[^1]

*Abstract*\-- We present results of continuing efforts to evaluate total
dose bias dependency and ELDRS effects in bipolar linear microcircuits.
Several devices were evaluated, each exhibiting moderate to significant
bias and/or dose rate dependency.

# [S]{.smallcaps}INTRODUCTION

TANDARD linear bipolar microcircuits continue to be used in a variety of
space applications with total dose radiation requirements. Many of these
devices have a significant amount of flight history, others are just
beginning to be used or are proposed for use. In either case, these
devices have often not been completely characterized for dose rate and
bias effects in the total dose environment. It has been known for some
time that bipolar linear devices often perform worse at dose rates lower
than those that have been typically used in laboratory tests
\[1\]-\[3\]. This effect has been termed Enhanced Low Dose Rate
Sensitivity (ELDRS) with the physical mechanisms for this effect being
proposed in \[4\]-\[6\], as well as others. It has further been shown
that these devices can be sensitive to the bias condition during
irradiation \[7\]-\[8\]. Understanding device sensitivity to bias and
dose rate under irradiation is critical for bounding device performance
for space applications as the actual dose rate is typically very low and
devices may be in a variety of bias conditions for the mission duration.

Reported herein are the results from tests, which were performed as a
continuing effort to evaluate bipolar linear devices for both bias and
dose rate effects. The objective in most cases is to determine whether
the typical biased or unbiased condition represents the worst-case
condition during irradiation and to determine if the device is
susceptible to ELDRS. It should be noted, however, that these tests were
not intended to provide an upper bound, or worst case, for device
parameter performance. It has been shown \[9\] that some devices perform
worse at dose rates lower than those used in these tests. Further, it is
not possible, to test all possible bias conditions to ensure a worst
case.

# Device Descriptions

Results from total dose characterization tests of six different device
types from different manufacturers are included herein. Part numbers and
lot identification for the devices tested are provided in Table I. All
devices were obtained directly from the manufacturer and procured as
lots intended for flight use. All of the devices were fabricated on the
manufacturer's standard bipolar process.

# Experimental Details

## Total Dose Facilities

Total dose irradiations for the LT1006, LT1963, and LM3940 were
performed at the high and low dose rate (HDR and LDR) Co-60 range
sources at the Jet Propulsion Laboratory, Pasadena, CA. These facilities
each have a Shepherd Co-60 irradiator that irradiates into an open
vault. Total dose irradiations for the LM158's, National and Motorola,
were performed at the Raytheon Component Evaluation Center, El Segundo
CA, under the direction of Boeing Satellite Systems. At this facility,
low and high dose rate irradiations were preformed using a Shepherd
model 142 Co-60 and a Gammacell 220 Co-60 irradiator respectively. The
Shepherd 142 had a 'pencil' cobalt source in the center of a cylindrical
chamber. In this configuration dose rate is adjusted by changing
distance from the source. Total dose irradiations for the LM136 were
performed at the Boeing Radiation Effects Laboratory, Seattle WA. Low
and high dose rate irradiations at this facility were performed using a
Shepherd 484 Co-60 irradiator and the Gamma Vault facility respectively.
Dose rates for the high dose rate exposures ranged between 25 to 150
rad/s. Low dose rate exposures were carried out at between 0.01 to 0.02
rad/s. All sources were in compliance with MIL-STD-883, Method 1019, and
have undergone dosimetry correlation \[10\].

## Electrical Tests

All electrical tests for parts tested at Raytheon in El Segundo, CA,
were performed using an LTX mixed signal automated test system.
Electrical tests for parts tested at JPL and BREL were performed using
an LTS2020 mixed signal automated test system. Irradiations and
electrical tests for each device type were performed at the same
location. Electrical tests included, as a minimum, all of the DC test
parameters in the manufacturer's specification. In exception to this,
the LM3940 was monitored for Vout on the bias card only.

## Procedure

Samples of each device type were divided into four groups of five parts
each for biased and unbiased low rate as well as biased and unbiased
high rate irradiations. Exception to this was the LM158 from National,
where there was no biased testing done. After pre-irradiation electrical
tests, the four groups underwent step level irradiation and test. The
time between irradiation steps for electrical tests was between one to
two hours. The outputs of the biased samples were periodically monitored
on the bias circuit to ensure that the devices were stable while under
irradiation. The time frame for group tests for each device type was
maintained as short as possible; i.e. months did not pass between high
and low dose rate tests. This was done to minimize any error due to
equipment calibration changes. The irradiation bias conditions for
biased irradiations are defined in Table II. Parts in the unbiased
groups had all leads shorted.

TABLE II.

Irradiation Bias Conditions

  -------------------- --------------------------------------------------
  Device               Bias conditions

  LT1006               Vcc = 30V, Vee=0, Vcm =10V, voltage follower

  LM136                Ir = 1mA, Vz = 2.5V

  LM158                V+ = +15V, V-= -15V, Vcm = 0, Voltage follower

  LT1963               Vin = 6V, Vout = 5V, Iout = 100mA, Vsd = 6V

  LM3940               Vin = 5V, Iout = 100mA
  -------------------- --------------------------------------------------

# Test Results

## LT1006A

The LT1006 exhibited a significant ELDRS effect and some bias
dependency. Most effected parameter was the input bias current, Ib,
which drifted 8 to 10 times more for the low dose rate cases (Fig. 1).
Although no bias dependency is seen for Ib in the low rate case, the
device appeared to fail functionally for the biased high dose rate
condition at 10 to 15 Krad. Input offset voltage (Fig. 2) exhibited both
dose rate and bias dependency with the biased low rate condition
demonstrating the worst-case degradation. Again, though the low dose
rate cases exhibited the worst parametric degradation, the device was
observed to fail functionally after 10 Krad. This functional failure is
likely due to rapid build up of oxide trapped charge leading to
significant internal leakage in the device. Though not shown this was
evident in a large increase in supply current after 15 Krad. As evident
from the low dose rate test groups this failure mode is not likely to
occur at the low dose rate of space applications.

## LM136 

## Reference voltage for the LM136 device exhibited both a significant and bias effect although the device specification, ±50mV was not exceeded to the levels tested (Fig. 3). The low dose rate case was worse for both bias conditions with about a 5 times parametric enhancement factor at 30 Krad. The unbiased case was significantly worse than the biased case for both high and low dose rate.  {#reference-voltage-for-the-lm136-device-exhibited-both-a-significant-and-bias-effect-although-the-device-specification-50mv-was-not-exceeded-to-the-levels-tested-fig.-3.-the-low-dose-rate-case-was-worse-for-both-bias-conditions-with-about-a-5-times-parametric-enhancement-factor-at-30-krad.-the-unbiased-case-was-significantly-worse-than-the-biased-case-for-both-high-and-low-dose-rate. .unnumbered}

## LM158

Samples of the LM158 dual op-amp were obtained from both National
Semiconductor and Motorola Semiconductor to evaluate both devices for
dose rate and bias dependency and to compare the performance of the two.
For both manufacturers' devices, input bias current was the most
sensitive parameter. For the Motorola device only a minor ELDRS effect
is evident (Fig. 4) to the levels tested and a minor bias dependency is
found for the low rate case only. In contrast, a fairly moderate ELDRS
effect is evident for the National Semiconductor device (Fig. 5). For
the National device input bias current exhibits an enhancement factor of
about 3. The biased case was not tested for this device due to a limited
availability of test samples.

## LT1963

## The most sensitive parameter for the LT1963 voltage regulator was found to be the dropout voltage that exceeded specification under 5 Krad. This parameter indicated only a minor ELDRS effect up to 15 Krad (Fig. 6). However, above 15 Krad devices in the low dose rate unbiased group failed to drive the required 1A load. This functional failure is likely due to loss of gain in the lateral PNP pass transistor; an ELDRS and bias sensitive failure mode found in previous tests \[11\]. {#the-most-sensitive-parameter-for-the-lt1963-voltage-regulator-was-found-to-be-the-dropout-voltage-that-exceeded-specification-under-5-krad.-this-parameter-indicated-only-a-minor-eldrs-effect-up-to-15-krad-fig.-6.-however-above-15-krad-devices-in-the-low-dose-rate-unbiased-group-failed-to-drive-the-required-1a-load.-this-functional-failure-is-likely-due-to-loss-of-gain-in-the-lateral-pnp-pass-transistor-an-eldrs-and-bias-sensitive-failure-mode-found-in-previous-tests-11. .unnumbered}

## LM3940

## The National LM3940 was found to be both bias and dose rate sensitive (Fig. 7) with the biased low dose rate case exhibiting the most significant degradation. Here the device output voltage at 1A is found to fall rapidly with failure to the specification occurring at about 5 Krad for the biased low dose rate case. In contrast, when tested at high dose rate the device continues to be within specification to 15 Krad while biased. It is not known in this case if the failure mechanism is in the reference circuit or the pass transistor since Vout was only observed for one load condition {#the-national-lm3940-was-found-to-be-both-bias-and-dose-rate-sensitive-fig.-7-with-the-biased-low-dose-rate-case-exhibiting-the-most-significant-degradation.-here-the-device-output-voltage-at-1a-is-found-to-fall-rapidly-with-failure-to-the-specification-occurring-at-about-5-krad-for-the-biased-low-dose-rate-case.-in-contrast-when-tested-at-high-dose-rate-the-device-continues-to-be-within-specification-to-15-krad-while-biased.-it-is-not-known-in-this-case-if-the-failure-mechanism-is-in-the-reference-circuit-or-the-pass-transistor-since-vout-was-only-observed-for-one-load-condition .unnumbered}

# Discussion

To varying degrees, all of the devices tested exhibited enhanced low
dose rate sensitivity with the low dose rate test condition generally
resulting in more parametric degradation than the high dose rate case.
Whether the biased or unbiased condition represented the worst case with
respect to radiation was dependent on the device type and the specific
parameter. .

# Conclusions

It is clear from these and previous test results that complete
characterization of bipolar linear microcircuits should include testing
in both the biased and unbiased conditions as well as at multiple dose
rates to determine ELDRS susceptibility.

# References

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3.  E.W. Enlow et al, "Response of advanced bipolar process to ionizing
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4.  R.J. Graves et al, "Modeling low-dose-rate effects in irradiated
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5.  D.M. Fleetwood, "Physical mechanisms contributing to enhanced
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7.  S. McClure et al, "Total dose performance of radiation hardened
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8.  C. Yui et al, "Total dose bias dependency and ELDRS effects in
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10. M. Simons, et al., "Common-source TLD and RADFET characteristics of
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![](media/image1.wmf){width="3.5in" height="2.3854166666666665in"}

![](media/image2.wmf){width="3.5in"
height="2.3881944444444443in"}Fig. 1. Input bias current for the LT1006
exhibited ELDRS with no bias effect for the low dose rate case.

![](media/image3.wmf){width="3.5in" height="2.3881944444444443in"}

Fig. 2. Input offset voltage for the LT1006 exhibited both ELDRS and
bias effects.

![](media/image4.wmf){width="3.5in" height="2.3881944444444443in"}

Fig. 3. LM136 reference voltage exhibited more change for the low dose
rate and the unbiased cases.

Fig. 4. The Motorola LM158 exhibits only a minor ELDRS effect. A minor
bias dependency is seen for the low dose rate case.

![](media/image5.wmf){width="3.5in" height="2.3881944444444443in"}

Fig. 5. The National LM158 exhibits a moderate ELDRS effect with input
bias current degrading about a factor of three worse at low dose rate.

![](media/image6.wmf){width="3.5in" height="2.3881944444444443in"}

Fig. 6. Dropout voltage for the LT1963 seems to have only a minor ELDRS
effect below 15 Krad. However the low dose rate unbiased case fails to
drive the require load current above 15 Krad.

![](media/image7.wmf){width="3.5in" height="2.3881944444444443in"}

Fig. 7. Output voltage for the LM3940 exhibited pronounce ELDRS and bias
sensitivity with the biased low rate case having the most significant
degradation.

[^1]: ^^Manuscript received February 7, 2003. The research reported in
    this paper was carried out by Boeing Satellite Systems Company and
    by the Jet Propulsion Laboratory, California Institute of
    Technology, under contract with the National Aeronautics and Space
    Administration (NASA), under the NASA Electronic Parts and Packaging
    Program, Code AE

    S. S. McClure, was with The Jet Propulsion Laboratory, Pasadena, CA
    91109 USA. He is now with Northrup Grumman Space Technology, Redondo
    Beach, CA 90278 USA (telephone: 310-812-7147, e-mail:
    steve.mcclure@ngc.com).

    J. L. Gorelick is with Boeing Satellite Systems, El Segundo, CA
    90245 USA (telephone: 310-364-8585, e-mail:
    jerry.l.gorelick@boeing.com).

    C. L. Yui is with the Jet Propulsion Laboratory, Pasadena, CA 91109
    USA (telephone: 818-393-0945, e-mail: Candice.c.yui@jpl.nasa.gov).

    B. G. Rax is with the Jet Propulsion Laboratory, Pasadena, CA 91109
    USA (telephone: 818-354-9799, e-mail: Bernard.g.rax@jpl.nasa.gov).

    M. D. Wiedeman is with the Jet Propulsion Laboratory, Pasadena, CA
    91109 USA (telephone: 818-354-1830, e-mail:
    Michael.wiedeman@jpl.nasa.gov).