Albert V. Davydov, Ph.D.

Office Address: Home Address:

National Inst. of Standards and Tech. (NIST) 10901 Stonecutter Place

100 Bureau Dr., Stop 8555 North Potomac, MD 20878

Gaithersburg, MD 20899 Phone: (301) 424-2452 Fax: (253) 399-0672

Phone: (301) 975-4916 E-mail: albert_davydov@hotmail.com

Fax: (301) 975-4553 Web-site: www.ctcms.nist.gov/\~davydov

[PROFESSIONAL]{.smallcaps} A position leading towards successful
research and development in [OBJECTIVE:]{.smallcaps} electronic
materials for device applications

[QUALIFICATIONS SUMMARY:]{.smallcaps} 20 years experience in synthesis,
processing and characterization of electronic materials. Comprehensive
knowledge and expertise in a) nanowire growth, thin film deposition and
bulk crystal growth techniques; b) metallization to wide-band-gap
semiconductors; c) structural characterization of nanowires, films and
bulk crystals; d) experimental and computational study of phase
equilibria. Extensive leadership and communication experience.

INSTRUMENTATIONAL SKILLS: Growth systems: MOCVD, HVPE, Bridgman, e-beam
deposition; XRD; SEM; AFM; DTA; photolith.; Electrical characterization:
4-point probe, Hall

PROFESSIONAL EXPERIENCE:

**[National Institute of Standards and Technology]{.underline}**

**Materials Research Engineer** (2005 -- present)

**Guest Scientist** (1997-2004)

**+ Research Associate at the University of Maryland**

**Dept. Mat. Sci. & Eng., Bldg. 090, College Park, MD 20742**
(2000-2005)

[Initiated projects on wide-band-gap compound semiconductors and other
electronic materials:]{.underline}

-   Conducted growth, metallization and characterization of ZnO, GaN and
    Si nanowires

-   Developed combinatorial approach for optimization of electrical
    contacts to GaN thin films

-   Evaluated thermal stability of gallium nitride thin films in various
    ambients and assessed Pressure-Temperature-Composition Phase Diagram
    of the Ga-N system

-   Assessed crystalline quality, composition and strain in MOCVD & HVPE
    Al~x~Ga~1-x~N thin films

-   Conducted structural characterization of Fe~1-x~Co~x~Si~2~,
    Hf~1-x~Ti~x~O~2~ and Hf~1-x~Si~x~O~2~ thin films

-   Monitored 3 SBIR contracts on thin film semiconductor growth and
    processing

[Participated in the development of the thermodynamic database for
commercial superalloys:]{.underline}

1.  Assessed phase diagrams and thermochemistry of the Co-Mo and Co-Ti
    systems

**[Chem. Eng. Dept., P.O. Box 116005, University of Florida,
Gainesville, FL 32611]{.underline}**

**Assistant Scientist** (1997-2000)

**Postdoctoral Research Associate** (1993-1997)

[Conducted research on visible light emitting materials and injection
devices:]{.underline}

-   Operated and troubleshooted MOCVD system for making thin film
    semiconductors.

-   Conducted experiments on: a) MOCVD growth and characterization of
    Zn(Mg)S and ZnCdS heterostructures, and quantum confined Si/ZnS
    nanostructures for optoelectronic applications, b) initial
    deposition studies of Si, ZnS and SrS.

-   Conducted project on assessment of thermochemical and phase diagram
    data in the III-V, II-VI, and I-III-VI systems, aimed at
    optimization of the growth conditions for selected compound
    semiconductors, such as GaAs, GaN, ZnS and CuInSe~2~.

-   Trained and coordinated graduate students in MOCVD growth and phase
    diagram assessment.

-   Assisted in teaching chemical thermodynamics course for
    undergraduate students: lecturing and supervising the ASPEN computer
    project on VLE equilibria.

    **[Engineering Materials Dept., Mappin St., Univ. of Sheffield,
    Sheffield, S1 3JD (UK)]{.underline}**

    **Invited Researcher** (on leave from Moscow State University)
    (1992-1993)

    [Accomplished Royal Society fellowship program on thermodynamic
    evaluation of materials for electronic application:]{.underline}

-   Optimized thermodynamic description of the Zn-Te system and
    evaluated limiting growth conditions for the ZnTe compound
    semiconductor.

-   Contributed to calorimetric studies of selected high-T~c~
    superconductor phases.

    **[Chemistry Dept., University of Wisconsin, 1101 Univ. Ave.,
    Madison, WI 53706]{.underline}**

    **Visiting Assistant Professor** (on leave from Moscow State
    University) (1992)

    [Developed process for varying electronic properties of II/VI based
    chemical sensors by thermal treatment of CdS, CdSe crystals in a
    controlled gas atmosphere.]{.underline}

## Chemistry Dept., Moscow State University, Vorobyovy Gory, Moscow, 119899 (RUSSIA) 

**Assistant Professor** (1991-1993)

**Researcher** (1987-1991)

[Conducted research on synthesis and characterization of narrow band gap
semiconductors for optoelectronic applications:]{.underline}

-   Synthesized and characterized bulk single crystals of III-VI and
    IV-VI materials by liquid-solid and vapor-solid techniques for use
    in active elements of IR-detectors.

-   Investigated phase equilibria in the metal-chalcogenide systems:
    In-Tl-X (X= Se, Te) and Tl-Bi-Te, in search for new alloy
    semiconductors with variable band gap.

-   Evaluated thermochemistry and phase diagram data in the
    metal-chalcogenide systems, directed at optimization of crystal
    growth conditions for compound semiconductors.

[Teaching:]{.underline} taught general and inorganic chemistry courses
for undergraduate students

EDUCATION:

Ph.D. Inorganic Chemistry, Moscow State University, Russia (1989)

M.S. Chemistry, Moscow State University, Russia (1984)

HONORS/AWARDS:

"One of the 25 Most Innovative Products (GaN Nanowire Nanolights)"

Award by R&D Magazine and Micro/Nano Newsletter (to NIST team) (2006)

Award of International Centre for Diffraction Data (ICDD) (2003)

Best Paper Award on 'Phase Diagram Assessment' from APDIC (2001)

Royal Society Fellowship Award, UK (1992-1993)

University of Wisconsin Visiting Scholarship, USA (1992)

PROFESSIONAL *Head* of the Semiconductor Task Group for the
International Centre for AFFILIATIONS: Diffraction Data (ICDD)

> *Member:* Amer. Assoc. for Crystal Growth; Who's Who in Sci.& Eng.
>
> *Reviewer:* NSF, CRDF and peer-reviewed journals

*Associate Editor:* Journal of Mining and Metallurgy

OTHER SKILLS: Fluent in English and Russian languages; knowledge of the
statistical and

specialized scientific (ThermoCalc, MTDATA) software packages

REFERENCES: Upon request PUBLICATIONS: see Appendix attached

[RECORD of GRANTS and COTRACTS]{.underline}, which Dr. A. Davydov has
been actively involved in for the past 14 years:

1.  Growth and metallization of semiconductor nanowires for electronics
    and optoelectronics

    Sponsor: NIST, 2004 - present

2.  Combinatorial development of electrical contacts to n- and p-GaN
    semiconductor

    Sponsor: NIST/University of Maryland, 2003-2004

3.  Metallurgy of the electrical contacts to wide-band-gap
    semiconductors

    Sponsor: NIST/University of Maryland, 2000-2003

4.  Evaluation of phase diagrams for selected electronic materials and
    metal alloys

    Sponsor: NIST/University of Florida, 1999/00

5.  Thermodynamic evaluation and calculation of phase diagrams for Co-Mo
    and selected Ni-based alloys. Sponsor: NIST/University of Florida,
    1997/99

6.  Bulk crystal growth and epitaxy of compound semiconductors for
    visible light emitters. Sponsor: NRC/COBASE, 1995/96

7.  Assessment of the thermochemistry and phase diagrams for selected
    wide band gap compound semiconductors. Sponsor: Stand. Reference
    Data Program, NIST, 1994/95

SELECTED PUBLICATIONS:

1.  S.L. Rumyantsev, M.S. Shur, M.E. Levinshtein, A. Motayed, and A.V.
    Davydov, **Low-frequency noise in GaN nanowire transistors**,
    Journal of Applied Physics, 2008, v. 103, 064501

2.  D.H. Hill, R.A. Bartynski, N.V. Nguyen, A.V. Davydov, D.C. Horowitz,
    and M.M. Frank, **The relationship between local order, long range
    order, and sub-band-gap defects in hafnium oxide and hafnium
    silicate films,** Journal of Applied Physics, 2008, v. 103, 093712

3.  G. Stan, S. Krylyuk, A.V. Davydov, M. Vaudin, L.A. Bendersky, and
    R.F. Cook, **Surface effects on the elastic modulus of Te
    nanowires**, Applied Physics Letters, 2008, v. 92, 241908

4.  A.L. Syrkin, V. Ivantsov, A. Usikov, V.A. Dmitriev, G. Chambard, P.
    Ruterana, A.V. Davydov, S.G. Sundaresan, E. Lutsenko, A.V. Mudryi,
    E.D. Readinger, G.D. Chern-Metcalfe, and M. Wraback, **InN layers
    grown by the HVPE**, Physica Status Solidi C, 2008, v. 5, 1792

5.  A. Usikov, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Syrkin, V.
    Dmitriev, A.Yu. Nikiforov, S. G. Sundaresan, S.J. Jeliazkov, and
    A.V. Davydov, **Electrical and optical properties of thick highly
    doped p-type GaN layers grown by HVPE**, Physica Status Solidi C,
    2008, v. 5, 1829

6.  A.Yu. Zavrazhnov, I.D. Zartsyn, A.V. Naumov, V.P. Zlomanov and A.V.
    Davydov, **Composition Control of Low-Volatility Solids Through
    Chemical Vapor Transport Reactions. I. Theory of Selective Chemical
    Vapor Transport,** Journal of Phase Equilibria and Diffusion,
    2007, v. 28, 510

7.  S.G. Sundaresan, A.V. Davydov, M.D. Vaudin, I. Levin, J.E. Maslar,
    Y-L. Tian, and M.V. Rao, **Growth of Silicon Carbide Nanowires by a
    Microwave Heating-Assisted Physical Vapor Transport Process Using
    Group VIII Metal Catalysts**, Chemistry of Materials, 2007, v. 19,
    5531

8.  A. Motayed, A.V. Davydov, M. He, S. N. Mohammad, and J. Melngailis,
    **365 nm operation of n-nanowire/p-gallium nitride homojunction
    light emitting diodes,** Appl. Phys. Lett., 2007, v. 90, 183120

9.  S.G. Sundaresan, M.V. Rao, Y-L. Tian, J.A. Schreifels, M.C. Wood,
    K.A. Jones, and A.V. Davydov, **Comparison of Solid-State Microwave
    Annealing with Conventional Furnace Annealing of Ion-Implanted
    SiC**, J. of Electronic Materials, 2007, v. 36, 324

10. O. Kryliouk, H.J. Park, Y.S. Won, T. Anderson, A.V. Davydov, I.
    Levin, J.H. Kim, and J.A. Freitas, **Controlled synthesis of
    single-crystalline InN nanorods**, Nanotechnology, 2007, v. 18,
    135606

11. A. Motayed, M. Vaudin, A.V. Davydov, J. Melngailis, M. He, and S. N.
    Mohammad, **Diameter dependent transport properties of gallium
    nitride nanowire field effect transistors**, Appl. Phys. Lett.,
    2007, v. 90, 043104

12. A. Motayed, M. He, A.V. Davydov, J. Melngailis, and S. N. Mohammad,
    **Simple model for dielectrophoretic alignment of gallium nitride
    nanowires**, J. Vac. Sci. Technol., 2007, v. 25B, 120

13. A. Motayed, M. He, A.V. Davydov, J. Melngailis, and S. N. Mohammad,
    **Realization of reliable GaN nanowire transistors utilizing
    dielectrophoretic alignment technique**, - J. Appl. Phys., 2006, v.
    100, 114310

14. N. Mahadik, M.V. Rao, and A.V. Davydov, **Thermally Stable Ge/Cu/Ti
    Ohmic Contacts to n-type GaN**, - J. Electronic Materials, 2006, v.
    35, 2035

15. A. Motayed, A.V. Davydov, M.D. Vaudin, I. Levin. J. Melngailis,
    and S. N. Mohammad, **Fabrication of GaN-based nanoscale device
    structures utilizing focused ion beam induced Pt deposition**, - J.
    Appl. Phys., 2006, v. 100, 024306

16. K.A. Bertness, A. Roshko, N.A. Sanford, J.M. Barker, A.V. Davydov,
    **Spontaneously grown GaN and AlGaN nanowires**, - J. Cryst. Growth,
    2006, v. 287, 522

17. K.A. Bertness, N.A. Sanford, J.M. Barker, J.B. Schlager, A. Roshko,
    A.V. Davydov, I. Levin, **Catalyst-free growth of GaN
    nanowires,-** J. of Electronic Materials, 2006, v. 35, 576

18. J.E. Van Nostrand, K.L. Averett, R. Cortez, J. Boeckl, C.E. Stutz,
    N.A. Sanford, A.V. Davydov, J.D. Albrecht, **Molecular Beam
    Epitaxial Growth of High-Quality GaN Nanocolumns**, - J. of Crystal
    Growth, 2006, v. 287, 500

19. A. Davydov, A. Motayed, W.J. Boettinger, R.S. Gates, Q. Z.
    Xue, H. C. Lee, Y. K. Yoo, **Combinatorial optimization of
    Ti/Al/Ti/Au ohmic contacts to n-GaN**, - Phys. Stat. Sol. C,
    2005, v. 2, 2551

20. M.A. Mastro, O.M. Kryliouk, T.J. Anderson, A. Davydov, A.J. Shapiro,
    **Influence of polarity on GaN thermal stability**, - J. Cryst.
    Growth, 2005, v. 274(1-2), 38

21. I. Levin, A.V. Davydov, B. Nikoobakht, and N. Sanford, **Growth
    habits and defects in ZnO nanowires grown on GaN/sapphire
    substrates,** - Appl. Phys, Letters, 2005, v. 87, 103110

22. N.A. Sanford, A. Davydov, D.V. Tsvetkov, A.V. Dmitriev, S. Keller,
    U.K. Mishra, S.P. DenBaars, S.S. Park and J.Y. Han, R.J. Molnar,
    **Measurement of Second Order Susceptibilities of GaN and
    AlGaN**, - J. Appl. Phys., 2005, v.97, 053512

23. A. Motayed, A. Davydov, W. J. Boettinger, D. Josell, A.J.
    Shapiro, I. Levin, T. Zheleva, G.L. Harris, **Realization of
    improved metallization-Ti/Al/Ti/W/Au Ohmic contacts to n-GaN for
    high-temperature application**, - Phys. Stat. Sol. C, 2005, v. 2,
    2536

24. N.A. Sanford, L.H. Robins, M.H. Gray, J.E. Van Nostrand, C.
    Stutz, R. Cortez, A. Davydov, A. Shapiro, I. Levin, and A. Roshko,
    **Fabrication and analysis of GaN nanorods grown by MBE**, - Phys.
    Stat. Sol. C, 2005, v. 2, 2357

25. N.A. Sanford, A. Munkholm, M.R. Krames, A. Shapiro, I. Levin, A.
    Davydov, S. Sayan, L.S. Wielunski, and T.E. Madey, **Refractive
    index and birefringence of InGaN films grown by MOCVD,** - Phys.
    Stat. Sol. C, 2005, v. 2, 2783

26. N. V. Nguyen, A.V. Davydov, and D. Chandler-Horowitz, **Sub-bandgap
    defect states in polycrystalline hafnium oxide and their suppression
    by admixture of silicon**, - Appl. Phys. Letters, 2005, v. 87,
    192903

27. A. Davydov, L.A. Bendersky, W.J. Boettinger, D. Josell, M.D. Vaudin,
    K.-S. Chang c and I. Takeuchi, **Combinatorial Investigation of
    Structural Quality of Au/Ni Contacts on GaN**, Appl. Surf. Science,
    2004, v. 223(1-3), 24

28. Schenck, D.L. Kaiser, A. Davydov, **High-Throughput Characterization
    of the Optical Properties of Compositionally Graded Combinatorial
    Films**, -Appl. Surf. Science, 2004, v. 223(1-3), 200

29. B. Nikoobakht, A. Davydov, and S.J. Stranick, **Controlling the
    Growth Direction of ZnO Nanowires on c-Plane Sapphire**, in:
    "Nanoparticles and Nanowire Building Blocks---Synthesis, Processing,
    Characterization and Theory", MRS Symp. Proc. 818, Warrendale, PA,
    2004, M8.25.1

30. A. Motayed, K.A. Jones, M.A. Derenge, M.C. Wood, D. N. Zakharov, Z.
    Liliental-Weber, D.J. Smith, A. Davydov, W.T. Anderson, A.A.
    Iliadis, and S. Noor Mohammad, **Electrical, Microstructural and
    Thermal Stability Characteristics of Ta/Ti/Ni/Au Contacts to
    n-GaN**, -- J. Appl. Phys., 2004, v. 95(3), 1516

31. D.B. Migas, L. Miglio, M. Rebien, W. Henrion, P. Stauss, A.G.
    Birdwell, A. Davydov, V.L. Shaposhnikov, and V.E. Borisenko,
    **Structural, electronic, and optical properties of
    β-(Fe~1-x~Co~x~)Si~2~**, - Physical Review B, 2004, v. 69, 115204

32. A. Davydov and U.R. Kattner, **Revised Thermodynamic Description of
    the Co-Mo System**, -- Journal of Phase Equilibria, 2003, v.
    24(3), p. 209

33. A. Sanford, L. H. Robins, A. Davydov, A. Shapiro, D. V.
    Tsvetkov, A. V. Dmitriev, S. Keller, U. K. Mishra, S. P. DenBaars,
    **Comparative Studies of Refractive Index for MOCVD and HVPE
    Al~x~Ga~1-x~N films Grown on Sapphire Substrates**, -- J. Appl.
    Phys., 2003, v. 94(5), 2980

34. C.J. Lu, A. Davydov, D. Josell, and L.A. Bendersky**, Interfacial
    reactions of Ti/n-GaN contacts at elevated temperature**, -- J.
    Appl. Phys., 2003, v. 94, p. 245

35. J. Unland, B. Onderka, A. Davydov, R. Schmid-Fetzer,
    **Thermodynamics and Phase Stability in the Ga-N System**, -- J.
    Cryst. Growth, 2003, v. 256, p. 33

36. V.P. Zlomanov, A.J. Zavrazhnov, A. Davydov, **Non-stoichiometry and
    P-T-x Diagrams of Binary Systems**, - Intermetallics, 2003, v.11, p.
    1287

37. A. Motayed, A. Davydov, L.A. Bendersky, M.C. Wood, M.A. Derenge,
    D.F. Wang, K.A. Jones, and S.N. Mohammad, **Novel high-transparency
    Ni/Au bilayer contacts to n-type GaN**, - J. Appl. Phys., 2002,
    v.92, p. 5218

38. A. Davydov, W.J. Boettinger, U.R. Kattner and T.J. Anderson,
    **Thermodynamic Assessment of the Gallium-Nitrogen System**, - Phys.
    Stat. Sol. A, 2001, v. 188, p. 407

39. M.A. Mastro, O.M. Kryliouk, M.D. Reed, T.J. Anderson, A. Davydov,
    A.J. Shapiro, **Thermal Stability of MOCVD and HVPE GaN Layers in
    H~2~, HCl, NH~3~ and N~2~**, - Phys. Stat. Sol. A, 2001, v. 188, p.
    467

40. V. Soukhoveev, V. Ivantsov, Yu. Melnik, A. Davydov, D. Tsvetkov, K.
    Tsvetkova, I. Nikitina, A. Zubrilov, A. Lavrentiev, V. Dmitriev,
    **Characterization of 2.5" Diameter Bulk GaN Grown from
    Melt-Solution**, - Phys. Stat. Sol. A, 2001, v. 188, p. 411

41. D. Tsvetkov, Yu. Melnik, A. Davydov, A. Shapiro, O. Kovalenkov, J.B.
    Lam, J.J. Song, V. Dmitriev, Growth of Submicron AlGaN/GaN/AlGaN
    Heterostructures by HVPE, - Phys. Stat. Sol. A, 2001, v. 188, p. 429

42. A. Davydov, U.R. Kattner, D. Josell, J.E. Blendell, R.M. Waterstrat,
    A.J. Shapiro, and W.J. Boettinger, **Determination of the CoTi
    Congruent Melting Point and Thermodynamic Re-assessment of the Co-Ti
    System**, - Metall. & Mater. Trans. A., v. 32A, 2001, p. 2175

43. M. Ahonen, B. Liu, A. Davydov, E. Ristolainen, P. Holloway,
    Interfacial Reactions Between Metals and Gallium Nitride. -- in:
    "31^st^ State-of-the-Art Program on Compound Semiconductors" Ed.
    D.N. Buckley, S.N.G. Chu, and F. Ren, ECS Proceedings, 1999, v.
    99-17, p.114

44. A. Davydov, U.R. Kattner, **Thermodynamic Assessment of the Co-Mo
    System.** -- Journal of Phase Equilibria, 1999, v. 20(1), p. 5

45. A. Davydov, T.J. Anderson, Thermodynamic Analysis of the Ga-N
    System. -- In: "III-V Nitride Materials and Processes III" Ed. T.D.
    Moustakas et al., ECS Proceedings, 1998, v. 98-18, p. 38

46. J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S.
    Lambers, A. Davydov, T.J. Anderson, S.J. Pearton, **Comparison of
    plasma chemistries for dry etching thin film electroluminescent
    display materials**. - J. Vacuum Sci. Technology A, 1998, v.
    16(4), p. 2177

47. J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S.
    Lambers, A. Davydov, T.J. Anderson, S.J. Pearton, **Electron
    cyclotron resonance plasma etching of oxides and SrS and ZnS-based
    electroluminescent materials for flat panel displays**. -- J. Vacuum
    Sci. Technology A, 1998, v. 16(3), p.1944

48. C.-H. Chang, B.J. Stanbery, A. Morrone, A. Davydov, T.J. Anderson,
    **Novel multilayer process for CuInSe~2~ thin film formation by
    rapid thermal processing**. -- In: "Thin-film structures for
    photovoltaics" (MRS, Boston, 1997). MRS Symposium Proceedings,
    1998, v. 485, p. 163

49. H. P. Maruska, R. Sudharsanan, E. Bretschneider, A. Davydov, J.E.
    Yu, B. Pathangey, K.S. Jones and T.J. Anderson, **Carrier
    confinement effects in epitaxial silicon quantum wells prepared by
    MOCVD**. -In: "Microcrystalline and nanocrystalline semiconductors"
    (MRS, Pittsburgh, 1995), MRS Symposium Proceedings, v. 358, p.987

50. E. Bretschneider, A. Davydov, C. McCreary, , Li Wang, T.J. Anderson,
    H.P. Maruska, P. Norris, I. Goepfert, T.D. Moustakas, **ZnS/Si/ZnS
    quantum well structures for visible light emission**. -In:
    "Surface/interface and stress effects in electronic material
    nanocrystals", (MRS, Pittsburgh, 1996), MRS Symposium
    Proceedings, v. 405, p.295

51. C.H. Chang, A. Davydov, B.J. Stanbery, T.J. Anderson,
    **Thermodynamic assessment of the Cu-In-Se system and application to
    thin film photovoltaics**. - 25^th^ IEEE Photovoltaic Specialist
    Conference, Washington, DC, 1996. Proceedings, p.849

52. A. Davydov, M.H. Rand and B.B. Argent, **Review of heat capacity
    data for tellurium**. -CALPHAD, 1995, v.19(3). p.375

53. A. Davydov, V.P. Zlomanov, **Optimization of the thermodynamic
    properties and phase diagram of the Ga-As system**.- Inorg.
    Materials, 1994, v.30(3), p. 309

54. B.A. Akimov, A.V. Albul, A. Davydov, V.P. Zlomanov, L.I. Ryabova,
    M.E. Tamm, **Pressure Sensor.- SU Patent No 1527524 A1 (1989)**

55. A. Davydov, M.E. Tamm, V.P. Zlomanov, **Phase equilibria in the
    thallium selenide-indium selenide system**. -- Russ. J. Inorg.
    Chem., 1988, v.33(7), p.1067

56. A. Davydov, M.E. Tamm, V.P. Zlomanov, **Solid solutions in the
    InTe-TlTe system**. -- Russ. J. Inorg. Chem.,1987, v. 32(7), p.1055

57. N.Yu. Artyushina, A. Davydov, V.P.Zlomanov, L.I. Ryabova, M.E. Tamm,
    **Modulation of the energy band relief of single crystal
    2PbTe-TlBiTe~2~ alloys**. -Sov. Phys. Semicond., 1986, v.20(2),
    p.158

58. B.A. Akimov, A.B. Albul, A. Davydov, V.P.Zlomanov, L.I. Ryabova,
    M.E. Tamm, **Transport effects and percolation conduction in the
    In~1-x~Tl~x~Te solid solutions**.-Sov. Physics - Solid State,
    1986, v. 28(9), p.1502