solid-State
Physics, Materials Science)

Stanford University (1973-1977)

MS in Electrical Engineering, BS in Mathematics

### Employment:

2001-: Principal Member of Technical Staff, Sandia National Laboratories

2000-2001: Vice-President, Research & Development, E2O Communications

1999-2001: Member, Tecstar Corporation Science Advisory Board

1998-1999: Visiting Lecturer, Institute of Matls Research and
Engineering, Singapore

1991-2000: Manager, Semiconductor Materials/Process Depts
1144/1311/1126, Sandia National Labs

1983-1991: Member of Technical Staff, Sandia National Labs

1981-1983: Member of Technical Staff, MIT-Lincoln Laboratory

1980-1981: Consultant, Tachisto Lasers, Inc.

1978-1981: Research Assistant and Teaching Fellow, Harvard University

### Professional Awards, Accomplishments and Experience:

2008 Major study of the energy economics of lighting and the rebound
effect

2002 Coordinated and edited comprehensive update to U.S. Solid-State
Lighting LED Roadmap

2001 Led long-wavelength VCSEL R&D team at E2O Communications

2000 Materials Research Society Graduate Student Awards Chair (98-) and
Program Committee Member (95-)

1998 Created and taught comprehensive course on Semiconductor Epitaxy at
Natl Univ of Singapore

1997 Led multi-\$M partnerships between Sandia and HP, Motorola, Emcore,
Hughes, TI (92-97)

1996 Catalyzed science-based epi capability at Sandia, leading to
world-record VCSEL and other devices

1996 Elected Fellow of American Physical Society

1995 Co-chaired Spring Materials Research Society Meeting (2,500
attendees)

1994 Sandia and Martin Marietta Author of Year and Martin Marietta
Jefferson Cup Award

1993 Published research monograph on Materials Fundamentals of Molecular
Beam Epitaxy (Academic Press)

### Strengths:

-   Broad technical background, particularly in compound semiconductor
    materials and devices (authored 1 book, co-edited 3 books,
    co-authored over 150 publications, co-invented 8 patents)

-   Creative and strategic thinking in areas of interplay between
    science, technology and applications

-   Mathematical modeling of integrated physical and social phenomena

### References:

Prof Frans Spaepen, Division of Applied Science, Harvard Univ, 29 Oxford
St., Cambridge MA 02138, (617) 495-3760, <spaepen@endor.harvard.edu>

Dr Paul S Peercy, Dean, School of Engineering, U of Wisconsin-Madison, 2
LaPointe Terrace, Madison, WI 53719-3061, (608) 833-0370,
<peercy@engr.wisc.edu>

Dr Hong Q Hou, CEO, Emcore Corp, 10420 Research Road SE, Albuquerque, NM
87123, (505) 332-5007, <hong_hou@emcore.com>

Prof Dan Dapkus, EE and Matls Sci Depts, Univ of Southern Calif, VHE310
University Park, 3651 Watt Way, Los Angeles, CA 90089-0243, (213)
740-4414, <dapkus@usc.edu>

Dr. Jerry A Simmons, Senior Manager, Sandia National Labs, Center 1100,
Albuquerque, NM 87185-1421, (505) 844-8402, <jasimmon@sandia.gov>

# selected Publications

1.  A REVIEW OF LASER MICROCHEMICAL PROCESSING, D.J. Ehrlich and J.Y.
    Tsao, Journal of Vacuum Science and Technology **B1**, 969 (1983).

2.  ASYMMETRIC MELTING AND FREEZING KINETICS IN SILICON, J.Y. Tsao, M.J.
    Aziz, M.O. Thompson, P.S. Peercy, Physical Review Letters 56, 2712
    (1986).

3.  RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC
    FLOW, B.W. Dodson, J. Y. Tsao, Applied Physics Letters
    **[51]{.underline}**, 1325-1327 (1987); and Applied Physics Letters
    **53**, 1128 (1988).

4.  CRITICAL STRESSES FOR SixGe1-x STRAINED-LAYER PLASTICITY, J.Y. Tsao,
    B.W. Dodson, S.T. Picraux, D.M. Cornelison, Physical Review Letters
    **[59]{.underline}**, 2455 (1987).

5.  EXCESS STRESS AND THE STABILITY OF STRAINED HETEROSTRUCTURES, J.Y.
    Tsao, B.W. Dodson, Applied Physics Letters **53**, 848-850 (1988).

6.  LASER MICROFABRICATION: THIN FILM PROCESSES AND LITHOGRAPHY, D.J.
    Ehrlich and J.Y. Tsao, Eds. (Academic Press, NY, 1988).

7.  FUNDAMENTALS OF MOLECULAR BEAM EPITAXY, J.Y. Tsao (Academic Press,
    1993).

8.  A REVIEW OF REFLECTION MASS SPECTROMETRY DURING III/V MBE, J.Y.
    Tsao, Computational Materials Science 6, 140 (1996).

9.  AlGaAs OMVPE IN A ROTATING-DISK REACTOR: THE ANATOMY OF A VCSEL,
    W.G. Breiland, M.E. Coltrin, J. R. Creighton, H.Q. Hou, H.K. Moffat
    and J.Y. Tsao, Materials Science and Engineering Reports R24, 241
    (1999).

10. THE CASE FOR A NATIONAL RESEARCH PROGRAM ON SEMICONDUCTOR
    LIGHTING, R. Haitz, F. Kish, J.Y. Tsao and J.S. Nelson (white paper
    first presented publicly at the 1999 Optoelectronics Industry
    Development Association (OIDA) forum in Washington DC on October 6,
    1999).

11. Light Emitting Diodes (LEDs) for General Illumination, J.Y. Tsao,
    Ed., OIDA Technology Roadmap (Optoelectronics Industry Development
    Association, October, 2002).

12. SOLID-STATE LIGHTING: LAMP TARGETS AND IMPLICATIONS FOR THE
    SEMICONDUCTOR CHIP, J.Y. Tsao, IEEE Circuits & Devices Vol 20, No.
    3, pp. 28-37 (May/June, 2004).

13. RESEARCH CHALLENGES TO ULTRA-EFFICIENT INORGANIC SOLID-STATE
    LIGHTING, J.M. Phillips, M.E. Coltrin, M.H. Crawford, A.J. Fischer,
    M.R. Krames, R. Mueller-Mach, G.O. Mueller, Y. Ohno, L.E.S. Rohwer,
    J.A. Simmons, J.Y. Tsao, Laser and Photonics Reviews 1,
    307-333 (2007) (SAND 2007-5470J).

14. GALILEO'S STREAM: A FRAMEWORK FOR TECHNICAL KNOWLEDGE PRODUCTION,
    J.Y. Tsao, W.B. Gauster, K.W. Boyack, M.E. Coltrin, J.G. Turnley,
    Research Policy 37, 330-352 (2008) (SAND 2006-7622J).

15. THE WORLD'S APPETITE FOR LIGHT: A SIMPLE EMPIRICAL EXPRESSION
    SPANNING THREE CENTURIES AND SIX CONTINENTS, J.Y. Tsao and P. Waide,
    to be submitted to the Energy Journal (SAND 2007-4791J).

# Jeffrey Y. Tsao \-- Biography

Jeff was born in 1955 and raised in Los Angeles, CA. He is a graduate of
Los Alamitos High School, Stanford University (AB in Mathematics, MS in
Electrical Engineering) and Harvard University (MS, PhD in Applied
Physics).

Jeff is currently a Principal Member of Technical Staff at Sandia
National Laboratories, where his work involves integrated science,
technology and economic modeling in Solid-State Lighting and other
areas. He is also exploring network models of knowledge production -- a
new approach to the field of "evolutionary epistemology."

During 2000-2001 Jeff served as Vice-President of R&D at E2O
Communications, Inc., a U.S.-based pre-IPO fiber communications
components company. There, he built and led an R&D team to develop
long-wavelength VCSEL technology for uncooled 1-10Gbps short and
intermediate-reach applications.

During 1996-2000, he was Manager of the Chemical Process Science
Department at Sandia National Laboratories. The focus of that department
was the science and technology of semiconductor fabrication, with a
special emphasis on metal-organic chemical vapor deposition of compound
semiconductors. He has also served as Manager of Sandia's Semiconductor
Materials Department, where he was responsible for developing epitaxial
materials and processes for novel microelectronic and photonic devices
and systems.

In 1998, he took a half-year sabbatical at the Institute of Materials
Research and Engineering (IMRE) in Singapore, where he developed and
gave a series of twelve lectures on compound semiconductor epitaxy that
surveyed the entire field from science and technology all the way to
applications.

His technical interests have evolved from mathematics and electrical
engineering (at Stanford), to quantum electronics and spectroscopy (at
Harvard under Profs Nico Bloembergen, Eli Yablonovitch and Itamar
Burak), to laser-induced surface chemical processing (at Lincoln Lab
working with Dan Ehrlich and co-workers), to ultra-fast thin-film
processing (at Sandia Labs working with Mike Thompson, Paul Peercy, Mike
Aziz and co-workers), to thin-film evolution (at Sandia Labs working
with Tom Picraux, Eric Chason, Brian Dodson and co-workers), to surface
chemistry during MBE (at Sandia labs working with Tom Brennan and
co-workers), to long-wavelength VCSELs (at E2O working with Chan-Long
Shieh, Dan Dapkus and co-workers), to Solid-State Lighting (at Sandia
Labs working with Jerry Simmons, James Gee and co-workers), to science,
technology and engineering "enterprise" modeling (at Sandia working with
Kevin Boyack, Mike Coltrin, Jessica Turnley, Wil Gauster and
co-workers).

Jeff has authored or co-authored over 150 publications: two of them (one
on laser microchemical processing and another on relaxation of strained
semiconductor thin films) are considered "citation classics". He is also
author of the 1993 research monograph "Materials Fundamentals of
Molecular Beam Epitaxy," now a standard reference work, for which he won
one of Martin-Marietta\'s highest corporate awards.

He has been active in the Materials Research Society: he has co-chaired
two symposia, was general co-chair of the Spring 1995 meeting, served
for several years on the program committee, and during 1998-2000
coordinated the graduate student awards. He has also served at various
times on the program committees of the American Vacuum Society
(Electronic Materials and Processing Division), the Electronic Materials
Conference, and the North American MBE Conference. He was elected Fellow
of the American Physical Society in 1996.

As manager of the compound semiconductor materials effort at Sandia in
the mid-1990's, he championed new science-based approaches to epitaxial
growth (e.g., in situ monitoring and process modeling/control), and
catalyzed and oversaw many of Sandia\'s technology partnerships in
compound semiconductor materials. He has had the privilege of hiring
and/or mentoring a series of world-class \"growers,\" all of whom have
gone on to outstanding careers as entrepreneurs, scientists, professors,
or technologists.

He is married and has two children. His wife, Sylvia, is also an applied
physicist (Ph.D from Harvard University) with experience in silicon
microelectronic and MEMS processing. His two sons are Emil, age 17, and
Eugene, age 13. He plays piano (jazz and classical) and racket sports
(tennis, badminton, ping-pong) in his spare time. His other hobbies
include: family historing, science and technology writing; and education
and psychology (he\'s an INFP).

# JOURNAL and magazine ARTICLES

## Science Policy and Management

1.  CONSUMER PREFERENCES AND FUNDING PRIORITIES IN SCIENTIFIC RESEARCH,
    J.Y. Tsao, Science and Public Policy 16, 294-298 (1989).

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16. GALILEO'S STREAM: A FRAMEWORK FOR TECHNICAL KNOWLEDGE PRODUCTION,
    J.Y. Tsao, W.B. Gauster, K.W. Boyack, M.E. Coltrin, J.G. Turnley,
    Research Policy 37, 330-352 (2008) (SAND 2006-7622J).

## Solid-State Lighting

17. ANOTHER SEMICONDUCTOR REVOLUTION: THIS TIME IT\'S LIGHTING!, R.
    Haitz, F. Kish, J.Y. Tsao, J.S. Nelson, Compound Semiconductor
    Magazine 6, 34 (2000).

18. Potential Impact of New Energy Efficiency Technologies on Global
    Climate Change: The Example of Solid-state Lighting, J.M. Gee, J.Y.
    Tsao, T. E. Drennen, Mitigation and Adaptation to Global Change, An
    International Journal Devoted to Scientific, Engineering,
    Socio-Economic and Policy Responses to Environmental Change (2003).

19. The U.S. "LEDs for General Illumination 2002" Roadmap, J.Y. Tsao,
    Laser Focus World pp. S11-S14 (May, 2003).

20. SOLID-STATE LIGHTING: LAMP TARGETS AND IMPLICATIONS FOR THE
    SEMICONDUCTOR CHIP, J.Y. Tsao, IEEE Circuits & Devices Vol 20, No.
    3, pp. 28-37 (May/June, 2004).

21. SEMICONDUCTOR LIGHT SOURCES MOVE FROM THE IR TO THE VISIBLE AND UV,
    Jeff Tsao, Mary Crawford, Jess Wilcoxon and Jerry Simmons, Photonics
    Spectra (January, 2005).

22. BEYOND THE VACUUM TUBE: LIGHTING SOLUTIONS FOR THE 21^ST^ CENTURY,
    J.A. Simmons, M.E. Coltrin and J.Y. Tsao, Optics and Photonics News,
    June, 2007 (SAND 2007-2465).

23. RESEARCH CHALLENGES TO ULTRA-EFFICIENT INORGANIC SOLID-STATE
    LIGHTING, J.M. Phillips, M.E. Coltrin, M.H. Crawford, A.J. Fischer,
    M.R. Krames, R. Mueller-Mach, G.O. Mueller, Y. Ohno, L.E.S. Rohwer,
    J.A. Simmons, J.Y. Tsao, Laser and Photonics Reviews 1,
    307-333 (2007) (SAND 2007-5470J).

24. THE WORLD'S APPETITE FOR LIGHT: A SIMPLE EMPIRICAL EXPRESSION
    SPANNING THREE CENTURIES AND SIX CONTINENTS, J.Y. Tsao and P. Waide,
    to be submitted to the Energy Journal (SAND 2007-4791J).

## Semiconductor Thin Films and Surfaces

25. EFFECTS OF Si/Ge MULTILAYERED STRUCTURES ON Bi PROJECTED RANGE
    DISTRIBUTIONS, S.T. Picraux, J.Y. Tsao, D.K. Brice, Nuclear
    Instruments and Methods in Physics Research B19/20, 21-24 (1987).

26. ION RANGE DISTRIBUTIONS IN MULTILAYERED STRUCTURES: Bi IN Si/Ge,
    J.Y. Tsao, S.T. Picraux, D.K. Brice, A.F. Wright, Journal of Applied
    Physics 62, 513 (1987).

27. RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC
    FLOW, B.W. Dodson, J. Y. Tsao, Applied Physics Letters 51, 1325-1327
    (1987); and Applied Physics Letters 53, 1128 (1988).

28. CRITICAL STRESSES FOR SixGe1-x STRAINED-LAYER PLASTICITY, J.Y. Tsao,
    B.W. Dodson, S.T. Picraux, D.M. Cornelison, Physical Review Letters
    59, 2455 (1987).

29. STABILITY AND METASTABILITY OF SEMICONDUCTOR STRAINED-LAYER
    STRUCTURES, B.W. Dodson, J.Y. Tsao, P.A. Taylor, Superlattices and
    Microstructures 4, 417 (1988).

30. STRUCTURE OF LAYERED CRYSTALS STUDIED BY HIGH ENERGY ION BEAMS, S.T.
    Picraux, L.R. Dawson, J.Y. Tsao, B.L. Doyle, S.R. Lee, Nuclear
    Instruments and Methods in Physics Research B33, 891 (1988).

31. STRESS DEPENDENCE OF DISLOCATION DYNAMICS IN SINGLE-CRYSTAL
    SILICON-GERMANIUM ALLOYS UP TO 2.6 Gap, B.W. Dodson, J.Y. Tsao,
    Physical Review B38, 12383 (1988).

32. REFLECTION MASS SPECTROMETRY OF As INCORPORATION DURING GaAs
    MOLECULAR BEAM EPITAXY, J.Y. Tsao, T.M. Brennan, B.E. Hammons,
    Applied Physics Letters 53, 288-290 (1988).

33. EXCESS STRESS AND THE STABILITY OF STRAINED HETEROSTRUCTURES, J.Y.
    Tsao, B.W. Dodson, Applied Physics Letters 53, 848-850 (1988).

34. NON-NEWTONIAN STRAIN RELAXATION IN HIGHLY STRAINED SiGe
    HETEROSTRUCTURES, B.W. Dodson, J.Y. Tsao, Applied Physics Letters
    53, 2498-2500 (1988).

35. STABILITY OF STRAINED QUANTUM-WELL FIELD-EFFECT TRANSISTOR
    STRUCTURES, P.S. Peercy, B.W. Dodson, J.Y. Tsao, E.D. Jones, D.R.
    Myers, T.E. Zipperian, L.R. Dawson, R.M. Biefeld, J.F. Klem, C.R.
    Hills, IEEE Electron Device Letters 9, 621-623 (1988).

36. ONLINE DETERMINATION OF ALLOY COMPOSITION DURING TERNARY III/V
    MOLECULAR BEAM EPITAXY, J.Y. Tsao, T.M. Brennan, J.F. Klem, B.E.
    Hammons, Applied Physics Letters 55, 777-779 (1989).

37. DIMER STRINGS, ANISOTROPIC GROWTH, AND PERSISTENT LAYER-BY-LAYER
    EPITAXY, J.Y. Tsao, E. Chason, U. Koehler, R. Hamers, Physical
    Review B40, 11951-11954 (1989).

38. PARTITIONING OF ION-INDUCED SURFACE AND BULK DISPLACEMENTS, D.K.
    Brice, J.Y. Tsao, S.T. Picraux, Nuclear Instruments and Methods in
    Physics Research B44, 68-78 (1989).

39. DYNAMICS OF GROWTH ROUGHENING AND SMOOTHENING ON Ge(001), E. Chason,
    J.Y. Tsao, K.M. Horn, S.T. Picraux, Journal of Vacuum Science and
    Technology B7, 332-336 (1989).

40. SCALING RELATIONS FOR STRAINED-LAYER RELAXATION, B.W. Dodson, J.Y.
    Tsao, Applied Physics Letters 55, 1345-1347 (1989).

41. SURFACE-STOICHIOMETRY DEPENDENCE OF As2 DESORPTION AND As4
    \"REFLECTION\" FROM GaAs(001), J.Y. Tsao, T.M. Brennan, J.F. Klem,
    B.E. Hammons, Journal of Vacuum Science and Technology A7, 2138-2142
    (1989).

42. APPLICATION OF REFLECTION MASS SPECTROMETRY TO MOLECULAR-BEAM
    EPITAXIAL GROWTH OF InAlAs AND InGaAs, T.M. Brennan, J.Y. Tsao, B.E.
    Hammons, J.F. Klem, E.D. Jones, Journal of Vacuum Science and
    Technology B7, 277-282 (1989).

43. APPLICATION OF REFLECTION MASS SPECTROMETRY (REMS) TO THE MBE GROWTH
    OF InAlAs AND InGaAs, T.M. Brennan, J.Y. Tsao, B.E. Hammons, J.F.
    Klem, E.D. Jones, Journal of Electronic Materials 17, S14 (1988)

44. LOW-ENERGY ION BEAMS, MOLECULAR BEAM EPITAXY, AND SURFACE
    MORPHOLOGY, J.Y. Tsao, E. Chason, K.M. Horn, D.K. Brice, S.T.
    Picraux, Nuclear Instruments and Methods in Physics Research B39,
    72-80 (1989).

45. SURFACE ROUGHENING OF Ge(001) DURING 200 eV Xe ION BOMBARDMENT AND
    Ge MOLECULAR BEAM EPITAXY, E. Chason, J.Y. Tsao, K.M. Horn, S.T.
    Picraux, H.A. Atwater, Journal of Vacuum Science and Technology A8,
    2507-2511 (1990).

46. TIME, TEMPERATURE AND EXCESS STRESS: RELAXATION IN STRAINED
    HETEROSTRUCTURES, J.Y. Tsao, B.W. Dodson, Surface Science 228,
    260-266 (1990).

47. ION BEAM ENHANCED EPITAXIAL GROWTH OF Ge(001), E. Chason, P.
    Bedrossian, K.M. Horn, J.Y. Tsao, S.T. Picraux, Applied Physics
    Letters 57, 1793-1795 (1990).

48. NEAR-THRESHOLD ENERGY DEPENDENCE OF Xe-INDUCED DISPLACEMENTS ON
    Ge(001), S.T. Picraux, D.K. Brice, K.M. Horn, J.Y. Tsao, E. Chason,
    Nuclear Instruments and Methods in Physics Research B48, 414-418
    (1990).

49. ADATOMS, STRINGS AND EPITAXY ON SINGULAR SURFACES, E. Chason, J.Y.
    Tsao, Surface Science 234, 361-370 (1990).

50. HYDROGEN ION BEAM SMOOTHENING OF Ge(001), K.M. Horn, J.Y. Tsao, E.
    Chason, D.K. Brice, S.T. Picraux, Journal of Applied Physics 69,
    243-249 (1991).

51. PHASE EQUILIBRIA DURING InSb MOLECULAR BEAM EPITAXY, J.Y. Tsao,
    Journal of Crystal Growth 110, 595 (1991).

52. OSCILLATORY As4 INCORPORATION RATES DURING MOLECULAR BEAM EPITAXY OF
    AlAs, GaAs AND InAs, J.Y. Tsao, T.M. Brennan, B.E. Hammons, Journal
    of Crystal 111, 125 (1991).

53. SIMULATIONS OF LAYER-BY-LAYER SPUTTERING DURING EPITAXY, E.
    Chason, P. Bedrossian, J. E. Houston, J.Y. Tsao, B.W. Dodson (1153)
    and S.T. Picraux, Applied Physics Letters 59, 3533 (1991).

54. LAYER-BY-LAYER SPUTTERING AND EPITAXY OF Si(100), P.
    Bedrossian, J. E. Houston, J.Y. Tsao, E. Chason, S.T. Picraux,
    Physical Review Letters 67, 124-127 (1991).

55. THERMAL DESORPTION OF InSb SURFACE OXIDES, J.F. Klem, J.Y.
    Tsao, J. L. Reno, A. Datye, S. Chadda, Journal of Vacuum Science and
    Technology A9, 2996 (1991).

56. REACTIVE STICKING OF As4 DURING MOLECULAR BEAM HOMOEPITAXY OF GaAs,
    AlAs AND InAs, T.M. Brennan, J.Y. Tsao, B.E. Hammons, Journal of
    Vacuum Science and Technology A10, 33 (1992).

57. GRAPHICAL REPRESENTATION OF Ag-Au SURFACE SEGREGATION, J.Y. Tsao,
    Surface Science 262, 382 (1992).

58. LATERAL MOTION OF TERRACE WIDTH DISTRIBUTIONS DURING STEP-FLOW
    GROWTH, S. A. Chalmers, J.Y. Tsao, A.C. Gossard, Applied Physics
    Letters 61, 645 (1992).

59. COMPOSITIONAL NON-UNIFORMITIES AND STRAIN RELAXATION AT MISORIENTED
    InGaAs/GaAs INTERFACES, N. D. Zakharov, P. Werner, Y. Chen, W.
    Swider, Z. LilientalWeber, J. Washburn, J. Klem, J.Y. Tsao, Journal
    of Electronic Materials 22, 1341 (1993).

60. INTERFACIAL DEFECTS AND MORPHOLOGY OF InGaAs EPITAXIAL LAYERS GROWN
    ON TILTED GaAs SUBSTRATES, Z. LilientalWeber, Y. Chen, P. Werner, N.
    Zakharov, W. Swider, J. Washburn, J.F. Klem, J.Y. Tsao, Journal of
    Vacuum Science and Technology B11, 1379 (1993).

61. TERRACE WIDTH EVOLUTION DURING STEP-FLOW GROWTH WITH MULTI-TERRACE
    ADATOM MIGRATION, S. A. Chalmers, J.Y. Tsao, A.C. Gossard, Journal
    of Applied Physics 73, 7351 (1993).

62. STRESS RELEASING MECHANISMS IN InGaAs LAYERS GROWN ON MISORIENTED
    GaAs(001) SUBSTRATE, P. Werner, N. D. Zakharov, Y. Chen, Z.
    Liliental-Weber, J. Washburn, J.F. Klem, J.Y. Tsao, Applied Physics
    Letters 62, 2798 (1993).

63. STRUCTURE AND LOCATION OF MISFIT DISLOCATIONS IN InGaAs EPILAYERS
    GROWN ON VICINAL GaAs (001) SUBSTRATES, Y. Chen, N. D. Zakharov, P.
    Werner, Z. LilientalWeber, J. Washburn, J.F. Klem, J.Y. Tsao,
    Applied Physics Letters 62, 1536 (1993).

64. NONCONSERVATIVE FORMATION OF \<100\> MISFIT DISLOCATION ARRAYS AT
    InGaAs/GaAs(001) INTERFACES DURING POST-GROWTH ANNEALING, Y.
    Chen, Z. LilientalWeber, J. Washburn, J.F. Klem, J.Y. Tsao, Applied
    Physics Letters 63, 2234 (1993).

65. OXYGEN ROUGHENING OF GE (001) SURFACES, K.M. Horn, E. Chason, J.Y.
    Tsao, J.A. Floro, S.T. Picraux, Surface Science 320, 174 (1994).

66. NUCLEATION OF MISFIT DISLOCATIONS IN InGaAs EPILAYERS GROWN ON GaAs
    SUBSTRATES, Y. Chen, Z. LilientalWeber, J. Washburn, J.F. Klem, J.Y.
    Tsao, Applied Physics Letters 66, 499 (1995).

67. X-RAY RECIPROCAL-SPACE MAPPING OF STRAIN RELAXATION AND TILTING IN
    LINEARLY GRADED InAlAs BUFFERS, J. A. Olsen, E.L. Hu, S.R. Lee, I.J.
    Fritz, A. J. Howard, B.E. Hammons, J.Y. Tsao, Journal of Applied
    Physics 79, 3578 (1996).

68. DISLOCATION FORMATION MECHANISM IN STRAINED In~x~Ga~1-x~As ISLANDS
    GROWN ON GaAs(001) SUBSTRATES, Y. Chen, Z. Liliental-Weber, J.
    Washburn, J.F. Klem, J.Y. Tsao, Applied Physics Letters 66, 499
    (1995).

## Rapid Solidification

69. TIME -RESOLVED MEASUREMENTS OF STIMULATED SURFACE POLARITON WAVE
    SCATTERING AND GRATING FORMATION IN PULSED-LASER-ANNEALED GERMANIUM,
    D.J. Ehrlich, S.R.J. Brueck, J.Y. Tsao, Applied Physics Letters 41,
    630 (1982).

70. EFFECTS OF AS IMPURITIES ON THE SOLIDIFICATION VELOCITY OF Si DURING
    PULSED LASER ANNEALING, P.S. Peercy, M.O. Thompson, J.Y. Tsao,
    Applied Physics Letters 47, 244 (1985).

71. RAPID SOLIDIFICATION STUDIES OF A MODEL ALLOY SYSTEM, M.O. Thompson,
    P.S. Peercy, J.Y. Tsao, M.J. Aziz, Applied Physics Letters 49, 558
    (1986).

72. ASYMMETRIC MELTING AND FREEZING KINETICS IN SILICON, J.Y. Tsao, M.J.
    Aziz, M.O. Thompson, P.S. Peercy, Physical Review Letters 56, 2712
    (1986).

73. EXPLOSIVE CRYSTALLIZATION IN AMORPHOUS Si INITIATED BY LONG
    PULSEWIDTH LASER IRRADIATION, P.S. Peercy, J.Y. Tsao, S. R.
    Stiffler, M.O. Thompson, Applied Physics Letters 52, 203 (1988).

74. SOLUTE TRAPPING: COMPARION OF THEORY WITH EXPERIMENT, M.J. Aziz,
    J.Y. Tsao, M.O. Thompson, P.S. Peercy, C.W. White, Physical Review
    Letters 56, 2489 (1986).

75. SURFACE SOLIDIFICATION AND IMPURITY SEGREGATION IN AMORPHOUS
    SILICON, P.S. Peercy, J.M. Poate, M.O. Thompson, J.Y. Tsao, Applied
    Physics Letters 48, 1651 (1986).

76. DIRECT MEASUREMENTS OF LIQUID/SOLID INTERFACE KINETICS DURING
    PULSED-LASER-INDUCED MELTING OF ALUMINUM, J.Y. Tsao, S.T. Picraux,
    P.S. Peercy, M.O. Thompson, Applied Physics Letters 48, 278 (1986).

77. INTERFACIAL OVERHEATING DURING MELTING OF Si AT 190 m/s, J.Y. Tsao,
    P.S. Peercy, M.O. Thompson, J. Mater. Res. 2, 91 (1987).

78. CRYSTALLIZATION INSTABILITY AT THE AMORPHOUS-SILICON/LIQUID-SILICON
    INTERFACE, J.Y. Tsao, P.S. Peercy, Physical Review Letters 58, 2782
    (1987).

79. EVIDENCE AGAINST SURFACE NUCLEATION FOLLOWING PULSED MELTING OF Si,
    P.S. Peercy, J.Y. Tsao, M.O. Thompson, Journal of Materials Research
    5, 1463 (1990).

80. EFFECT OF NONEQUILIBRIUM INTERFACE KINETICS ON CELLULAR BREAKDOWN OF
    PLANAR INTERFACES DURING RAPID SOLIDIFICATION OF Si-Sn, D.E.
    Hoglund, M.J. Aziz, S.R. Stiffler, M.O. Thompson, J.Y. Tsao, P.S.
    Peercy, Journal of Crystal Growth 109, 107 (1991).

## Laser-Induced Surface Chemistry

81. FABRICATION OF THROUGH-WAFER VIA CONDUCTORS IN Si BY LASER
    PHOTOCHEMICAL PROCESSING, D.J. Ehrlich, D.J. Silversmith, R.W.
    Mountain, J.Y. Tsao, IEEE Trans. Components, Hybrids, and
    Manufacturing Technology CHMT-5, 520 (1982).

82. DIRECT-WRITE METALLIZATION OF Si MOSFETs USING LASER
    PHOTODEPOSITION, J.Y. Tsao, D.J. Ehrlich, D.J. Silversmith, R.W.
    Mountain, Electron Device Letters EDL-3, 164 (1982).

83. SUBMICROMETER-LINEWIDTH DOPING AND RELIEF DEFINITION IN SILICON BY
    LASER-CONTROLLED DIFFUSION, D.J. Ehrlich, J.Y. Tsao, Applied Physics
    Letters 41, 297 (1982).

84. PHOTODEPOSITION OF Ti AND APPLICATION TO DIRECT WRITING OF Ti:
    LiNbO3 WAVEGUIDES, J.Y. Tsao, R.A. Becker, D.J. Ehrlich, F.J.
    Leonberger, Applied Physics Letters 42, 559 (1983).

85. UV-LASER PHOTOPOLYMERIZATION OF VOLATILE SURFACE-ADSORBED METHYL
    METHACRYLATE, J.Y. Tsao, D.J. Ehrlich, Applied Physics Letters 42,
    997 (1983).

86. LASER-CONTROLLED CHEMICAL ETCHING OF ALUMINUM, J.Y. Tsao, D.J.
    Ehrlich, Applied Physics Letters 43, 146 (1983).

87. LASER MICROCHEMICAL PROCESSING: SPATIAL RESOLUTION AND RATE LIMITS
    OF OPTICAL DIRECT-WRITING TECHNIQUES, D.J. Ehrlich, J.Y. Tsao,
    Microcircuit Engineering 83, 429-438, Academic Press, London (1983).

88. NONRECIPROCAL LASER-MICROCHEMICAL PROCESSING: SPATIAL RESOLUTION
    LIMITS AND DEMONSTRATION OF 0.2-µm LINEWIDTHS, D.J. Ehrlich, J.Y.
    Tsao, Applied Physics Letters 44, 267 (1984).

89. DEEP UV EXPOSURE OF Ag2Se/GeSe2 UTILIZING AN EXCIMER LASER, K. J.
    Polasko, D.J. Ehrlich, J.Y. Tsao, R.F.W. Pease, E.E. Marinero, IEEE
    Electron Dev. Letters EDL-5, 24 (1984).

90. LASER MICROCHEMICAL TECHNIQUES FOR REVERSIBLE RESTRUCTURING OF
    GATE-ARRAY PROTOTYPE CIRCUITS, D.J. Ehrlich, J.Y. Tsao, D.J.
    Silversmith, J.H.C. Sedlacek, R.W. Mountain, W.S. Graber, IEEE
    Electron Dev. Letters EDL-5, 32 (1984).

91. UV-LASER PHOTODEPOSITION FROM SURFACE-ADSORBED MIXTURES OF
    TRIMETHYLALUMINUM AND TITANIUM TETRACHLORIDE, J.Y. Tsao, D.J.
    Ehrlich, Journal of Chemical Physics 81, 4620 (1984).

92. PATTERNED PHOTONUCLEATION OF CHEMICAL VAPOR DEPOSITION OF Al BY
    UV-LASER PHOTODEPOSITION, J.Y. Tsao, D.J. Ehrlich, Applied Physics
    Letters 45, 617 (1984).

93. LASER-CHEMICAL MODIFICATION OF NUCLEATION BARRIERS FOR
    AREA-SELECTIVE THIN FILM GROWTH, J.Y. Tsao, D.J. Ehrlich, Journal of
    Crystal Growth 68, 176-187 (1984).

94. UV LASER PHOTODEPOSITION OF PATTERNED CATALYST FILMS FROM ADSORBATE
    MIXTURES, D.J. Ehrlich, J.Y. Tsao, Applied Physics Letters 46, 198
    (1985).

95. MEASUREMENT OF SURFACE DIFFUSION BY LASER-BEAM-LOCALIZED SURFACE
    PHOTOCHEMISTRY, J.Y. Tsao, H. J. Zeiger, D.J. Ehrlich, Surface
    Science 160, 419-442 (1985).

96. TECHNIQUE FOR MEASURING SURFACE DIFFUSION BY LASER-BEAM-LOCALIZED
    SURFACE PHOTOCHEMISTRY, H. J. Zeiger, J.Y. Tsao, D.J. Ehrlich,
    Journal of Vacuum Science and Technology B3, 1436 (1985).

97. LASER-MICROCHEMICAL REACTIONS FOR MASKLESS DEVICE PROCESSING:
    SURFACE MODIFICATIONS FOR SELECTED-AREA GROWTH, D.J. Ehrlich, J.Y.
    Tsao, Proceedings of the 31st National Symposium of the American
    Vacuum Society (Journal of Vacuum Science and Technology A3, 904
    (1985).

98. LASER-LOCALIZED SELECTIVE ETCHING AND APPLICATION TO ALUMINUM, J.Y.
    Tsao, D.J. Ehrlich, Journal of the Electrochemical Society 132, C356
    (1985).

99. SUBMICROMETER PATTERNING BY PROJECTED EXCIMER-LASER-BEAM INDUCED
    CHEMISTRY, D.J. Ehrlich, J.Y. Tsao, C.O. Bozler, Journal of Vacuum
    Science and Technology B3, 1 (1985).

100. REPAIR OF X-RAY LITHOGRAPHY MASKS USING UV-LASER
     PHOTODEPOSITION, J. N. Randall, D.J. Ehrlich, J.Y. Tsao, Journal of
     Vacuum Science and Technology B3, 262 (1985).

101. LASER-CONTROLLED WET CHEMICAL ETCHING FOR CORRECTIVE TRIMMING OF
     THIN FILMS, J.Y. Tsao, D.J. Ehrlich, Journal of the Electrochemical
     Society 133, 2244 (1986).

102. STRUCTURE OF LAYERED CRYSTALS STUDIED BY HIGH ENERGY ION BEAMS,
     S.T. Picraux, L.R. Dawson, J.Y. Tsao, B.L. Doyle, S.R. Lee, Nuclear
     Instruments and Methods in Physics Research B33, 891-897 (1988).

## Lasers, Spectroscopy and Nonlinear Optics

103. DIGITAL FEEDBACK STABILIZATION OF A SINGLE-AXIAL-MODE CO2 TEA
     LASER, J.Y. Tsao, R.C. Sharp, E. Yablonovitch, Reviews of
     Scientific Instruments 50, 1023 (1979).

104. MULTIPHOTON VIBRATIONAL PUMPING OF OPTICALLY PREPARED NO2
     MOLECULES, I. Burak, J.Y. Tsao, Y. Prior, E. Yablonovitch, Chemical
     Physics Letters 68, 31 (1979).

105. OBSERVATION OF DIRECT IR MULTIPHOTON PUMPING OF THE TRIPLET
     MANIFOLD OF BIACETYL, J.Y. Tsao, J.G. Black. E. Yablonovitch, I.
     Burak, Journal of Chemical Physics 73, 2076 (1980).

106. MULTIPHOTON VIBRATIONAL PUMPING OF OPTICALLY PREPARED NO2
     MOLECULES, I. Burak, J.Y. Tsao, Y. Prior, E. Yablonovitch,
     Relaxation of Elementary Excitations 206-211, R. Kubo and E.
     Hanamura, Eds., Springer-Verlag, Berlin (1980).

107. EMITTER LIFETIME AND VELOCITY DISTRIBUTION IN THE IR MULTIPHOTON
     INDUCED LUMINESCENCE OF CHROMYL CHLORIDE, I. Burak, J.Y. Tsao,
     Chemical Physics Letters 77, 536 (1981).

108. THE ORIGIN OF THE INFRARED MULTIPHOTON INDUCED LUMINESCENCE OF
     CHROMYL CHLORIDE, J.Y. Tsao, N. Bloembergen, I. Burak, Journal of
     Chemical Physics 75, 1 (1981).

109. THE DYNAMICS OF THE INFRARED MULTIPHOTON PUMPING OF OPTICALLY
     EXCITED NO2 MOLECULES, J.Y. Tsao, T.B. Simpson, N. Bloembergen, I.
     Burak, Journal of Chemical Physics 77, 1274 (1982).

110. GENERATION OF 1.6 ns RUBY LASER PULSES BY PASSIVE Q-SWITCHING, J.Y.
     Tsao, Optics Communications 60, 225 (1986).

111. PRACTICAL CONSTRAINTS ON SOURCES FOR PULSED BEAM LITHOGRAPHIES,
     J.Y. Tsao, S.T. Picraux, R.W. Light, W.W. Hsing, Microelectronic
     Engineering, (1988).

112. VCSEL-BASED OPTICAL DATA LINKS, Wenbin Jiang and J.Y. Tsao, SPIE
     Newsletter, March, 2001.

## Miscellaneous

113. TUNGSTEN DEPOSITION ON POROUS SILICON FOR FORMATION OF BURIED
     CONDUCTORS IN SINGLE CRYSTAL SILICON, S. S. Tsao, R. S. Blewer,
     J.Y. Tsao, Applied Physics Letters 49, 403-405 (1986).

114. TRANSITION-STATE THEORY FOR QUANTUM AND CLASSICAL PARTICLE ESCAPE
     FROM A FINITE SQUARE WELL, J.Y. Tsao, American Journal of Physics
     57, 269 (1989).

115. TWO SEMIEMPIRICAL EXPRESSIONS FOR CONDENSED-PHASE HEAT CAPACITIES,
     J.Y. Tsao, Journal of Applied Physics 68, 1928-1930 (1990).

116. NEAR INFRARED HIGH-GAIN STRAINED LAYER InGaAs HETEROJUNCTION
     PHOTOTRANSISTORS: RESONANT PERIODIC ABSORPTION, R.P. Bryan, G.R.
     Olbright, W.S. Fu, T.M. Brennan, J.Y. Tsao, Applied Physics Letters
     59, 1600 (1991).

# BOOKS, BOOK CHAPTERS, REVIEW ARTICLES

117. VLSI ELECTRONICS: MICROSTRUCTURE SCIENCE, Vol. 7, Chapter 3, D.J.
     Ehrlich and J.Y. Tsao, Academic, New York (1983).

118. A REVIEW OF LASER MICROCHEMICAL PROCESSING, D.J. Ehrlich and J.Y.
     Tsao, The Journal of Vacuum Science and Technology B1, 969 (1983).

119. LASER PHOTOREACTIONS OF VOLATILE SURFACE-ADSORBED MOLECULES, D.J.
     Ehrlich, J.Y. Tsao, Surface Studies with Lasers, 171-176, F.R.
     Aussenegg, A. Leitner and M.E. Lippitsch, Editors, Springer-Verlag,
     Berlin (1983).

120. LASER DIRECT-WRITING APPLICATIONS, D.J. Ehrlich, J.Y. Tsao, Laser
     Processing and Diagnostics 39, Springer Series in Chemical
     Physics, D. Bauerle, Ed., Springer-Verlag, Berlin (1984).

121. LASERS IN MICROLITHOGRAPHY, D.J. Ehrlich, J.Y. Tsao and J.S.
     Batchelder, Eds., Proceedings of SPIE, The International Society
     for Optical Engineering, 774, Santa Clara, CA, 3/2-3/87.

122. LASER MICROFABRICATION: THIN FILM PROCESSES AND LITHOGRAPHY, D.J.
     Ehrlich and J.Y. Tsao, Eds. (Academic Press, NY, 1988).

123. TRANSPORT AND KINETICS, H. J. Zeiger, J.Y. Tsao and D.J. Ehrlich,
     Laser Microfabrication: Thin Film, Processes and Lithography, D.J.
     Ehrlich and J.Y. Tsao, Eds. (Academic Press, NY, 1988).

124. PHOTOPHYSICS AND THEMOPHYSICS OF LIGHT ABSORPTION AND ENERGY
     TRANSPORT IN SOLIDS, C. I. H. Ashby and J.Y. Tsao, Laser
     Microfabrication: Thin Film Processes and Lithography, D.J. Ehrlich
     and J.Y. Tsao, Eds. (Academic Press, NY, 1988).

125. STRUCTURAL RELAXATION IN METASTABLE STRAINED-LAYER SEMICONDUCTORS,
     B.W. Dodson and J.Y. Tsao, Annual Reviews of Materials Science 19,
     419-437 (1989).

126. EVOLUTION OF THIN-FILM AND SURFACE MICROSTRUCTURE, C.V. Thompson,
     J.Y. Tsao, D. J. Srolvitz, Eds., Proceedings of the Fall 1990
     Materials Research Socitey Meeting 202, Boston, MA, 11/26-12/1/90.

127. STRUCTURE AND CHARACTERIZATION OF STRAINED-LAYER SUPERLATTICES,
     S.T. Picraux, B.L. Doyle and J.Y. Tsao, Semiconductor and
     Semimetals 33, 139-221 (1991).

128. FUNDAMENTALS OF MOLECULAR BEAM EPITAXY, J.Y. Tsao (Academic Press,
     1993).

129. COMMON THEMES AND MECHANISMS OF EPITAXIAL GROWTH, P. Fuoss, J.Y.
     Tsao, D. W. Kisker, A. Zangwill, T. Kuech, Eds., Proceedings of the
     Spring 1993 Materials Research Society Meeting, 312, San Francisco,
     CA, 4/13-15/93.

130. SANDIA\'S CENTER FOR COMPOUND SEMICONDUCTOR TECHNOLOGY, J.Y. Tsao,
     III-Vs Review, Vol. 7, No. 1, 31-34 (1994).

131. A REVIEW OF REFLECTION MASS SPECTROMETRY DURING III/V MBE, J.Y.
     Tsao, Computational Materials Science 6, 140 (1996).

132. SEMICONDUCTORS, J.Y. Tsao, Encyclopedia of the Future (5/1996).

133. AlGaAs OMVPE IN A ROTATING-DISK REACTOR: THE ANATOMY OF A VCSEL,
     W.G. Breiland, M.E. Coltrin, J. R. Creighton, H.Q. Hou, H.K. Moffat
     and J.Y. Tsao, Materials Science and Engineering Reports R24, 241
     (1999).

134. Book Review of "Introduction to Solid State Lighting", J.Y. Tsao,
     MRS Bulletin Vol 28 No 4, pp. 322-323 (April, 2003).

135. INTERNATIONAL TRENDS IN SOLID-STATE LIGHTING: ANALYSIS OF THE
     ARTICLE AND PATENT LITERATURE, K.W. Boyack, J.Y. Tsao, A. Miksovic
     and M. Huey, to be published as a chapter in I. Ferguson and N.
     Narendran, eds., Solid-State Lighting and Illumination (SPIE,
     2007).

# proceedings

136. SUBMICROMETER-LINEWIDTH LASER DOPING, J.Y. Tsao, D.J. Ehrlich,
     Materials Research Society Symposium Proceedings 17, 235-241,
     North-Holland, NY (1983).

137. LASER FABRICATION OF MICROSTRUCTURES: EFFECT OF GEOMETRICAL SCALING
     ON CHEMICAL REACTION RATES, D.J. Ehrlich, J.Y. Tsao, Materials
     Research Society Symposium Proceedings 17, 3-8, North-Holland, NY
     (1983).

138. SURFACE ELECTROMAGNETIC WAVES IN LASER MATERIAL INTERACTIONS, D.J.
     Ehrlich, S.R.J. Brueck, J.Y. Tsao, Materials Research Society
     Symposium Proceedings 13, 191-196, North-Holland, NY, (1983).

139. RECENT ADVANCES IN UV LASER PHOTODEPOSITION, J.Y. Tsao, D.J.
     Ehrlich, Materials Research Society Symposium Proceedings 29,
     115-126, North-Holland, NY (1983).

140. LASER DIRECT WRITE TECHNOLOGIES AS TOOLS FOR GATE-ARRAY
     DEVELOPMENT, D.J. Silversmith, D.J. Ehrlich, J.Y. Tsao, R.W.
     Mountain, J.H.C. Sedlacek, Materials Research Society Symposium
     Proceedings 29, 55-60, North-Holland, NY (1983).

141. SPATIAL RESOLUTION LIMITS OF LASER PATTERNING: SUBMICROMETER
     PROJECTION MICROCHEMISTRY, D.J. Ehrlich, J.Y. Tsao, Materials
     Research Society Symposium Proceedings 29, 195-200, North-Holland,
     NY (1983).

142. RECONFIGURING SEMI-CUSTOM ICs USING LASER-MICROCHEMICAL TECHNIQUES,
     W.S. Graber, D.J. Ehrlich, J.Y. Tsao, D.J. Silversmith, J.H.C.
     Sedlacek, R.W. Mountain, Proceedings of the IEEE Custom Integrated
     Circuits Conference, Rochester, NY, 5/21-23/83.

143. SURFACE AND GAS PROCESSES IN PHOTODEPOSITION IN SMALL ZONES, J.Y.
     Tsao, D.J. Ehrlich, Proceedings of SPIE 459, 2-8 (1984).

144. ELECTROMAGNETICALLY-INDUCED SURFACE MICROSTRUCTURES AND ENHANCED
     FIELD EFFECTS IN LASER PROCESSING, S.R.J. Brueck, D.J.
     Ehrlich, D. V. Murphy, J.Y. Tsao, Materials Research Society
     Symposium Proceedings 29, 295-300, North-Holland, NY (1984).

145. A TEST OF TWO SOLUTE-TRAPPING MODELS, M.J. Aziz, J.Y. Tsao, M.O.
     Thompson, P.S. Peercy, C.W. White, W.H. Christie, Materials
     Research Society Symposium Proceedings 35, 153-158 (1985).

146. EFFECTS OF ARSENIC DOPING ON THE SOLIDIFICATION DYNAMICS OF
     PULSED-LASER-MELTED SILICON, M.O. Thompson, P.S. Peercy, J.Y. Tsao,
     Materials Research Society Symposium Proceedings 35, 169-174
     (1985).

147. NUCLEATION OF INTERNAL MELT DURING PULSED LASER IRRADIATION, P.S.
     Peercy, M.O. Thompson, J.Y. Tsao, J.M. Poate, Materials Research
     Society Symposium Proceedings 51, 125-130 (1985).

148. TRANSIENT CONDUCTANCE MEASUREMENTS AND HEAT-FLOW ANALYSIS OF
     PULSED-LASER-INDUCED MELTING OF ALUMINUM THIN FILMS, J.Y. Tsao,
     S.T. Picraux, P.S. Peercy, M.O. Thompson, Materials Research
     Society Symposium Proceedings 51, 283-288 (1986).

149. DYNAMICS OF RAPID SOLIDIFICATION IN SILICON, P.S. Peercy, M.O.
     Thompson and J.Y. Tsao, Materials Research Society Symposium
     Proceedings 74, 15-30 (1987).

150. TRANSITION-STATE MODEL FOR ENTROPY-LIMITED FREEZING, J.Y. Tsao,
     M.J. Aziz, P.S. Peercy and M.O. Thompson, Materials Research
     Society Symposium Proceedings 74, 117-122 (1987).

151. INTERFACE VELOCITY TRANSIENTS DURING MELTING OF a-Si/c-Si Thin
     Films, J.Y. Tsao, M.J. Aziz, P.S. Peercy, M.O. Thompson, Materials
     Research Society Symposium Proceedings 100 (1988).

152. NUCLEATION INSTABILITIES AT MOVING LIQUID/SOLID INTERFACES, J.Y.
     Tsao, P.S. Peercy, Bulletin of the American Physical Society 32,
     455-456 (1987).

153. STABILITY DIAGRAMS FOR EPITAXIAL STRAINED LAYERS, J.Y. Tsao, B.W.
     Dodson, S.T. Picraux, Materials Research Society Symposium
     Proceedings 103, 153 (1988).

154. RELAXATION OF METASTABLE SEMICONDUCTOR STRAINED-LAYER STRUCTURES BY
     PLASTIC FLOW, B.W. Dodson, J.Y. Tsao, Materials Research Society
     Symposium Proceedings 103 (1988).

155. STABILITY AND METASTABILITY IN STRAINED-LAYER STRUCTURES, B.W.
     Dodson, I.J. Fritz, S.T. Picraux, J.Y. Tsao, Materials Research
     Society Symposium Proceedings 103 (1988).

156. STRAIN RELAXATION IN METASTABLE STRAINED-LAYER HETEROSTRUCTURES,
     B.W. Dodson, J.Y. Tsao, I.J. Fritz, Proceedings of SPIE (1988).

157. HYDROGEN ION BEAM SMOOTHENING OF OXYGEN ROUGHENED Ge(001) SURFACES,
     K.M. Horn, E. Chason, J.Y. Tsao, S.T. Picraux, Materials Research
     Society Symposium Proceedings 131 (1989).

158. ARGON ION BOMBARDMENT DURING MOLECULAR BEAM EPITAXY OF Ge(001), E.
     Chason, K.M. Horn, J.Y. Tsao, S.T. Picraux, Materials Research
     Society Symposium Proceedings 128 (1989).

159. REFLECTION MASS SPECTROMETRY DURING III/V HOMOEPITAXY AND
     HETEROEPITAXY, J.Y. Tsao, T.M. Brennan, B.E. Hammons, Proceedings
     of the Spring MRS Meeting, April 1990.

160. SIMULATIONS OF LOW-ENERGY ION BOMBARDMENT AND EPITAXIAL GROWTH, E.
     Chason, P. Bedrossian, J.Y. Tsao, S.T. Picraux, Proceedings of 1991
     Fall Meeting of the MRS, Boston, MA, 12/2-6/91.

161. SURFACE DISPLACEMENT THRESHOLDS FOR LOW ENERGY PARTICLES USED IN
     THE SURFACE PROCESSING OF GROUP IV SEMICONDUCTORS, S.T. Picraux, E.
     Chason, D.K. Brice, J.Y. Tsao, P. Bedrossian, T. Klitsner, K. Horn,
     Proceedings of 1991 Fall Materials Research Society Meeting,
     Boston, MA, 12/2-6/91.

162. INVESTIGATIONS OF MISFIT DISLOCATION CONFIGURATIONS IN MBE- GROWN
     InGaAs LAYERS ON MISALIGNED GaAs (001) SUBSTRATES, J.F. Klem and
     J.Y. Tsao, P. Werner, N. D. Zakharov, Y. Chen, Z.
     Liliental-Weber, J. Washburn, Proceedings of the 1992 Fall MRS
     Meeting, Boston, MA, 11/30-12/4/92.

163. Ge SURFACE DISPLACEMENTS DUE TO LOW ENERGY PARTICLES, S.T. Picraux,
     K.M. Horn, E. Chason, J.Y. Tsao, P. Bedrossian, T. Klitsner, D.K.
     Brice, Proceedings of the 1992 Fall MRS Meeting, Boston, MA,
     11/30-12/4/92.

164. REORIENTATION OF MISFIT DISLOCATIONS DURING ANNEALING IN
     InGaAs/GaAs(001) INTERFACES, Y. Chen, Z. Liliental-Weber, J.
     Washburn (Lawrence Berkeley Laboratory), J.F. Klem and J.Y. Tsao,
     Proceedings of the Spring 1993 MRS Meeting, San Francisco, CA,
     4/13-15/93.

165. STRAIN RELAXATION AND SURFACE ROUGHNESS AS A FUNCTION OF GROWTH
     TEMPERATURE IN LINEARLY GRADED InxAl1-xAs (x=0.05 to 0.25)
     BUFFERS, J. A. Olsen, S.R. Lee, I.J. Fritz, A. J. Howard, B.E.
     Hammons, J.Y. Tsao, Proceedings of the Fall 1993 MRS Conference,
     Boston, MA, 11/28-12/2/93.

166. MATERIALS ISSUES IN MOLECULAR BEAM EPITAXY, J.Y. Tsao, Proceedings
     of the 1994 Spring MRS Meeting, San Francisco, CA, 4/4-8/94.

# REPORTS, WHITE PAPERS, websites

1.  ADVANCED MANUFACTURING TECHNIQUES FOR OPTOELECTRONICS (Final report
    from CRADA 1073 between Sandia National Labs and Hewlett-Packard
    Co.), J.Y. Tsao and R.L. Moon (July, 1996). SAND96-1473.

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167. THE CASE FOR A NATIONAL RESEARCH PROGRAM ON SEMICONDUCTOR
     LIGHTING, R. Haitz, F. Kish, J.Y. Tsao and J.S. Nelson (white paper
     first presented publicly at the 1999 Optoelectronics Industry
     Development Association (OIDA) forum in Washington DC on October 6,
     1999).

168. Sandia Solid-State Lighting Website <http://lighting.sandia.gov/>,
     D.M. Meister, J.Y. Tsao and A.E. Miksovic (2002).

169. LIGHT FOR THE 21^ST^ CENTURY YEAR 2000 PROJECT REVIEW, translated
     from Japanese to English by Kirill Sereda and Jeff Tsao (April,
     2002).

170. Light Emitting Diodes (LEDs) for General Illumination, J.Y. Tsao,
     Ed., OIDA Technology Roadmap (Optoelectronics Industry Development
     Association, October, 2002).

171. Final Report on Grand Challenge LDRD Project: A Revolution in
     Lighting -- Building the Science and Technology Base for
     Ultra-Efficient Solid-State Lighting, Simmons, J. A., J. Y.
     Tsao, S. R. Kurtz, T. M. Bauer, R. J. Kaplar, W. W. Chow, E. D.
     Jones, K. E. Waldrip, S. R. Lee, A. J. Fischer, M. H.
     Crawford, K. W. Fullmer, B. L. Abrams, R. M. Biefeld, D. D.
     Koleske, A. A. Allerman, J. J. Figiel, R. J. Creighton, M. E.
     Coltrin, K. C. Cross, C. C. Mitchell, T. M. Kerley, G. T.
     Wang, K. H. A. Bogart, C. H. Seager, J. M. Campbell, D. M.
     Follstaedt, M. P. Moran, A. K. Norman, A. F. Wright, S. M.
     Myers, N. A. Missert, R. G. Copeland, J. M. Gee, P. P.
     Provencio. J. P. Wilcoxon, S. Woessner, G. R. Hadley, J. R.
     Wendt, R. J. Shul, C. I. H. Ashby, L. E. S. Rohwer, D. R.
     Tallant, R. L. Simpson, H. K. Moffat, A. G. Salinger, R. P.
     Pawlowski, J. A. Emerson, S. G. Thoma, P. J. Cole, K. W. Boyack, R.
     Elliot, M. L. Garcia, A. Salamone, M. Allen, B. A. Burdick, N. M.
     Rahal, M. A. Monson, R. M. Gonzales, E. T. Southwell, A. E.
     Miksovic, A. O. Pinson, and M. J. Pinzon (6/2004).

172. BES Solar Energy Utilization Workshop Website
     <http://www.sandia.gov/solar_energy_workshop/>, J.Y. Tsao (2005).

173. SOLAR FAQS, J.Y. Tsao, N. Lewis and G. Crabtree (report for Office
     of Basic Energy Sciences, March, 2006).

174. Kuswa, G. W., S. A. Jones, M. M. Valdez, J. D. Brewer, J. V.
     Zuffranieri, T. E. Drennen, O. Paananen, [J. Y.
     Tsao]{.underline}, J. G. Ortner, *Multi-Attribute Criteria Applied
     to Electric Generation Energy System Analysis LDRD,* LDRD SAND
     report, printed 10/05.

175. SOLAR FAQS, J.Y. Tsao, N. Lewis and G. Crabtree (report for Office
     of Basic Energy Sciences, March, 2006).

176. BES Solid-State Lighting Workshop Website
     <http://www.sandia.gov/ssl-workshop/>, J.Y. Tsao (2006).

177. Waldrip, K. E., [J. Y. Tsao]{.underline}, T. M. Kerley, *Molten
     Salt-Based Growth of Bulk GaN and InN for Substrates,* LDRD SAND
     report, printed 5/06.

178. Coltrin, M. E., [J. Y. Tsao]{.underline}, *Solid-State Lighting
     Technology Perspective,* SSL report, printed 7/06.

179. Nanotechnology for Chemical and Biological Defense 2030 Workshop
     for Defense Threat Reduction Agency (DTRA) website
     [www.sandia.gov/nanocb2030](http://www.sandia.gov/nanocb2030), W. K.
     Achyuthan, A.B. Baker, M.S. Derzon, M.E. Kosal, J. Pate, R.G.
     Sells, J.A. Simmons and J.Y. Tsao (2006).

180. SAND 2006-7621 P. J.Y. Tsao, K.W. Boyack, M. Huey and A. Miksovic,
     Technology Footprinting and Solid-State Lighting, study sponsored
     by DOE Office of Energy Efficiency and Renewable Energy
     (11/27/2006).

181. INTERNATIONAL TRENDS IN SOLID-STATE LIGHTING: ANALYSES OF THE
     ARTICLE AND PATENT LITERATURE, Kevin Boyack, Jeff Tsao, Ann
     Miksovic, Mark Huey (October 2006) (SAND 2006-6802P).

# PATENTS and patent disclosures

1.  SOLID-TRANSFORMATION THERMAL RESIST, C.O. Bozler, D.J. Ehrlich and
    J.Y. Tsao, U.S. Patent No. 4,619,894, Issued October, 1986.

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182. SURFACE ACOUSTIC WAVE DEVICES AND METHOD OF MANUFACTURE THEREOF,
     V.S. Dolat, D.J. Ehrlich and J.Y. Tsao, U.S. Patent No. 4,672,254,
     Issued June, 1987.

183. REFLECTION MASS SPECTROMETRY TECHNIQUE FOR MONITORING AND
     CONTROLLING COMPOSITION DURING MOLECULAR BEAM EPITAXY, J.Y. Tsao,
     T.M. Brennan and B.E. Hammons, U.S. Patent No. 5,171,399, Issued
     December 5, 1992.

184. PHOTODETECTOR WITH ABSORBING REGION HAVING RESONANT PERIODIC
     ABSORPTION BETWEEN REFLECTORS, R.P. Bryan, G.R. Olbright, R.M.
     Brennan, J.Y. Tsao, U.S. Patent No. 5,389,797, Issued February 14,
     1995.

185. SEMICONDUCTOR LASERS, W.B. Jiang, C.L. Shieh, X.Q. Sun, J.Y. Tsao,
     H.C. Lee, U.S. Patent No. 6,556,610, Issued April 29, 2003.

186. ELECTRICALLY-PUMPED LONG-WAVELENGTH VCSEL AND METHODS OF
     FABRICATION, C.L. Shieh, J.Y. Tsao, U.S. Patent No. 6,542,530,
     Issued April 1, 2003.

187. SEGMENTED-MIRROR VCSEL, J.Y. Tsao, C.L. Shieh, D. Dapkus, J. Yang,
     U.S. Patent No. 6,594,294, Issued July 15, 2003.

188. ELECTRICALLY PUMPED LONG-WAVELENGTH VCSEL WITH AIR GAP DBR AND
     METHODS OF FABRICATION, C.L. Shieh, J.Y. Tsao, U.S. Patent No.
     6,696,308, Issued February 24, 2004.

# INVITED PRESENTATIONS

1.  THE KINETICS OF LASER-SURFACE MICROCHEMISTRY, J.Y. Tsao and D.J.
    Ehrlich, 185th American Chemical Society National Meeting, Seattle,
    WA (20-25 March 1983).

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189. LASER-INDUCED SURFACE MICROCHEMISTRY AND APPLICATIONS, J.Y. Tsao,
     Colloquium at Corning Research Labs, Corning, NY (19 May 1983).

190. LASER DIRECT-WRITE PROCESSING, J.Y. Tsao and D.J. Ehrlich, IEEE
     Custom Integrated Circuits Conference, Rochester, NY (23-25 May
     1983).

191. LASER DIRECT WRITING BY SURFACE MICROCHEMISTRY, J.Y. Tsao,
     Colloquium at IBM-San Jose Research Labs, San Jose, CA (11 October
     1983).

192. NUCLEATION AND GROWTH FAR FROM EQUILIBRIUM IN THE c-Si/a-Si/l-Si
     SYSTEM, J.Y. Tsao, Colloquium at Harvard University, Cambridge, MA
     (23 October 1986).

193. NUCLEATION INSTABILITIES IN THE c-Si/a-Si/l-Si SYSTEM, J.Y. Tsao,
     Colloquium at Stanford University, Stanford, CA (4 March 1987).

194. NUCLEATION INSTABILITIES AT MOVING LIQUID/SOLID INTERFACES, J.Y.
     Tsao and P.S. Peercy, March 1987 Meeting of the American Physical
     Society, New York, NY (16-20 March 1987).

195. NUCLEATION AND GROWTH FAR FROM EQUILIBRIUM IN THE c-Si/a-Si/l-Si
     SYSTEM, J.Y. Tsao, Colloquium at Cornell University, Ithaca, NY (19
     March 1987).

196. DEFORMATION MECHANISM MAPS AND THE STRUCTURAL METASTABILITY OF
     EPITAXIAL STRAINED LAYERS, J.Y. Tsao and B.W. Dodson, Colloquium at
     Harvard University, Cambridge, MA (15 October 1987).

197. STABILITY AND METASTABILITY OF EPITAXIAL STRAINED LAYERS, J.Y. Tsao
     and B.W. Dodson, Colloquium at the University of New Mexico,
     Albuquerque, NM (3 November 1987).

198. DYNAMICS OF MELTING AND FREEZING IN c-Si/a-Si/l-Si, J.Y. Tsao, 1988
     Physical Metallurgy Gordon Conference, Kimball-Union Academy,
     Meriden, NH (18-22 July 1988).

199. GROWTH AND RELAXATION OF STRAINED HETEROSTRUCTURES, colloquium at
     MIT-Lincoln Laboratory, Lexington, MA (22 July 1988).

200. IN SITU STUDIES OF SURFACE CHEMISTRY AND SURFACE PHYSICS DURING
     MOLECULAR BEAM EPITAXY, Electronic Materials and Devices Seminar at
     Princeton University, Princeton, NJ (6 March 1989).

201. LOW-ENERGY ION BEAMS, MOLECULAR BEAM EPITAXY, AND SURFACE
     MORPHOLOGY, J.Y. Tsao, E. Chason, K.M. Horn and S.T. Picraux, New
     York Chapter American Vacuum Society Symposium on Ion Beam
     Modification of Materials, AT&T Bell Laboratories, Murray Hill, NY
     (8 March 1989).

202. IN SITU STUDIES OF SURFACE CHEMISTRY AND SURFACE PHYSICS DURING
     MOLECULAR BEAM EPITAXY, Materials and Devices Seminar at the
     University of Minnesota (5 April 1989).

203. IN SITU STUDIES OF SURFACE CHEMISTRY AND SURFACE PHYSICS DURING
     MOLECULAR BEAM EPITAXY, Materials Science Seminar at the University
     of Wisconsin, Madison, WI (6 April 1989).

204. SiGe STRAINED HETEROSTRUCTURES: WHAT'S STABLE, WHAT ISN'T, AND BY
     HOW MUCH?, J.Y. Tsao, 4^th^ International Conference on Modulated
     Semiconductor Structures, University of Michigan, Ann Arbor, MI
     (17-21 July 1989).

205. REFLECTION MASS SPECTROMETRY DURING III/V MBE, J.Y. Tsao, T.M.
     Brennan and B.E. Hammons, 1989 Spring MRS Meeting, San Francisco,
     CA (16-20 April 1989).

206. REFLECTION MASS SPECTROMETRY, III/V MBE, AND ADSORBATE-INDUCED
     PHASE TRANSITIONS, J.Y. Tsao, T.M. Brennan and B.E. Hammons, 38th
     Annual AVS Symposium & Topical Conference, Seattle, WA (11-15
     November 1991).

207. PHASE DIAGRAMS IN HETEROEPITAXY: FROM ORDERED ADSORBATES TO
     PSEUDOMORPHIC FILMS TO BULK CRYSTALS, J.Y. Tsao, 1992 Spring MRS
     Meeting, San Francisco, CA (27 April - 1 May 1992).

208. MISFIT ACCOMMODATION IN STRAINED THIN FILMS, J.Y. Tsao, 1992 Fall
     MRS Meeting, Boston, MA, (20 November - 4 December 1992).

209. MATERIALS ISSUES IN MOLECULAR BEAM EPITAXY, J.Y. Tsao, 1994 Spring
     MRS Meeting, San Francisco, CA (4-8 April 1994).

210. COMPOUND SEMICONDUCTOR MATERIALS AT SANDIA NATIONAL LABORATORIES,
     J.Y. Tsao, Colloquium at UC San Diego, San Diego, CA (November,
     1995).

211. A REVIEW OF REFLECTION MASS SPECTROMETRY DURING III/V MBE, J.Y.
     Tsao, Virtual MBE Workshop, Hughes Research Labs, Malibu, CA
     (January, 1996).

212. CAREERS AT SANDIA, J.Y. Tsao, Asian Leadership Outreach Committee
     workshop, Albuquerque, NM (July, 1997).

213. SCIENCE-BASED COMPOUND SEMICONDUCTOR MANUFACTURING, J.Y. Tsao,
     Colloquium at University of Texas, Austin, TX (September 1996).

214. CAREERS IN SCIENCE AND TECHNOLOGY AT NATIONAL LABORATORIES, J.Y.
     Tsao, 1996 American Vacuum Society Meeting, Philadelphia, PA (14-18
     October 1996).

215. SCIENCE-BASED COMPOUND SEMICONDUCTOR MANUFACTURING, J.Y. Tsao,
     Colloquium at University of Texas, El Paso, TX (November, 1996).

216. FRONTIERS IN SEMICONDUCTORS, J.Y. Tsao, New Year\'s Renaissance
     Weekend, Hilton Head, SC (January, 1997).

217. INFORMATION TOOLS IN SCIENCE, J.Y. Tsao, New Year\'s Renaissance
     Weekend, Hilton Head, SC (January, 1997).

218. III-V EPITAXY: SCIENCE, TECHNOLOGY, APPLICATION, J.Y. Tsao, 1997
     Fall MRS Meeting, Boston, MA (December, 1997).

219. SEMICONDUCTOR EPITAXY: SCIENCE, TECHNOLOGY AND APPLICATIONS, J.Y.
     Tsao, a series of 12 lectures given at the Institute of Materials
     Research and Engineering, the National University of Singapore
     (August - November, 1998).

220. FRONTIERS IN COMPOUND SEMICONDUCTOR EPITAXY, J.Y. Tsao, Colloquium
     at Harvard University, Cambridge, MA (February, 2000).

221. FRONTIERS IN COMPOUND SEMICONDUCTOR OPTOELECTRONICS: LIGHTING FOR
     ILLUMINATION AND COMMUNICATION, J.Y. Tsao, Colloquium at the Ioffe
     Institute, St. Petersburg, Russia (January, 2001).

222. FRONTIERS IN COMPOUND SEMICONDUCTOR OPTOELECTRONICS: LIGHTING FOR
     ILLUMINATION AND COMMUNICATION, J.Y. Tsao, Colloquia at Industrial
     Technology and Research Institute, Epistar, and Visual Photonics
     Epitaxy Corporation, Hsinchu, Taiwan (March, 2001).

223. THE SECOND REVOLUTION IN FIBER-OPTIC COMMUNICATIONS, J.Y. Tsao,
     Spring Renaissance Weekend, Charleston, SC (March, 2001).

224. The U. S. Solid-State Lighting Roadmap: Targets and Technical
     Challenges, J.Y. Tsao, Seminar at University of Michigan, Ann
     Arbor, MI (11 October, 2002).

225. The U. S. Solid-State Lighting Roadmap: Targets and Technical
     Challenges, J.Y. Tsao, 2002 OIDA Annual Forum, Washington, DC (20
     November, 2002).

226. Science and Technology Challenges in Solid-State Lighting, J.Y.
     Tsao, Workshop on Selective, Patterned and Self-Assembled Growth in
     Nanostructures, Hong Kong, China (6-8 January, 2003).

227. The U. S. Solid-State Lighting Roadmap: Targets and Technical
     Challenges, J.Y. Tsao, 2003 International Conference on Compound
     Semiconductor Manufacturing Technology, Scottsdale, AZ (19-22 May,
     2003).

228. Solid State Lighting: the Promise and the Challenges, J.Y. Tsao,
     Harvard University, Cambridge, MA (28 May, 2003).

229. Solid State Lighting: the Promise and the Challenges, J.Y. Tsao,
     Yale University, New Haven, CT (29 May, 2003).

230. The U. S. Solid-State Lighting Roadmap: Targets and Technical
     Challenges, J.Y. Tsao, J.M. Gee and J.A. Simmons, SPIE
     International Symposium on Solid State Lighting, San Diego, CA (7
     August, 2003).

231. Solid-State Lighting: The Promise and the Materials Challenges,
     J.Y. Tsao, 2004 American Vacuum Society Annual Meeting, Baltimore,
     MD (24-28 November, 2003).

232. Tsao, J. Y., Solid-State Lighting: Lamps, Chips and Materials for
     Tomorrow, 3M Solid-State Lighting Workshop, 11/10/04, Minneapolis,
     MN (invited).

233. Tsao, J. Y., K. W. Boyack, M. E. Coltrin, J. G. Turnley, W. B.
     Gauster, Interactive Knowledge Production in Science, Technology
     and Engineering, 3M Colloquium, 11/11/04, Minneapolis, MN
     (invited).

234. Tsao, J. Y, Solid-State Lighting: Lamps, Chips and Materials for
     Tomorrow, 2005 Conference on Lasers and Electro-Optics, 5/22-27/05,
     Baltimore, MD (invited).

235. Tsao, J. Y., Solid-State Lighting: Lamps, Chips and Materials for
     Tomorrow, 2005 International Forum on Solid-State Lighting,
     4/12-15/05, Xiamen, P. R. China (invited).

236. Tsao, J. Y., K. W. Boyack, M. E. Coltrin, J. G. Turnley, W. B.
     Gauster, Galileo's Stream: A New Framework for Technical Knowledge
     Production, Seminar at Basic Energy Sciences, 3/15/05, Germantown,
     MD.

237. Tsao, J. Y., Solid-State Lighting: Lamps, Chips and Materials for
     Tomorrow, Association of Chinese American Engineers and Scientists,
     4/16/05, Albuquerque, NM (invited).

238. Tsao, J. Y., The Inorganic Solid State Lighting Roadmap: "Take One"
     and "Take Two", 2005 NAE Regional Meeting: Solid State Lighting,
     the Next Revolution in Lighting, 5/19/05, Albuquerque, NM
     (invited).

239. **[Tsao, J. Y]{.underline}**, *The Next Semiconductor Revolution:
     This Time It's Lighting!,* Seal Beach Leisure World, 7/3/05, Seal
     Beach, CA (**invited**).

240. Solid-State Lighting: The Potential and the Challenges, J.Y. Tsao,
     Institute of Materials Research and Engineering (IMRE), Singapore
     (2 August, 2005).

241. Tsao, J. Y., K. W. Boyack, M. E. Coltrin, J. G. Turnley, W. B.
     Gauster, Galileo's Stream: A "Systems" View of Technical Knowledge
     Production, Seminar at Centre for Management of Science and
     Technology (CMOST) - National University of Singapore, 8/5/05,
     Singapore (invited).

242. **[Tsao, J. Y]{.underline}**, *The Next Semiconductor Revolution:
     This Time It's Lighting!*, Albuquerque OASIS, 10/26/05,
     Albuquerque, NM (**invited**).

243. **[Tsao, J. Y]{.underline}**, *The Inorganic Solid State Lighting
     Roadmap: "Take One" and "Take Two"*, IES Monthly Lunch
     Meeting---Lighting Research and Programs at Sandia National
     Laboratories, 1/10/06, Albuquerque, NM (**invited**).

244. **M. Huey**, [Tsao, J. Y]{.underline}., K. W. Boyack, *SSL R&D in
     Key Countries: Investments, Patents, and Publications,* Next
     Generation Lighting Initiative Alliance and the DOE Office of
     Energy Efficiency and Renewable Energy, 1/17/06, Washington, DC
     (**invited**).

245. **[Tsao, J. Y]{.underline}.,** *Solar FAQs and Global Renewable
     Energy,* Briefing for Department of Energy, 4/25/06, Gaithersburg,
     MD (**invited**).

246. **Fischer, A. J**., [J. Y. Tsao]{.underline}, W. W. Chow, M. H.
     Crawford, M. Weckwerth, *Potential Implications of High-Power
     Lasers on Solid-State Lighting,* Photonics Applications Systems
     Technologies (*PhAST)* 2006, 5/22-25/06, Long Beach, CA
     (**invited**).

247. Solid-State Lighting: A Case Study in Science and Technology
     Evolution, J.Y. Tsao, China International Forum on Solid-State
     Lighting (CIFSSL), Shenzhen, China (12-14 July, 2006).

248. SAND 2007-4125 P. J.Y. Tsao, The Next Semiconductor Revolution:
     This Time It's Lighting!, International Energy Agency, Paris,
     France, 6/7/2007, Paris, France.