# Specifications and Requirements for PECVD

### A. Specifications:

1..System shall be a compact, stand alone, integrated table top design
no larger than 25inches cubed.

2\. RF power supply shall be at a minimum a 350 watt, 30KHz, solid state
RF generator integrated within system cabinetry with digital power
display and safety interlocks to disable power supply when system is
vented or system panel is removed.

3\. Vacuum chamber shall be made out of stainless steel and be a minimum
12 inch diameter accommodate a 9 inch diameter driven electrode isolated
from electrical ground.

4\. The deposition platen shall be made out of stainless steel and be a
minimum 9 inch diameter with an aluminum liner for thermal uniformity
and physically isolated from process plasma during operation.

5\. Process gas dispersion ring shall be located on outer edge of
deposition platen for radial flow gas dynamics and maximum film
deposition uniformity.

6\. System shall have capability of 4 automatic mass flow controllers
for Silane, Ammonia, Nitrous Oxide, and Oxygen process gases with
magnetically actuated proportioning valves and flow rate digitally
displayed in standard cubic centimeters per minute. All connections are
to be stainless steel with VCR fittings and each line having a submicron
filter and check valve.

7\. Deposition platen shall have a heater incorporated with a digital
temperature display and temperature control set point range from ambient
to a maximum of 350 degrees Celsius.

8\. A corrosion resistant capacitance manometer for vacuum pressure
sensing with digital system pressure display from 1 to 1999 milli-Torr
range.

9\. A minimum 16 CFM corrosive series, two stage, direct drive rotary
vane vacuum pump charged with Fomblin oil to attach to system vacuum
chamber with stainless steel convoluted bellows vacuum line and KF25
flange connectors.

10\. System shall be controlled by an industrial grade computer equipped
with a minimum Pentium CPU, 64MB RAM, 6.0 GB hard drive and SVGA
monitor. Operating software shall be Microsoft Windows NT Release 4.0
with process control Graphical User Interface software to control and
display process variables in recipe format. All system controls and
functions shall be controlled and displayed by computer with

unlimited recipe storage and data logging.

11\. System shall have manual over ride capability for system operation
and emergency shut off switch.

### B. Requirements:

1\. A minimum of one (1) day system commissioning and training shall be
provided by the Contractor.

2\. System shall be capable of depositing silicon nitride and silicon
dioxide films to a minimum of one micron thickness in a single run with
a thickness uniformity of plus or minus 3 percent over a 3 inch wafer.

3\. Silicon Dioxide shall have a refractive index of 1.46 (plus or minus
1 percent). Referenced to Helium-Neon line.

4\. Silicon Nitride shall have a refractive index of 1.95 (plus or minus
2 percent). Referenced to Helium-Neon line.

5\. Thickness uniformity and refractive index shall be analyzed by
purchaser with Spectral Ellipsometry traced to NIST standards to verify
above requirements.

6\. Have capability for future upgrades/modifications such as, but not
limited to, RF power supply, additional automatic gas mass flow
controllers, software, computer, etc.

7\. Have capability for interfacing with any PC or Laptop computer.